雜質電離 的英文怎麼說

中文拼音 [zázhídiànlí]
雜質電離 英文
impurity ionization
  • 雜 : Ⅰ形容詞（多種多樣的; 混雜的） miscellaneous; varied; sundry; mixed Ⅱ動詞（混合在一起; 攙雜） mix; blend; mingle
  • 質 : Ⅰ名詞1 （性質; 本質） nature; character; essence 2 （質量） quality 3 （物質） matter; substance;...
  • 電 : Ⅰ名詞1 （有電荷存在和電荷變化的現象） electricity 2 （電報） telegram; cable Ⅱ動詞1 （觸電） give...
  • 離 : Ⅰ動詞1 （離開） leave; part from; be away from; separate 2 （背離） go against 3 （缺少） dispens...
  • 雜質 : [固體物理] impurity; foreign substance; impurity substance; inclusion; foreign matter
  1. The ionosphere is a complex medium, which is aeolotropy, asymmetry, dispersive and changes randomly with time. in order to improve the communication quality of the shortwave that depends on the ionosphere, we should have aknowledge of the current condition of the ionosphere in real time. the backscatter sounding of high frequency can diagnose the real - time channel characters for shortwave communication or hf radar, which is great assistant to shortwave communication and hf radar

    電離層是隨機時變，各向異性，非均勻、色散的復雜介質。為了保證依賴于電離層進行的短波通信質量，必須了解電離層的實時狀態信息。高頻返回散射探測可以實時監測與短波通信或高頻天波雷達相關的天波傳播通道的狀態，對短波通信和天波雷達工作起了重要的輔助作用。
  2. In the second part, using the wave function and binding energy obtained from the first part, the photoionization cross - section of the impurity is calculated

    在第二部分，我們採用第一部分所選的變分波函數和得到的束縛能進一步計算了類氫雜質體系的光致電離截面。
  3. In this paper, the effect of interface properties of sio2 / sic on performances of n - channel sic mofet are studied systematically : incomplete ionization of impurity in sic is analyzed based on the crystal structure of sic materials. the effect of incomplete ionization of impurity on c - v characteristics of p - type 6h - sic mos is researched based on charge - sheet model for sic mos inversion layers

    本文就sio _ 2 / sic界面質量對n溝sicmosfet性能的影響做了深入的研究：從碳化硅材料的晶體結構出發分析了碳化硅材料中雜質的不完全離化，採用sicmos反型層薄層電荷數值模型，研究了雜質不完全離化對p型6h - sicmosc - v特性的影響。
  4. The electrical conductance of the gold / polymer composite films was tunable, and a low resistivity of the order of 10 ~ ( - 4 ) cm was yield. the conducting mechanism was not determined, perhaps the tunnel effect and the foreign - substance - electron - transfer should be considered

    聚合物金納米粒子復合薄膜的電阻率可調，電阻率最低可達10 ~ （ - 4 ） ? cm量級，導電機制可能與隧道效應及雜質離子導電有關。
  5. Therefore, either reinforcing the pre - ionization or eliminating the harmful impurity is propitious to increasing the effective excitation of the laser media in the resonator so as to increase the output power

    因此增強預電離和消除有害雜質均有利於提高腔內激光介質的有效激發進而提高激光器輸出功率。
  6. The present thesis is devoted to improving the excitation of the laser media ( gas mixture ) in the resonator of the high - average - power tea co2 laser by means of reinforcing the pre - ionization and eliminating the harmful impurity

    本文正是從提高預電離及清除混合氣中的雜質這兩個方面研究改善高平均功率teaco _ 2激光器腔內介質（混合氣體）的激發性能的。
  7. Trace impurities analysis of hydrocortisonum by lc - apci - ms

    大氣壓化學電離飛行時間質譜分析氫化可的松中微量雜質
  8. According to the thickness of the soi film, high voltage ic based on soi material ( soi - hvic ) can be divided into thin - film and thick - film. for thin - film soi - hvic, linear drift region doping profile is adopted to satisfy a certain breakdown - voltage, but this process is too complex and its self - heating effect is obvious ; for thick - film soi - hvic, it can take advantage of cmos technology on silicon to obtain the high voltage

    Soi高壓集成電路根據頂層硅厚度可分為厚膜和薄膜兩大類。為了滿足一定的擊穿電壓，薄膜soi高壓電路一般採用漂移區線性摻雜技術，但其工藝復雜，且自熱效應嚴重;而厚膜soi高壓集成電路可以通過移植體硅cmos技術來實現高壓，但是由於其硅膜較厚，介質隔離成為厚膜soi高壓集成電路的關鍵技術。
  9. ( 2 ) when the impurity in the center of the well, the binding energy of the impurity is decreased as the strength of applied electric field increased

    （ 2 ）當施主離子位於勢阱中心時，雜質的束縛能隨著電場強度的增大而減小。
  10. Methods of test for determination of ionic impurities in electrical insulating materials by extraction with liquids

    用液體萃取法測定電絕緣材料中離子雜質的試驗方法
  11. Methods of test for the determination of ionic impurities in electrical insulating materials by extraction with liquids

    測定電氣絕緣材料中離子雜質的液體萃取試驗方法
  12. Methods of testing insulating materials. methods of test for the determination of ionic impurities in electrical insulating materials by extraction with liquids

    絕緣材料的測試方法.用液體萃取法測定電絕緣材料中離子雜質的試驗方法
  13. This is because the origin of the virial theorem value of 2 lies in the inverse square coulomb force being the only interaction seen by the electron and impurity ion

    其原因是在理想的一維、二維、三維結構中，對于雜質體系只存在電子和施主離子間的平方反比庫侖力，而沒有量子阱寬的限制。
  14. Abstract : this paper reports the observation and analysis results on three kinds of impurity in - al2o3 by using epma - eds. we studied the differences of electric conductivity between the area containing inmpurity and the normal area by ion transport method. the effects of impurity in - al2o3 on cycle life of the na - s cell were also discussed

    文摘:用epma - eds組合儀，對氧化鋁中的三種典型雜質進行了形貌觀察和成分分析，並用電子束誘導離子遷移法，研究了雜質區及正常區的離子電導差異，討論了不同雜質的特點及對氧化鋁作用中的危害。
  15. Simultaneous determination of 14 rare earth impurities in high - purity lanthanum oxide by the axial - view whole spectra direct - reading icp - aes

    端視式全譜直讀電感耦合等離子體發射光譜法測定高純氧化鑭中稀土雜質
  16. Swivel - arm crushers are mainly used in large - scale power plants for processing of lignite in the first crushing stage, as well as for separation of foreign particles

    旋轉破碎機旋轉破碎機旋轉破碎機在大型發電廠被用來粗碎褐煤以及分離出它的雜質。
  17. Chemical analysis methods for non - rare earth impurities of rare earth metals and their oxides - determination of molybdenum and tungsten content - inductively coupled plasma atomic emission spectrographic method and inductively coupled plasma mass spectrum method

    稀土金屬及其氧化物中非稀土雜質化學分析方法鉬鎢量的測定電感耦合等離子體發射光譜法和電感耦合等離子體質譜法
  18. Finally, a specific analysis is made for our results. because we have considered the correlation between the confined and non - confined direction of the wire, the binding energy is improved and correspondingly the threshold energy is enhanced, which results in the declinement of the photoionization cross - section

    最後對所得結果進行了詳細的討論，山於我們選取的波函數考慮到限制方向與非限制方向的相關性因素，從而提高了雜質的束縛能（在寬階時尤為明顯x即提高了所謂的閾能（ e ，導致了光電離截面值的減小
  19. ( 2 ) for a lens - shaped quantum dot, due to the asymmetry of the bound potential of in - plane and perpendicular to the plane, the electric ground state energies are related not only with the deviation distance but also with the deviation direction

    （ 2 ）對于透鏡型量子點，由於水平方向和垂直方向束縛勢不對稱，電子基態能不僅與雜質的偏離距離有關，還與雜質偏離方向有關。
  20. Study on the performance test of superconducting strand nb3 sn

    型雜質電離常溫和低溫特性
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