集射電極 的英文怎麼說
中文拼音 [jíshèdiànjí]
集射電極
英文
beam-forming electrode-
The base region is always very much narrower than the emitter or collector regions.
基極總是比發射極和集電極薄得多。As a comparison, ba1. 03ce0. 8gd0. 2o3 - was synthesized by sol - gel method. among these samples, nonstoichiometric samples were synthesized for the first time. the research work involved : the crystal phase of the sinters were determined by xrd ; ionic conduction under different experimental atmospheres was measured by gas concentration cells ; performances of hydrogen - air fuel cells with the sinters as electrolytes and porous pt as electrodes were measured
用粉末x射線衍射儀鑒定它們的結晶相；在（ 600 1000 ）范圍內，以燒結體作為電解質隔膜，多孔性pt黑為正、負電極， pt - rh合金網為集電極，分別組成氫濃差電池、氧濃差電池及氫?空氣燃料電池並測定了它們的性能，研究了不同氣氛下樣品的離子導電特性及影響燃料電池性能的因素。The density of holes in the base is less than the density of free electrons in the emitter and collector.
基極中空穴的密度小於發射極和集電極中自由電子的密度。Common - base collector emitter connection
共基極集電極發射極連接At present, feas have potential for use as an electron source in a wide variety of applications, including microwave power amplifiers ( such as twts, klystron ), flat panel displays, electron microscopy, and electron beam lithography
目前，場致發射陣列陰極的應用領域十分廣泛，主要包括微波器件（應用於twts ， klystron等） 、平板顯示器（ feds ） 、電子顯微鏡及電子束刻蝕系統等。其中，應用研究的焦點主要集中在平板顯示器和射頻功率放大器。Circuit board, integrated circuit, resistor, capacitor, chips, rectifier, led, diode, transistor, laser pick - up head and all kinds of electronics component
電路板集成電路電阻電容主晶元整流管發光管二極體三極體鐳射光頭等各類電子零件Features : low vce ( sat ), large current capacity
特點:集電極-發射極飽和壓降低，電流大。Aluminum alloy films and sputtering targets for semiconductor integrated circuit wiring and electrodes
集成電路電極布線用鋁合金薄膜及其濺射靶材For low distortion, the drains ( or collectors ) of a differential amp " s front - end should be bootstrapped to the source ( or emitter ) so that the voltages on the part are not modulated by the input signal
為了得到低失真，差分放大器前端的漏極（或集電極）應該被引導到源極（或射極） ，這樣埠電壓就不會被輸入信號調制了。With respect to a bipolar transistor, the condition in which the gate current equals or exceeds the value necessary to provide full emitter collector conduction
就雙極型晶體管而言，其門電流等於或超過必要的值，使發射極集電極充分導通的一種狀態。In this thesis two reverse - bias electrical stress methods were used to investigate the reliability of the devices. one is a typical of oc stress method with collector open and reverse - bias emitter - base junction. another one, a new technique, is fc stress method with forward - bias collector - base junction and reverse - bias emitter - base junction
本論文採用兩種反偏電應力方法考察器件的可靠性，一種為傳統的oc應力（集電極開路，發射結反向偏置）方法，另一種為新的方法fc應力（集電結正向偏置，發射結反向偏置）方法。Remember, the transistor ' s collector current is almost equal to its emitter current, as the ratio of a typical transistor is almost unity ( 1 )
不要忘了，通常典型晶體管的系數幾乎是1 ，因此晶體管集電極電流與發射極電流也幾乎是相等的。The lower resistance should select properly, too big to make radio frequency signal drive collector current too little, too small to make amplifier instable easily
下偏電阻要選取適中，過大會使射頻信號推動集電極電流的能力過小，過小容易使放大器不穩定。Meanwhile, the relatioship between al ' s width of emitter and collector current, which called " extended electrode enhancing current ", has been presented
同時，也給出了大面積鋪鋁的橫向pnp管中發射極電極鋁條寬度與集電極電流的關系，稱之為「電極擴展增強電流法」 。If we have control over the transistor ' s emitter current by setting diode current with a simple resistor adjustment, then we likewise have control over the transistor ' s collector current
我們只要簡單的調節電阻，設定二極體電流，就能控制晶體管的發射極電流，於是也就能控制晶體管集電極電流。Well, the ratio works similarly : if emitter current is held constant, collector current will remain at a stable, regulated value so long as the transistor has enough collector - to - emitter voltage drop to maintain it in its active mode
系數的作用與之類似：如果發射極電流保持恆定，只要集電極發射極電壓足以使其保持在放大區，集電極電流也將穩定保持。In the diagram, the output of the error amp is connected to the base of an npn transistor : when the error amp drives current into this transistor ' s base, it allows current to flow from collector to emitter, and that transistor in turn pulls current from the base of the pass transistor
在這個圖里，誤差放大器的輸出端連接到了一個npn三極體的基極上：當誤差放大器輸出電流到了三極體的基極上，三極體允許電流從集電極向發射極流動，這個傳輸三極體工作時就是就是從基極吸取電流的過程。Discrete semiconductor devices and integrated circuits - blank detail specification for light emitting infrared emitting diodes with without pigtail for fibre optic systems and sub - systems
分立半導體器件和集成電路.光纖系統和分系統用帶不帶引線的發光二極體紅外發射二極體的空白詳細規范The structure of field emission triode is first simulated by magic. the tip height, tip position, tip curvature, gate aperture, and gate voltage are changed, to observe the emission current and the electron congregation
本課題首先採用magic軟體對三極體結構的尖錐場發射陰極進行了模擬計算，分別改變尖錐高度，錐尖位置，尖錐曲率半徑，柵極孔徑及柵極電壓，觀察陽極收集電流及電子束的會聚情況。The combination of very large radio flux and exceedingly small angular size means that the sources have a fantastic surface brightness.
極大的射電流量同極小的角經集於一身，意味著這些發射源有難以置信的高表面亮度。分享友人