離子氮化 的英文怎麼說
中文拼音 [lízidànhuà]
離子氮化
英文
glow discharge nitriding-
Synthesis and anion recognition properties of two novel tetraamide calix 4 crowns for optical anion sensor
氮雜冠醚的合成及對陰離子的光化學傳感性質研究Nitridation of large silicon surfaces at low temperatures by electron cyclotron resonance plasma
等離子體對硅表面的低溫大面積氮化Hydrogenated amorphous silicon nitride ( a - sinx : h ) films have been deposited by helicon wave plasma enhanced chemical vapor deposition ( hwp - cvd ), the effect of sih4 / n2 rate on the properties of the samples is systematically studied, and the critical experiment condition is obtained under which a - sinx : h films with different compositions are deposited
本工作採用螺旋波等離子體化學氣相沉積( hwp - cvd )方法制備了氫化非晶氮化硅( a - sin _ x : h )薄膜,系統地研究了不同反應氣體配比對薄膜特性的影響,得到了沉積不同組分a - sin _ x : h的典型實驗條件。Ni ion beam enhanced deposition of nitride film
鎳離子束動態增強沉積多元氮化物膜It uses a combination of a photosensitizing agent silicon - pathalocyanine, pc4 and strong visible light. first of all, the photosensitive pc4 is loaded into the cancer cells. when the pc4 is exposed to bright light, it increases the production of no and other oxidative species such as oh and o2 inside the cells, which leads to cell apoptosis disintegration and even cell death
首先,將光敏感性的pc4注入病人身體內,由於pc4染劑非常容易和不健康的細胞結合,這些不健康的細胞例如癌癥細胞在結合pc4活化性染劑后且又曝露在亮光下時,細胞內一氧化氮no及其它氧化物如氫氧離子oh -或過氧離子o2 -在細胞內的產生量會增加,因而導至此不健康的細胞萎縮,甚至死亡2 。Plasma nitriding of h13 steel aluminum die - casting dies
13鋼鋁合金壓鑄模的離子氮化Pulse glow ion nitrogen furnace
脈沖式輝光離子氮化爐Dc glow ion nitrogen furnace
直流式輝光離子氮化爐Of the currently available coolers for electronic products with a high heat flux, micro - jets impingement cooling heat sinks are able to provide the best heat transfer performance : lowering the maxmal temperature and the temperature difference. the heat transfer for multiple jets impingement has been studied firstly for summarizing a few rules. and then a copper micro - jets impingement cooling heat sink consisting of five copper sheets is designed in this paper and the jet diameter is 0. 15mm
本文首先對陣列射流沖擊進行了實驗研究,總結了陣列射流沖擊的一些規律和特性,在此基礎上,根據數值模擬優化結果設計和製作了微射流陣列冷卻熱沉(射流孔直徑d = 0 . 15mm ) ,並採用去離子水和氮氣作為工質,對熱沉內流體壓降和傳熱特性進行了研究。Heat treatment equipment ion nitrogen oven
熱處理設備:離子轟氮化爐Reformation of ld3 - 200 1000 type glow ion nitriding furnace
1000型輝光離子氮化爐的改造Furthermore, the growth and the study of self - organized quantum dots structures become more and more important recently, and the application of self - organization technique become wider and wider in this thesis, we address the theory of film growth and the growth technique firstly more, the ways and characteristics of surface detection are prescribed we mainly report the growth process, results and discuss of self - organized quantum dots structures in the a12o3 substrates by s - k mode using ecr - mocvd, in the espd - u device the growth art of ain epilayer which is the preliminary foundation of self - organized gan / ain quantum dots structures, including the substrate cleaning, nitridation, the growth of buffer and the growth of gan and ain epilayer, is discussed we deliberately compare the test result of rheed xrd and afm and achieved the optimalized condition of ain at last we have successfully realized the growth of ain which is much smooth and better crystal quality moreover, we grow the self - organized gan / ain quantum dots structure in s - k mode because the limits of the heater temperature, we can not grow the atom - smooth epilayer of ain until now so we could not grow better quantum dots which have small diameter and big density but the self - organized quantum dots structures with better quality will be realized successfully if the substrate temperature is increased the thesis study belong to my tutor subject of national nature science foundation ( 69976008 )
本論文主要論述了在espd - u裝置上,採用電子迴旋共振等離子體增強mocvd ( ecr - pamocvd )方法,在藍寶石襯底上通過s - k模式自組裝生長gan aln量子點結構的生長工藝、結果及討論。而重點分析了自組裝生長量子點之前的aln外延層生長工藝,包括襯底清洗、氮化、緩沖層的生長和gan 、 aln外延層的生長;通過高能電子衍射、 x射線衍射和原子力顯微鏡測試,並且對這些測試結果進行了詳細的比較研究,得出了較優化的工藝條件,生長出了晶質較好、表面較平整的aln外延層;進而採用s - k模式自組裝生長了gan aln量子點結構。由於實驗裝置加熱爐溫度的限制,我們沒有能夠生長出原子級平滑的aln外延層表面,因而沒能夠生長出密度比較大和直徑比較小的量子點。Sinx thin film can improve the minor carrier lifetime of both mono and poly silicon by the simultaneous surface and bulk passivation
9 )的提高;先沉積氮化硅薄膜再氫等離子體處理能得到更好的鈍化效果。However, the refractive index will increase with the increase of the flow ratio of sifu / nhs, slightly increase with the increase of substrate temperate, and decrease with the increase of rf power. by measuring the passivation results of hydrogen plasma and sinx thin film, we found an evident improvement of minor carrier lifetime in polycrystalline silicon after hydrogen plasma treatment, although it has little to do with the annealing temperature and time. the hydrogen contained in sinx thin film can enhance the carrier mobility of monocrystalline silicon, but after annealing at high temperature the mobility turns down
通過測試氫等離子體鈍化和氮化硅薄膜鈍化的效果,實驗還發現氫等離子體處理對多晶硅材料的少子壽命提高作用比較明顯,但是這種提高作用與處理溫度以浙江大學碩士學位論文王曉泉2003年5月及時間的關系不大;氨化硅薄膜中的氫對單晶硅的載流子遷移率提高有一定作用,但經過高溫處理后這種作用消失;氮化硅薄膜能提高單晶硅和多晶硅的少子壽命,具有表面鈍化和體鈍化的雙重作用;氫等離子體和氮化硅薄膜都能有效地提高單晶和多晶電池的短路電流密度,進而使電池效率有不同程度(絕對轉換效率0Removal of basic nitrogen compounds from distilled diesel using room - temperature ionic liquid
室溫離子液體脫除直餾柴油中堿性氮化物Ion nitriding furnace 1200 1600
離子氮化爐The amorphous surface layer of tantalum was obtained by anodic oxidation in melting nitrate after plasma - nitriding at relative low temperature, and the composition, phase structure and property of coating were tested
摘要採用低溫離子滲氮后再熔鹽陽極化的方法,在鉭表面形成厚度達微米數量級的非晶態層,測試了非晶層的成分、相結構和性能。The thesis focuses on the manufacture practice and the characteristic of ionic nitriding. the emphasis is placed on the research of plasma nitriding principle, nitriding technics and operation, test on the microstructure and performance of the nitrification layer
該課題著力于生產實踐,圍繞離子氮化技術特點,注重理論聯系實踐,介紹了等離子滲氮原理、滲氮工藝和操作、離子滲氮層組織性能的檢測。The research field of this thesis belongs to heat treatment in metal materials. ionic nitriding is a universal applied technique, which involves lots of marginal subjects such as discharge physics, vacuum, chemistry, electronics and materials science
該課題屬于金屬材料熱處理領域,離子氮化是一門綜合性的應用技術,涉及到了放電物理、真空、化學、電子學、材料科學等多門邊緣學科。The company deals with the heat treatment processing of various specification, type and kind of ferrous nonferrous metal, including anneal, quenching, hardening tempering, carburizing, solid solution, aging, vacuum heat treatment, high frequency treatment, blueing, nitriding and ion nitriding etc, the annual capacity of which is more than 18, 000t
我公司可以承攬各種規格型號品種的黑色金屬有色金屬熱處理加工業務,包括:退火正火回火淬火調質滲碳固溶時效真空熱處理高頻處理發藍氮化離子氮化等。年加工能力22000餘噸,年加工產量出口佔70 % 。分享友人