雜質電離能 的英文怎麼說

中文拼音 [zázhídiànlínéng]
雜質電離能 英文
impurity ionization energy
  • 雜 : Ⅰ形容詞（多種多樣的; 混雜的） miscellaneous; varied; sundry; mixed Ⅱ動詞（混合在一起; 攙雜） mix; blend; mingle
  • 質 : Ⅰ名詞1 （性質; 本質） nature; character; essence 2 （質量） quality 3 （物質） matter; substance;...
  • 電 : Ⅰ名詞1 （有電荷存在和電荷變化的現象） electricity 2 （電報） telegram; cable Ⅱ動詞1 （觸電） give...
  • 離 : Ⅰ動詞1 （離開） leave; part from; be away from; separate 2 （背離） go against 3 （缺少） dispens...
  • 能 : 能名詞（姓氏） a surname
  • 雜質 : [固體物理] impurity; foreign substance; impurity substance; inclusion; foreign matter
  1. In the second part, using the wave function and binding energy obtained from the first part, the photoionization cross - section of the impurity is calculated

    在第二部分，我們採用第一部分所選的變分波函數和得到的束縛能進一步計算了類氫雜質體系的光致電離截面。
  2. In this paper, the effect of interface properties of sio2 / sic on performances of n - channel sic mofet are studied systematically : incomplete ionization of impurity in sic is analyzed based on the crystal structure of sic materials. the effect of incomplete ionization of impurity on c - v characteristics of p - type 6h - sic mos is researched based on charge - sheet model for sic mos inversion layers

    本文就sio _ 2 / sic界面質量對n溝sicmosfet性能的影響做了深入的研究：從碳化硅材料的晶體結構出發分析了碳化硅材料中雜質的不完全離化，採用sicmos反型層薄層電荷數值模型，研究了雜質不完全離化對p型6h - sicmosc - v特性的影響。
  3. The electrical conductance of the gold / polymer composite films was tunable, and a low resistivity of the order of 10 ~ ( - 4 ) cm was yield. the conducting mechanism was not determined, perhaps the tunnel effect and the foreign - substance - electron - transfer should be considered

    聚合物金納米粒子復合薄膜的電阻率可調，電阻率最低可達10 ~ （ - 4 ） ? cm量級，導電機制可能與隧道效應及雜質離子導電有關。
  4. Al - doped zno thin films are emerging as an alternative potential candidate for ito flims recently. al doped zno thin films also can obtain a tunable band gap. especially, zno : al thin films with high c - axis orientated crystalline structure along ( 002 ) plane are potential device applications in broadband ultra - violet

    Al摻雜的zno薄膜不僅具有與傳統ito薄膜相比擬的光電性質，而且原材料豐富、價格低、無毒、沉積溫度低、熱穩定性高，在氫等離子體環境中具有很高的化學穩定性，不易導致太陽能電池材料活性降低。
  5. The questions the researcher concerned are which system will be chosen and how to obtain the good lithium ionic conductor materials, which is the basic departure of the paper. the addition of second phase in composite can change the interface structure and the conduction mechanism, improve the matrix conductivity and other function such as the sintering, crisping and so on, so the research of composites are an interesting field of the ionic conductors. the synthesis of lithium ionic conductor is often by solid state reaction, but this method needs high temperature and leads to the volatility of lithium which not only causes the drift of the compounds but gets the no well - distributed materials

    研究者所關注的問題是選擇新的體系進行研究，以期得到性能更好的鋰離子導體材料，這也正是本論文的基本出發點；復合離子導體中第二相的加入改善了基質的界面結構和導電機制，不僅可以提高基質材料的電導率，還可以在一定程度上改善材料的其它性能，如燒結性能、脆性和機械強度等。因此復合材料的研究是離子導體一個有廣闊前景的發展方向；合成鋰離子導體，特別是成分復雜的體系以傳統的固相合成法為主，但這種方法需要較高的溫度，容易引起鋰的揮發，從而造成產物組成的偏移，而且不易得到顯微結構均勻的材料。
  6. The present thesis is devoted to improving the excitation of the laser media ( gas mixture ) in the resonator of the high - average - power tea co2 laser by means of reinforcing the pre - ionization and eliminating the harmful impurity

    本文正是從提高預電離及清除混合氣中的雜質這兩個方面研究改善高平均功率teaco _ 2激光器腔內介質（混合氣體）的激發性能的。
  7. ( 2 ) when the impurity in the center of the well, the binding energy of the impurity is decreased as the strength of applied electric field increased

    （ 2 ）當施主離子位於勢阱中心時，雜質的束縛能隨著電場強度的增大而減小。
  8. Finally, a specific analysis is made for our results. because we have considered the correlation between the confined and non - confined direction of the wire, the binding energy is improved and correspondingly the threshold energy is enhanced, which results in the declinement of the photoionization cross - section

    最後對所得結果進行了詳細的討論，山於我們選取的波函數考慮到限制方向與非限制方向的相關性因素，從而提高了雜質的束縛能（在寬階時尤為明顯x即提高了所謂的閾能（ e ，導致了光電離截面值的減小
  9. ( 3 ) the electric field breaks the energy degeneracy for symmetrical impurity position in the well, the results show that the redshift and blueshift of the impurity stark energy shift as the impurity position. ( 4 ) under the same external electric field, the impurity stark energy shift is obviously different with the different aspect ratio of the quantum well wires

    （ 3 ）當施主離子位於勢阱中不同位置時，零電場下量子阱線中的雜質態是關于施主離子位置中心對稱的簡並態，在外加電場作用下發生能級分裂，這種簡並不再存在;雜質的stark能移由於施主離子位置的不同表現為紅移或藍移。
  10. In the present research, scanning electron microscope ( sem ), laser raman spectroscopy ( lrs ), x - ray photoelectron spectroscopy ( xrs ), x - ray diffraction ( xrd ) and electron probe micro analysis ( epma ) were utilized to investigate the difference in micro - structure and elements distribution between domestic and foreign pdcs. combined with analysis on current manufacturing process, the mechanism for the difference was discussed. scanning electron microscope ( sem ), laser granularity analysis, atom emission spectroscopy ( aes ) and plasma emission spectroscopy ( icpaes ) are also utilized to investigate the grain shape and impurities of key material - diamond power

    本課題採用掃描電鏡、拉曼光譜、光電子能譜、 x -射線衍射分析、電子探針等方法分析了國內外聚晶金剛石-硬質合金復合片在微觀組織結構、元素成分分佈方面的差異，結合對現有燒結工藝的分析，研討了造成這些差異的機理；採用掃描電子顯微鏡、激光粒度分析、原子發射光譜、等離子發射光譜等方法對關鍵原材料-金剛石微粉的晶形、雜質含量進行了比較分析測試。
  11. In this paper, based on the previous works, we study the quality of a hydrogenic impurity in gaas / gai - xalxas rectangular quantum wires in detail. using variational approach, we calculate the binding energy and the photoionization cross - section of the impurity in the system

    本文在前人工作的基礎上，詳細研究了矩形截面gaas ga _ （ 1 - x ） al _ xas （ x = 0 . 3 ）量子阱線中的類氫雜質體系的性質，採用變分技術計算了此體系的束縛能及其光致電離截面。
  12. ( 2 ) for a lens - shaped quantum dot, due to the asymmetry of the bound potential of in - plane and perpendicular to the plane, the electric ground state energies are related not only with the deviation distance but also with the deviation direction

    （ 2 ）對于透鏡型量子點，由於水平方向和垂直方向束縛勢不對稱，電子基態能不僅與雜質的偏離距離有關，還與雜質偏離方向有關。
  13. Nafion covering at the electrode surface as cation exchange resin could effectively prevent the disturb by some impurity ion as nitrite ion accordingly achieve the good selectivity of nitric oxide

    探討了nafion電極的選擇性， nafion作為陽離子交換樹脂覆蓋在鉑電極表面，能有效阻隔海水中的雜質離子如no _ 2 ~ -離子的干擾，從而達到對no的良好選擇性。
  14. It can remove water content, gas, impurity in oil as well as polar material in degraded oil, reduce acid number, medium loss number, remove free carbon and enhance withstand voltage and quality to guarantee operation of electric equipment

    可作為電力變壓器大修專用過濾設備，不但能高效去除油中的水分氣體雜質，而且能快速除去老化變質油中的極性物質，降低油液酸值，介損值，除去游離碳，提高油的耐壓強度和油的質量，確保電力設備正常運行。
  15. Ysfl series oil moisture can use for such trades as the electricity, metallurgy, chemical industry, machinery, light industry, steel, etc. at the same time from oil filter, can strain except that steam turbine oil, hydraulic oil, etc. moisture content and mechanical impurity in the oil, one degree of levels of pollution of guaranteeing the fluid, prevent the fluid from producing and going bad, emulsification

    Ysfl系列油水分離濾油機同時可用於電力冶金化工機械輕工鋼鐵等行業，能夠濾除汽輪機油液壓油等油中的水份和機械雜質，保證油液的污染度水平，防止油液產生變質，乳化。
  16. The fabrication methods such as molecular - beam epitaxy and metal - organic chemical vapor deposition and experimental studies of their properties have been reported, and theoretical studies mainly concentrate on the impurity binding energy varying the size of the wire, the effect of the applied electric field or magnetic field, and photoionization of impurities

    在實驗上已經用分子束外延和金屬有機化學汽相淀積等技術對其物理性質進行了廣泛的研究，而理論上的研究主要集中於研究量子線的尺寸對雜質束縛能的影響、外加電場或磁場的作用及雜質的光致電離效應。
  17. We have investigated the influence on the character of cdte thin films with different conditions and parameters. secondly, in normal temperature, cdte thin films are high resistance semiconductor, for improving its electricity capability, we commonly inject benefactor or acceptor impurities into the pure cdte thin films, the ion influx technique is a good method among many adulteration means. at present, the literatures on the doped cdte thin films by the ion influx technique have a fat lot reports

    本論文首先採用近距離升華法在不同基片上制備cdte薄膜，研究了不同工藝條件和參數對cdte薄膜性質的影響。其次，在常溫下，本徵cdte薄膜均為高阻半導體。為了改善其導電性能，通常向cdte薄膜中摻入施主或受主雜質，其中離子注入技術是摻雜方法之一。
  18. In this paper, based on the previous works, we studied the properties of a hydrogenic impurity in the gaas / ga1 - xalxas rectangular single quantum wire in detail. using variational approach, the binding energy and the photoionization cross section of the impurity in the system are calculated

    本文在前人工作的基礎上，研究了方形截面gaas / ga _ （ 1 - x ） al _ xas量子線中類氫雜質體系的性質，採用變分技術計算了此體系的束縛能及其光致電離截面。
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