離子注入結 的英文怎麼說

中文拼音 [lízizhùrùjiē]
離子注入結 英文
ion implanted junction
  • 離 : Ⅰ動詞1 （離開） leave; part from; be away from; separate 2 （背離） go against 3 （缺少） dispens...
  • 子 : 子Ⅰ名詞1 （兒子） son 2 （人的通稱） person 3 （古代特指有學問的男人） ancient title of respect f...
  • 注 : Ⅰ動詞1 （灌入） pour; irrigate 2 （集中） concentrate on; fix on; focus on 3 （用文字來解釋字句）...
  • 入 : Ⅰ動詞1 （進來或進去） enter 2 （參加） join; be admitted into; become a member of 3 （合乎） conf...
  • 結 : 結動詞（長出果實或種子） bear （fruit）; form （seed）
  • 離子 : [物理學] ion
  • 注入 : pour into; empty into; inpouring; injection; infusion [拉丁語]; infunde [法國]; abouchement; influxion
  1. Here the conductance, carrier concentration and hall mobility ect parameters of er doped cdte films have been given. using seto model, we calculate the grain - boundary barrier of er doped cdte films and analyze the varing dose influence on the grain - boundary resistance

    討論了不同er離子注入量對硅基底上沉積的cdte薄膜結構和光電性能的影響，並具體給出了摻雜cdte多晶薄膜的電導、載流子濃度及遷移率等參數值。
  2. Again, because the ion influx technique have a little damnification on the skin - deep structure for the cdte thin films, among the experiment, we have let the doped cdte thin films be annealed a hour with n2 atmosphere at 500, and then slowly cooled until the room temperature. via the test and analyse, heat treatment has very important effect on the comeback of crystallattice surface disfigurements. finally, the films were characterized by x - ray diffraction ( xrd ), scanning electron microscopy ( sem ), ultraviolet visible ( uv ) and the hall effect measurement

    再次，由於離子注入會對薄膜表面的結構造成損傷，本實驗把被注入離子的cdte薄膜在n2氣氛中500下退火1個小時，然後緩慢冷卻至室溫。經測試分析，熱處理對晶格表面缺陷的恢復有很重要的作用。最後，利用xrd 、 sem 、紫外可見分光光度計及hall測試系統研究其結構，表面形貌和光電性能。
  3. In this research, we obtained the results as follows : firstly, the germination vigor of m0, m, and m2 seeds irradiated by the different doses of low - energy n * were compared and analyzed in our experiments. the results showed that the germination and seedling formation rates of the treated seeds and their offspring seeds were lower than that of the control and the rates decreased with the implantation dose intensification. furthermore, the germination and seedling formation rates of the seeds treated with the dose of sox 1015n7cm2 were only 7

    通過本文的研究，主要取得了如下的結果：首先，對不同劑量的低能n ~ +處理的擬南芥的m _ 0代、 m _ 1代和m _ 2代種子的萌發力進行了比較和分析，發現經不同劑量的低能離子處理的擬南芥的當代和後代的種子的發芽率和成苗率都比對照有不同程度的降低，降低關系與劑量成正相關，其中80次劑量處理的當代種子的發芽率和成苗率僅為對照的7 . 81和58 . 82 ，這表明低能離子注入可以引起種子的萌發力的下降。
  4. The soi is of crystal quality and the box is uniform in thickness, with the interfaces of si / sioa / si smooth and sharp. we have systematically studied the dependence of the formed soi structure on the process parameters, such as ion energy, implantation dosage, substrate temperature, as well as the annealing temperature. with xtem, sims, srp, rbs, ir, raman, aes, xps and other characterization tools, it was found that a dose window at fixed energy for water plasma ion implantation to form high quality soi structure similar to the conventional simox process exists

    本論文還系統地研究了不同注入劑量、注入能量、注入時基底溫度以及退火溫度對所形成soi結構性能的影響，藉助xtem 、 sims 、 srp 、 rbs 、 ie 、 raman 、 aes 、 xps等測試分析手段，我們發現，與傳統注氧隔離（ simox ）技術類似，存在著「劑量窗口」形成優質的soi材料，但在水等離子體離子注入方式中soi材料結構質量對劑量變化更為敏感，隨著注入劑量的增大， soi材料的埋層厚度增大而表層硅厚度減小。
  5. Structure and atom distribution of multi - charged cr ion implanted polymers

    離子注入聚合物的微觀結構和離子濃度分佈
  6. According to the results of ramman and xrd spectrum, the structural and ramman characteristics of 5 1014cm - 2 dy ions implanted cdte films deposited on ceramic substrate have been studied, and the function of the thermal annealing have been discussed

    採用顯微喇曼譜結合xrd ，研究了5 1014cm - 2dy離子注入陶瓷基底上沉積的cdte薄膜的結構和喇曼特性，並討論了離子注入后的退火效應。
  7. The aim of the thesis was that the pure cdte thin films were adulterated by the influx technique with different metals, and then we have investigated its configuration and photoelectricity after the anneal treatment

    目前，用離子注入的方法在cdte薄膜中摻雜的文獻報道的很少。本工作目的就是採用離子束注入的方法對純cdte薄膜進行不同金屬元素的摻雜及熱處理，研究其結構和光電特性。
  8. By using arabidopsis thaliana as material, the study had been focused on the ion beam implantation - induced effects and the changes of the configuration. with the rapd method and the analysis of the pod, the mechanism in molecular biology and physiology were stated

    以擬南芥為對象做離子注入的物理誘變，觀測記載了離子束注入后供試材料的形態性狀變化，利用rapd方法探討了引起形態性狀誘變的分子機理，結合同工酶分析結果，分析了離子束輻照引起的生理誘變效應。
  9. Aimed at the helium damages in plutonium caused by a decay, he + ions were implanted in aluminum and the behaviors of helium in aluminum were investigated both theoretically and experimentally to simulate those effects in plutonium. at the same time, the diffusion of helium - 3 produced by tritium decay in stainless steels, which were served as the structural materials in tritium and fusion technologies, was also investigated in this thesis

    針對放射性元素鈈的衰變引起的氦損傷問題，選擇模擬材料鋁進行了he的離子注入和其中氦行為的理論和實驗研究，同時，也研究了氚工藝及聚變堆技術結構材料不銹鋼中氚衰變~ 3he的擴散行為，從而對兩種金屬中he的行為有了較深入的認識。
  10. Sige simox : oxygen ions with high dose were implanted into sige grown directly on silicon substrate for the first time, and sige - oi novel structure was formed successfully with additional high temperature annealing ; it has been confirmed that oxygen implantation with 45kev, 3 1017cm - 2 and annealing at 12500c in ar + 5 % o2 for 5 hours, are fit for the formation of sige - oi structure ; ge loss during the high temperature annealing has been observed, which is originated from ge volatility and ge diffusion ; it has been proposed to use nanoporous layer induced by h + / he + implantation to surppress ge diffusion and to use surface oxidation to overcome the upper limit of sige simox. sige smart - cut : hydrogen ions were implanted into sige material and followed by high temperature process ( 4000c to 7000c ) ; blistering study was done and suggested the possibility of sige layer transfer by smart - cut technology ; it is concluded that the bubble formation is easier in sige than in si, and the strain in sige / si and the difference of binding energy in sige and in si could possibly contribute to this effect. behavior of sige / si implanted with hydrogen : gave a detailed study on sige implanted by beamline or phi hydrogen implantation ; it has been found that great strain is introduced into sige by hydrogen implantation and this strain could be alleviated by high temperature annealing ; both for conditional beamline implantation and piii hydrogen implantation, 600 is appropriate for the post - implantation treatment

    Sige - simox工藝方面：首次採用硅（ 100 ）襯底上直接外延的100nm厚sige的樣品中注入高劑量的o離子，通過退火處理成功制備了sige - oi新結構，即sige - simox工藝，證實了以45kev注入3 10 ~ （ 17 ） 7cm ~ （ - 2 ）劑量的氧離子，隨后在氧化層的保護下經1250 ， ar + 5 o _ 2氣氛的高溫退火（ 5小時）過程，可以制備出sige - oi新型材料；實驗中觀察到退火過程中的ge損失現象，分析了其原因是ge揮發（ ge通過表面氧化層以geo揮發性物質的形式進入退火氣氛）和ge擴散（ ge穿過離子注入形成的氧化埋層而進入si襯底中） ，其中ge擴散是主要原因；根據實驗結果及實驗中出現的問題，對下一步工作提出兩個改進的方案：一是通過在si襯底中注入適量h ~ + / he ~ +形成納米孔層來阻斷ge擴散通路，二是可以通過控製表面氧化來調節安止額士淤丈撈要表面sige層中的ge組分，從而部分解決sige
  11. In the present work, water plasma ion implantation, instead of the conventional oxygen plasma ion implantation, has been employed to fabricate soi materials. the masses of the three dominant ion species in the water vapor plasma, h2o +, ho +, and o +, are very close to each other, which overcome the problem of co - existence of o and 02 in oxygen plasma source. the oxygen depth profiles in the water plasma ion as - implanted silicon do not disperse much, which makes it possible for the formation of single buried oxide ( box ) layer by choosing appropriate implantation energy and dose

    本論文創造性地採用水等離子體離子注入方式代替傳統的氧離子注入方式來制備soi結構材料，由於水等離子體中的三種離子h _ 2o ~ + 、 ho ~ +和o ~ +質量數相差很小，克服了氧等離子體中因o _ 2 ~ +和o ~ +質量數相差大而引起的氧在硅中的分佈彌散，使注入硅后的氧射程分佈相對集中，比較容易退火后形成soi結構材料。
  12. The authors present the review on dry sliding friction and wear behaviour of particle reinforced aluminum matrix composites in recent years, including friction behaviours, wear mechanisms and applications of these composites

    離子注入是一種新興的束流表面強化技術，離子注入陶瓷材料可使其表面的力學性能如斷裂韌度、硬度、彎曲強度、摩擦學性能等得到改善，它為解決結構陶瓷韌性不足、摩擦磨損率較高等問題開辟了新的技術途徑。
  13. With this technique you can inject the ion onto the surface of the material and cause the change of the constituent and structure to better the abrasion resistance, lubrication, corrosion resistance and wear resistance

    離子注入材料表面改性技術是將載能離子注入到材料表面，引起表面成分和結構變化，以改善材料耐磨潤滑抗腐蝕抗疲勞等特性。
  14. The results were summarized as follows : ( 1 ) diamond - like carbon films could be fabricated by plasma source ion implantation ; it was found that different parameters such as the negative voltage, frequency, gas flux influenced sp3 bond ratio of dlcs, the paper described the effect in details and showed that diamond - like carbon films with increasing negative voltage, reducing frequency, appropriate gas flux got high proportion of sp3 bond ; dlcs prepared by psii contained a good deal of sic, the composition affected its properties ( such as the films hardness ) ; psii method could offer good adhesion to dlcs, but it caused the surface morphology to become asperity

    研究結果表明： （ 1 ）用全方位離子注入技術能夠制備出類金剛石膜。在全方位離子注入技術中，不同的偏壓、頻率、氣體流量都對薄膜中sp ~ 3鍵比例有所影響，文中對具體的影響進行了分析，發現偏壓增加、頻率降低和適中的氣體流量可以制備出含sp ~ 3鍵較多的類金剛石膜；同時發現用全方位離子注入技術制備的類金剛石膜含有大量的sic成份，這對薄膜的性能（例如硬度）影響很大；用全方位離子注入制備的薄膜其結合力得到增強，但薄膜的表面形貌差。
  15. The c - bn thin films were deposited on si substrates using the conventional radio - frequency ( rf ) sputtering system. the c - bn / si thin film heterojunctions have been fabricated with doping into n - type ( p - type ) semiconductor by implanting s ( be ) ions into them. i - v curves of bn / si heterojunctions were obtained by the high resistance meter, c - v curves of bn / si heterojunctions were obtained by the c - v meter

    使用rf射頻濺射系統，在si襯底上沉積氮化硼薄膜，用離子注入的方法在制備好的bn薄膜中分別注入s和be ，成功的制備了bn / sin - p和bn / sip - p薄膜異質結，用高阻儀測得bn薄膜表面電阻率和bn / si薄膜異質結的i - v曲線，用c - v儀測得bn / si薄膜異質結的c - v曲線。
  16. ( 3 ) dlc films were prepared by combining psii method with pecvd method, the films got not only smooth surface morphology but also strong adhesion, in such a fashion that it was the best method

    （ 3 ）通過全方位離子注入和等離子體增強化學氣相沉積相結合，發現制備出的類金剛石薄膜既改善了表面形貌又增強了結合力，因此證明了這是一種較好的制備方法。
  17. This paper has discussed preparing diamond - like carbon films by means of micro - wave ecr plasma source ion implantation and plasma enhanced chemical vapour deposition. we use the raman spectrum, ft - ir, afm and so on to study the dlc film. the result indicates : different bias voltage, frequency and gas flow rate of psii will have impact on sp3 proportion of dlc films, we find high bias voltage, low frequency and moderate gas flow rate can prepare high sp3 proportion dlc films ; we simply illustrate the influence of bias voltage on sp3 proportion of dlc films in pecvd

    研究結果表明：在全方位離子注入技術中，不同的偏壓、頻率、氣體流量都對薄膜中sp ~ 3鍵比例有所影響，文中對具體的影響進行了分析，發現偏壓的增加、頻率的降低和適中的氣體流量可以制備出sp ~ 3鍵比例高的類金剛石膜；在等離子增強化學氣相沉積技術中，對偏壓對sp ~ 3鍵比例的影響也進行了簡單分析。
  18. Polycrystalline diamond films were deposited on n - type si substrates. in order to achieve a better distribution of the implanted element, boron ions were implanted by two steps. the i - v curves were studied, the p - n junction effect is very evident

    在n型引襯底上沉積一層連續的金剛石膜，通過二次離子注入的方法使b離子比較均勻的分佈在金剛石膜中，通過測量i - v曲線，可以明顯的看出p - n結效應的存在。
  19. In this paper, we implanted mn + ion of different dose into undoped semi - insulating ( 100 ) gaas substrate then performed rapid thermal annealing in different temperature and time. studied the different annealing condition dependence of the samples " structure, electrical and magnetic properties and the relation of the mn + forms and these properties

    本課題採用離子注入的方法將不同劑量的mn ~ +注入到非摻雜半絕緣（ 100 ） gaas單晶襯底中，然後進行不同溫度和時間的快速熱退火處理，研究了不同的退火條件對樣品注入層的晶體結構、電特性和磁特性的影響以及mn ~ +在樣品中的存在狀態與這些性質之間的關系。
  20. At the same time the problems existed in this research field and the future research directions were pointed out

    本文詳述了國內外離子注入結構陶瓷表面改性的研究現狀，並對其改性機理進行了初步探討。
分享友人
分享到 Line

分享到臉書