離子注入層 的英文怎麼說

中文拼音 [lízizhùrùcéng]
離子注入層 英文
ion implanted layer
  • 離 : Ⅰ動詞1 （離開） leave; part from; be away from; separate 2 （背離） go against 3 （缺少） dispens...
  • 子 : 子Ⅰ名詞1 （兒子） son 2 （人的通稱） person 3 （古代特指有學問的男人） ancient title of respect f...
  • 注 : Ⅰ動詞1 （灌入） pour; irrigate 2 （集中） concentrate on; fix on; focus on 3 （用文字來解釋字句）...
  • 入 : Ⅰ動詞1 （進來或進去） enter 2 （參加） join; be admitted into; become a member of 3 （合乎） conf...
  • 層 : i 量詞1 （用於重疊、積累的東西 如樓層、階層、地層） storey; tier; stratum 2 （用於可以分項分步的...
  • 離子 : [物理學] ion
  • 注入 : pour into; empty into; inpouring; injection; infusion [拉丁語]; infunde [法國]; abouchement; influxion
  1. ( 5 ) glassy oxide film of samples processed by mevva al / piid si covered the surface of sic coating thickly and uniformly, and left few holes as a result of a good ability of sealing, which made weight loss of sic - c / sic smaller in air at1300

    （ 5 ） mevva源注入al再piid （等離子源全方位沉積） si塗層，玻璃氧化層厚而均勻，愈合性能好，孔洞少，對塗層缺陷有最佳的改性效果。復合材料在1300空氣中的氧化失重顯著降低，甚至出現增重。
  2. Fabrication of ohmic contacts to 4h - sic created by ion - implantation

    離子注入層的歐姆接觸的制備
  3. The soi is of crystal quality and the box is uniform in thickness, with the interfaces of si / sioa / si smooth and sharp. we have systematically studied the dependence of the formed soi structure on the process parameters, such as ion energy, implantation dosage, substrate temperature, as well as the annealing temperature. with xtem, sims, srp, rbs, ir, raman, aes, xps and other characterization tools, it was found that a dose window at fixed energy for water plasma ion implantation to form high quality soi structure similar to the conventional simox process exists

    本論文還系統地研究了不同注入劑量、注入能量、注入時基底溫度以及退火溫度對所形成soi結構性能的影響，藉助xtem 、 sims 、 srp 、 rbs 、 ie 、 raman 、 aes 、 xps等測試分析手段，我們發現，與傳統注氧隔離（ simox ）技術類似，存在著「劑量窗口」形成優質的soi材料，但在水等離子體離子注入方式中soi材料結構質量對劑量變化更為敏感，隨著注入劑量的增大， soi材料的埋層厚度增大而表層硅厚度減小。
  4. In the current experimental parameter range, thin and / or ultra - thin soi with thickness of 50 - 150nm and box of 70 - 180nm thick were obtained. compared to the conventional simox - soi, the soi materials manufactured by water plasma ion implantation at the same implantation dosage and ion energy have much thicker box layers

    本論文一個重要發現是以水等離子體離子注入方式所形成埋層sio _ 2厚度得到了大幅度的展寬，相比傳統simox法，其展寬幅度高達50 ，這一重要發現為降低注入時間和soi制備成本提供了有效的途徑。
  5. Sige simox : oxygen ions with high dose were implanted into sige grown directly on silicon substrate for the first time, and sige - oi novel structure was formed successfully with additional high temperature annealing ; it has been confirmed that oxygen implantation with 45kev, 3 1017cm - 2 and annealing at 12500c in ar + 5 % o2 for 5 hours, are fit for the formation of sige - oi structure ; ge loss during the high temperature annealing has been observed, which is originated from ge volatility and ge diffusion ; it has been proposed to use nanoporous layer induced by h + / he + implantation to surppress ge diffusion and to use surface oxidation to overcome the upper limit of sige simox. sige smart - cut : hydrogen ions were implanted into sige material and followed by high temperature process ( 4000c to 7000c ) ; blistering study was done and suggested the possibility of sige layer transfer by smart - cut technology ; it is concluded that the bubble formation is easier in sige than in si, and the strain in sige / si and the difference of binding energy in sige and in si could possibly contribute to this effect. behavior of sige / si implanted with hydrogen : gave a detailed study on sige implanted by beamline or phi hydrogen implantation ; it has been found that great strain is introduced into sige by hydrogen implantation and this strain could be alleviated by high temperature annealing ; both for conditional beamline implantation and piii hydrogen implantation, 600 is appropriate for the post - implantation treatment

    Sige - simox工藝方面：首次採用硅（ 100 ）襯底上直接外延的100nm厚sige的樣品中注入高劑量的o離子，通過退火處理成功制備了sige - oi新結構，即sige - simox工藝，證實了以45kev注入3 10 ~ （ 17 ） 7cm ~ （ - 2 ）劑量的氧離子，隨后在氧化層的保護下經1250 ， ar + 5 o _ 2氣氛的高溫退火（ 5小時）過程，可以制備出sige - oi新型材料；實驗中觀察到退火過程中的ge損失現象，分析了其原因是ge揮發（ ge通過表面氧化層以geo揮發性物質的形式進入退火氣氛）和ge擴散（ ge穿過離子注入形成的氧化埋層而進入si襯底中） ，其中ge擴散是主要原因；根據實驗結果及實驗中出現的問題，對下一步工作提出兩個改進的方案：一是通過在si襯底中注入適量h ~ + / he ~ +形成納米孔層來阻斷ge擴散通路，二是可以通過控製表面氧化來調節安止額士淤丈撈要表面sige層中的ge組分，從而部分解決sige
  6. ( ii ) charging effects on temporal and spatial evolution of dusty plasma sheath in plasma source ion implantation. the temporal and spatial evolution of a dusty plasma sheath in plasma source ion implantation has been investigated with a fluid theory and a self - consistent dust - charging model. a negative potential pulse is introduced to form the plasma sheath

    （ ）塵埃粒子的充電效應對等離子體源離子注入（ ps ）鞘層時空演化的影響採用流體模型及自洽的塵埃粒子充電模型，我們研究了等離子體源離子注入時的塵埃等離子體鞘層的時空演化。
  7. An ion implanter without ion mass analyzer was applied to simulate the phi procedure to fabricate soi materials by implantation of water plasma ions. thin soi structure was successfully fabricated by the implanter using 50 ~ 90kev water plasma ion implantation with the dose ranging from 2 - 6. 5 + 017cm - 2 and, subsequently, the high temperature annealing

    我們使用無質量分析器的離子注入機，模擬等離子體離子注入過程，成功地在該注入機上用水等離子體離子注入制備出了界面陡峭、平整，表層硅單晶質量好，埋層厚度均勻的薄型soi材料。
  8. The effect of anneal on the gmr of co ion implantation discontinuous multilayer films is greater than that of without ion implantation films

    退火對離子注入后的非連續多層膜gmr效應的影響比未注入離子的非連續多層膜gmr效應的影響顯著。
  9. Polycrystalline diamond films were deposited on n - type si substrates. in order to achieve a better distribution of the implanted element, boron ions were implanted by two steps. the i - v curves were studied, the p - n junction effect is very evident

    在n型引襯底上沉積一層連續的金剛石膜，通過二次離子注入的方法使b離子比較均勻的分佈在金剛石膜中，通過測量i - v曲線，可以明顯的看出p - n結效應的存在。
  10. The theoretical analysis of large cryocondensation pump for nbi was mainly concerned. this paper emphasized on analyzing and calculating the heat load of cryocondensation pump, simulating thermal transmission coefficient and molecule transmission coefficient of radiation baffle according to monte carlo method, analyzing the process on cryo - surface and the factor of affecting pumping speed and hydrogen layer thickness of influencing cryo - parameter, etc. finally by verifying the pumping speed on large cryocondensation pump for neutral beam injection system, the pumping speed of 4. 0x105l / s ( for h2 ) was proven to be reasonable

    本文首先介紹了中性束注入系統的國內外發展狀況，闡述了中科院等離子體所ht - 7中性束注入系統的構成，主要對用於中性束注入系統的大型低溫冷凝泵的特性進行了理論分析；對冷凝抽氣面的熱負載進行了分析計算；用蒙特卡羅法對輻射擋板的分子傳輸幾率與熱傳輸幾率進行了模擬計算；研究了低溫表面的處理方法對抽速的影響以及氫層厚度對各低溫參數的影響；最後對用於中性束注入系統的大型低溫冷凝泵的抽速進行了驗證，得出的結論是：選取40萬升秒的抽速是合理的。
  11. In this paper, we implanted mn + ion of different dose into undoped semi - insulating ( 100 ) gaas substrate then performed rapid thermal annealing in different temperature and time. studied the different annealing condition dependence of the samples " structure, electrical and magnetic properties and the relation of the mn + forms and these properties

    本課題採用離子注入的方法將不同劑量的mn ~ +注入到非摻雜半絕緣（ 100 ） gaas單晶襯底中，然後進行不同溫度和時間的快速熱退火處理，研究了不同的退火條件對樣品注入層的晶體結構、電特性和磁特性的影響以及mn ~ +在樣品中的存在狀態與這些性質之間的關系。
  12. Structure analysis of the complex mosaic layer with nano - meter phase in w, c and c w implanted steel by tem

    離子注入鋼表面納米相鑲嵌復合層結構電子顯微鏡分析
  13. Coating cracks and defects are main reasons for the limited oxidation resistance of sic - c / sic. in this thesis, surface modification of sic coating was carried out with physical vapor deposition ( pvd ) and ion implantation & deposition, using al, b and si. effects of the modified coatings on the oxidation resistance of sic - c / sic were studied with sem, xrd and aes and so on

    本文採用了物理氣相沉積方法和離子注入沉積方法，以al 、 b 、 si為改性元素，對sic塗層表面進行改性，封填裂紋和缺陷；結合掃描電鏡（ sem ） 、 x射線衍射（ xrd ）和俄歇能譜（ aes ）分析，研究了改性層對sic - c sic復合材料抗氧化性能的影響。
  14. After annealed and co ion implantation, the highest gmr of the former is higher than that of the latter. the saturation magnetic field of discontinuous multilayer films is ikoe, nine times lower than that of granular films

    退火和注入co離子后， nifeco ag非連續多層膜的最大gmr效應大於nifeco ag顆粒膜的最大gmr效應，而且飽和磁場也降低了九倍，為1koe 。
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