離子鍵聯 的英文怎麼說

中文拼音 [zijiànlián]
離子鍵聯 英文
ionic linkage
  • : Ⅰ動詞1 (離開) leave; part from; be away from; separate 2 (背離) go against 3 (缺少) dispens...
  • : 子Ⅰ名詞1 (兒子) son 2 (人的通稱) person 3 (古代特指有學問的男人) ancient title of respect f...
  • : 名詞1 [機械工程] (使軸與齒輪、皮帶輪等連接並固定在一起的零件) key 2 [書面語] (插門的金屬棍子)...
  • : Ⅰ動詞(聯結; 聯合) unite; join Ⅱ名詞(對聯) antithetical couplet
  • 離子 : [物理學] ion
  1. In this thesis, we have mainly studied the characteristics of chf3, c6h6 and cf4 electron cyclotron resonance ( ecr ) plasma using langmuir probe and optical emission spectroscopy ( oes ). the relative concentration of different radicals in chf3 plasma and the effect of chf3 / c6h6 ratio on bond configuration of a - c : f films were discussed. it was showed that h, f, c2 were the main radicals among radicals of h, f, c2, ch and f2 in chf3 ecr plasma

    重點研究了chf _ 3 、 cf _ 4和chf _ 3 c _ 6h _ 6放電等體中基團的分佈;分析了不同基團的相對密度隨宏觀放電條件(微波輸入功率、放電氣壓、源氣體流量比)的變化規律;探討了等體中各種基團的生成途徑;在不同源氣體流量比的條件下沉積了a - c : f薄膜並通過傅立葉變化紅外吸收光譜( ftir )的測量得到了薄膜中結構的信息;分析了a - c : f薄膜的沉積速率及其結構與等體空間基團分佈狀態之間的關
  2. The properties of cn thin films such as their morphology, component, crystal structure and the bonding structure and the relation between those properties and the gas - phase reaction parameters were discussed, showing that the deposition of p - c3n4 thin film is the compete result of various reaction processes in the dynamics balance conditions ; the process of cn films depo sition is diagnosed in situ through the optical emission spectra technique, the effects of experimental parameters on the concentration of the precursors and the gas - phase reactions in the plasma have been obtained ; the main reaction precursors for film deposition identified ; the relation between the characteristics of cn thin films and the reaction process in the plasma is analyzed. the cn thin films deposition under different substrate temperatures in high pressure pe - pld shows that the si atom of the substrate has participated the cn films growth process, based on this the growth mode of cn thin films on the si substrate is proposed. the further experiment of cn thin films deposition on si substrate scratched by diamond as well as covered with fe catalyzer has been attempted, which indicates that changing the dynamics conditions of the surface reaction can alter the growth characteristic of the cn thin films and can enhance obviously the films growth rate

    採用pld技術進行了碳氮化合物薄膜沉積,得到了含氮量為21at的cn薄膜;研究了襯底溫度和反應氣體壓強對薄膜結構特性的影響,給出了cn薄膜中n含量較小、 sp ~ 3合結構成分較少和薄膜中僅含有局域cn晶體的原因;引入脈沖輝光放電等體增強pld的氣相反應,給出了提高薄膜晶態sp ~ 3合結構成分和薄膜的含n量可行性途徑;應用pe - cvd技術以ch _ 4 + n _ 2為反應氣體並引入輔助氣體h _ 2 ,得到了含n量為56at的晶態cn薄膜;探討了cn薄膜形貌、成分、晶體結構、價狀態等特性及其與氣體壓強和放電電流的關系,證明了- c _ 3n _ 4薄膜沉積為滿足動力學平衡條件的各種反應過程的競爭結果;採用光學發射譜技術對cn薄膜生長過程進行了實時診斷,得到了實驗參量對等體中活性粒相對濃度和氣相反應過程的影響規律,給出了cn薄膜沉積的主要反應前驅物,揭示了cn薄膜特性和等體內反應過程之間的系;採用高氣壓pe - pld技術研究了不同襯底溫度條件下cn化合物薄膜的結構特性,揭示了si原對薄膜生長過程的影響,給出了si基表面碳氮薄膜的生長模式;在金剛石研磨和催化劑fe處理的si襯底上進行cn薄膜沉積,證明了通過控制材料表面動力學條件可以改變碳氮薄膜結構特性,並可顯著提高晶態碳氮材料的生長速率。
  3. Overlapped seeds are separated by certain algorithm. the key problem in hole - drill planter test is locating of holes centers, which is solved by using geometry moments of discrete masses. and then the holes distance is calculated from holes centers with fairly high precision

    針對穴播機檢測中穴距測量的關問題,研究了基於幾何中心矩的穴播質心、穴間距檢測演算法,獲得較高的檢測精度;研究了基於數學形態學的重疊種圖像檢測演算法,定義了串、並的種分佈形式,對重疊、擠挨種的分割進行了有效的工作。
  4. In tourism research, the introduction of the term " tourism region " can not only help to understand regional integration degree and spatial property of tourism factors, but help to realize the link between regions in the field of tourism development as well as the style, characteristic and strength of spatial interactions

    在旅遊研究中引入旅遊區域的概念,既可以了解旅遊要素的區域整合度、區域特性,又便於認識區域旅遊發展的區際系與空間相互作用方式、特點、強度等。 2 、構建了旅遊區域區際相互作用的距閥值模型,認為距是決定區際旅遊空間競爭性質與程度的關
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