離子蝕刻機 的英文怎麼說
中文拼音 [lízishíkèjī]
離子蝕刻機
英文
ion etching machine-
Hardware and software design for the inductively coupled plasma etching machine " s system are also presented
介紹了plc控制等離子體刻蝕機的硬體系統和軟體系統的設計。Many studies had attempted to characterize chemical weathering process by focusing on geochemisty of river particulate and sediment. the sediment geochemistry may reflect and compare with the carbonates and silicates weathering degree by introducing the chemical index of alteration ( cia ) and new sediment index of variation ( siv ) and elemental molar abundance ratio of the sediment. the one main objective of this study would provide and compare the relative weathering intensities of silicates and carbonates with the different basins
2沉積物地球化學與化學風化進程和機械剝蝕率化學風化指數與化學風化率屬于表徵化學風化作用意義不同的函數，前者為相對概念反映流域巖石在原巖基礎上己發生淋溶作用的深度，主要受到了氣候因子的深刻影響（中國流域沉積物化學風化指數由北到南呈有規則的遞增序列，氣候因子對風化進程的影響掩蓋了巖性的巨大差異） ，而化學風化率含義是指單位流域面積巖石風化淋溶產生的離子絕對總量。Generic specification of ion beam etching system
離子束蝕刻機通用技術條件The theory of ion - beam etching and ion sources are reviewed. the classification of ion - beam etching are introduced. according to the mechanism that ion sputtering leads to faceting, trenching, reflection and redeposition, some relative solutions are put forward
綜合敘述了離子束刻蝕技術和離子源的工作原理，簡單介紹了離子束刻蝕的分類，闡述了離子束刻蝕的物理濺射效應導致的刻面，開槽，再沉積等現象的產生機理及解決辦法，分析了kaufman離子源進行ribe的可行性及出現的問題。Rf plasma system 9200 is a barrel - type batch stripping system with optional high temperature capabilities for photoresist removal, nitride etch, and other cleaning applications in semiconductor and mems fabs
射頻等離子體9200是桶式爐脫模體，擁有可控制的高溫系統可去除光阻材料、氮化物蝕刻和半導體與微型機電系統等方面的清洗功能We give some useful analyses and the computer simulations for the ion etching process. compared with the atomic force microscope ( afm ) scanning photograph of the etching surface, the theoretical results prove that these simulation analyses assure the precision required by this problem, so these mathematical models are reasonable and correct. the analysis method in this paper is useful to analyze etching process, and it can also afford some valuable reference to etching technology
在本論文我們主要利用這個數學模型，對使用離子束刻蝕製作單臺階光柵的臺階與溝槽部分的表面面形隨時間的演變過程分別進行了計算機模擬分析，並通過把理論結果與在實驗中得到的刻蝕表面在原子力顯微鏡（ afm ）下拍攝的照片進行比較，結果說明這種模擬分析能夠保證對該問題分析所要求的精度，從而也證明了理論模型的合理性和正確性。分享友人