離子注入 的英文怎麼說

中文拼音 [lízizhùrù]
離子注入 英文
implantation, ion
  • 離 : Ⅰ動詞1 （離開） leave; part from; be away from; separate 2 （背離） go against 3 （缺少） dispens...
  • 子 : 子Ⅰ名詞1 （兒子） son 2 （人的通稱） person 3 （古代特指有學問的男人） ancient title of respect f...
  • 注 : Ⅰ動詞1 （灌入） pour; irrigate 2 （集中） concentrate on; fix on; focus on 3 （用文字來解釋字句）...
  • 入 : Ⅰ動詞1 （進來或進去） enter 2 （參加） join; be admitted into; become a member of 3 （合乎） conf...
  • 離子 : [物理學] ion
  • 注入 : pour into; empty into; inpouring; injection; infusion [拉丁語]; infunde [法國]; abouchement; influxion
  1. In the experimental studies on the behaviors of helium in aluminum, ion implantation technique was adopted to introduce helium with different energies, doses and distributions into some specimen of monocrystal, polycrystal, and preferred orientation as to the structure of aluminum. the energies varied in the range of 50ev to 4. 87mev. the corresponding helium peak depths by trim simulation varied in the range of 16 angstrom to 20. 7 microns

    在金屬鋁中氦行為的實驗研究中，首先用離子注入技術在單晶、多晶以及擇優取向的鋁樣品中引入不同能量、劑量和濃度分佈的he原子，能量范圍從50ev 4 . 87mev ， trim模擬的he濃度峰值的深度范圍為16 （
  2. Variation of hmw - cs and gliadin induced by low energy n implantation in common wheat seeds

    離子注入誘導小麥種子高分子量谷蛋白亞基和醇溶蛋白的變異
  3. Generic specification for ion implantation equipment

    離子注入機通用技術條件
  4. Mutagenic effects of ion implantation on stevia

    離子注入甜菊的誘變效應研究
  5. Study of nd silicides synthesis by mevva source ion implantation

    源離子注入合成釹硅化物的研究
  6. Plasma immersion ion implantation into insulating materials

    等離子體浸沒離子注入絕緣材料的研究
  7. High flux metal ion implantation

    硅離子注入聚合物摩擦特性研究
  8. Modification of polyaniline thin films by low energy ion implantation

    低能離子注入對聚苯胺薄膜的改性研究
  9. Application research for prolonging life of aero - bearing with ion implantation

    離子注入航空軸承延壽應用研究
  10. Microanalyses of n implanted tungsten

    氮離子注入鎢的微觀分析
  11. Fabrication of ohmic contacts to 4h - sic created by ion - implantation

    離子注入層的歐姆接觸的制備
  12. The distribution fractions of mutants with higher avermectin titer than the original had correlation with implantation dose. after ion implantation mutation there were many types of morphology of colony, we stdudied the relationship between the colony shape and the ability of yielding, found that gray and protuberant colony had the highest titer

    離子注入后阿維鏈黴菌的菌落形態發生了很大的變化，其中灰色，邊緣整齊，中間突出有開裂的菌落和為灰色，邊緣波浪狀，中間突出有放射狀開裂的菌株產量較高。
  13. Streptomyces spectabilis 1043 which produces spectinomycin is implanted by n ( superscript + ) ion beam

    摘要利用離子注入選育高產壯觀鏈黴菌。
  14. For the first time, an integrated hall switch based on gaas mesfet process was fabricated

    論文首次採用gaas直接離子注入mesfet集成電路工藝，研製出了gaas霍爾開關集成電路。
  15. The effect of ni + ion on luminescence had not been detected by fluorescence experiments for implanted doped crystals. 5 ) the xe ion peak concentration lies at a depth of about 47nm under the surface. after ion implantations, the two peaks in o1s spectrum merge into a single one

    （ 5 ）注入的xe ~ +在距表面47nm處濃度取得最大值，離子注入使兩種類型氧格點的化學環境變得相似， o _ （ 1s ）譜的兩個峰融合為一個峰。
  16. The effects of various mutagenic agents on the productivity of avermectin by slreplomyces avermilitis were evaluated in this work. three different mutagenic breeding methods were developed, such as ntg, uv, ion implatation

    在育種研究中應用了離子注入、亞硝基胍和紫外線誘變方法，並對這幾種誘變方法進行了比較，發現離子注入的誘變效果最好。
  17. In this investigation, gas barrier property of pet has been improved by plasma enhanced chemical vapor deposition ( pecvd ) and plasma immersion ion implantation ( piii ) technologies

    本文通過等離子體化學氣相沉積（ pecvd ）和等離體浸沒離子注入（ piii ）技術在聚酯材料表面制備了阻隔碳膜來提高氣體阻隔性能。
  18. Here the conductance, carrier concentration and hall mobility ect parameters of er doped cdte films have been given. using seto model, we calculate the grain - boundary barrier of er doped cdte films and analyze the varing dose influence on the grain - boundary resistance

    討論了不同er離子注入量對硅基底上沉積的cdte薄膜結構和光電性能的影響，並具體給出了摻雜cdte多晶薄膜的電導、載流子濃度及遷移率等參數值。
  19. Again, because the ion influx technique have a little damnification on the skin - deep structure for the cdte thin films, among the experiment, we have let the doped cdte thin films be annealed a hour with n2 atmosphere at 500, and then slowly cooled until the room temperature. via the test and analyse, heat treatment has very important effect on the comeback of crystallattice surface disfigurements. finally, the films were characterized by x - ray diffraction ( xrd ), scanning electron microscopy ( sem ), ultraviolet visible ( uv ) and the hall effect measurement

    再次，由於離子注入會對薄膜表面的結構造成損傷，本實驗把被注入離子的cdte薄膜在n2氣氛中500下退火1個小時，然後緩慢冷卻至室溫。經測試分析，熱處理對晶格表面缺陷的恢復有很重要的作用。最後，利用xrd 、 sem 、紫外可見分光光度計及hall測試系統研究其結構，表面形貌和光電性能。
  20. 81 % and 58. 82 % in those of the control plants respectively. all showed that low - energy ions cause the seed germination vigor to decrease

    由此可見，低能離子注入不僅可以引起擬南芥苗的生長狀態和表型的變異，而且部分變異是可以穩定遺傳的。
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