電場偏極化 的英文怎麼說

中文拼音 [diànchǎngpiānjíhuà]
電場偏極化 英文
electric polarization
  • 電 : Ⅰ名詞1 （有電荷存在和電荷變化的現象） electricity 2 （電報） telegram; cable Ⅱ動詞1 （觸電） give...
  • 場 : 場Ⅰ名詞1 （平坦的空地 多用來翻曬糧食 碾軋穀物） a level open space; threshing ground 2 [方言] （...
  • 偏 : Ⅰ形容詞1 （不正; 歪斜） inclined to one side; slanting; leaning 2 （只側重一面） partial; prejudi...
  • 極 : i 名詞1 （頂點; 盡頭） the utmost point; extreme 2 （地球的南北兩端; 磁體的兩端; 電源或電器上電流...
  • 極化 : [物理學] polarization; overpotential; overtension; polarity極化器 polarizer; 極化強度 intensity o...
  1. With the aid of baffle movement, a technique named masking pretreatment and the method of vacuum deposition have been used to fabricate the ag - o - cs photoemissive thin films with internal field - assisted structure for the first time. the internal field - assisted photoemission characteristics of ag - o - cs thin films show that the photoelectric sensitivity is increased when the internal electric field is applied to the thin films, which indicates that the electric field has been effectively provided to the thin films by the above - mentioned internal field - assisted structure. such an enhanced photoemission is attributed to the variations in energy - band structure of ag - o - cs thin films, and which are considered to induce the lower - energy electrons to participate in the photoemission

    通過掩膜預處理和擋板轉移技術的配合，利用真空沉積方法首次制備了內場助結構ag - o - cs光電發射薄膜。 ag - o - cs薄膜內場助光電發射特性測試結果表明，該方法能夠有效地實現ag - o - cs薄膜體內電場的加載與表面電極的引出，薄膜光電靈敏度隨內場偏壓的增大而上升。 ag - o - cs薄膜在內場作用下的光電發射增強現象與薄膜體內能帶結構變化低能電子參與光電發射等物理機制有關。
  2. The temperature dependences on the resistance in all the thin films show that in the low temperature range the width of eg band level changes the transports, but in the high temperature range the thin films forms the small polarons hopping conductivity. the phase transition induced by the current is explained by the demagnetization and lattice distortion

    在高溫部分，材料呈現小極化子跳躍形式輸運特徵；實驗研究了不同偏置電流對薄膜的相變影響，表明電場可以引起材料中磁性的變化和晶格畸變，導致相變溫度點向低溫方向移動；材料的光致相變研究表明光子能量、光強和極化方向對輸運性質有影響。
  3. The main work can be summed up as follows : firstly, we studied the thermal - field properties of vcsels, and analyzed the influences of current spreading, material parameters and operating conditions on the temperature distributions. secondly, we began with the electrode voltage and calculated the equipotential s distributions, compared the distributions of voltages and current densities in different depths of vcsels, and then studied the influences of the oxide - confining region with different position or thickness, and the different sizes of the gain - guided aperture and emitting window on the distributions of the injected current density, carrier concentration and temperature in the active region. thirdly, we realized the coupling of electricity, optical and thermal - fields, worked out the threshold voltage, calculated the distributions of the injected current density, carrier concentration and temperature under different offset voltages, and analyzed the impacts of temperature profile and carrier density on the refractive index, fermi levels and optical - field

    具體工作可以概括如下：首先，研究了vcsel的熱場特性，分析了電流擴展，材料參數和工作條件對于溫度分佈的影響；其次，從電極電壓入手，計算出激光器中的等勢線分佈，並對不同深度處的電壓和電流分佈進行比較，研究了高阻區的不同位置和不同厚度、限制層和出射窗口半徑的大小對電流密度、載流子濃度和溫度分佈的影響；再次，實現了電、光、熱耦合，求出了閾值電壓，計算了不同偏置電壓下的電流密度分佈、載流子濃度分佈和熱場分佈，分析了溫度和載流子濃度變化對折射率、費米能級和光場的影響；最後，給出了考慮n - dbr和雙氧化限制層時激光器中的等勢線分佈，分析了n - dbr和雙氧化限制層對vcsel電流密度、載流子濃度、溫度和光場分佈的影響。
  4. The photo - induced phase transition of the different light intensities, photo - energies and directions of the polarized light is investigated. it suggested that the photo excites the down spin eg electrons and destroys the spin order system of the thin films. the relation between the he - ne laser reflectivity of the thin film, applied current and resistance was analyzed by the optics theory of solid state physics

    光子通過激發e _ g向下電子的躍遷，從而改變材料自旋極化方向，影響體系的輸運行為；首次研究了cmr薄膜的激光反射率和偏置電流的關系，並用固體光學理論對其定性分析，表明反射率的變化是由於電場引起材料的晶格畸變，改變了極化率，從而導致材料的折射率和反射率發生改變。
  5. In this paper, we first investigate the impurity effect ( ba2 + ) on the dielectric and phase transition properties in srtio3 within the framework of the transverse - field ising model ( tim ). then a possible coupling mechanism between the magnetism and dielectric properties in eutio3 is discussed and the magnetic influence on the frequency of the soft - phonon mode is investigated via the heisenberg model, soft - mode theory under the mean field approximation, the second quantization theory and the perturbation theory. and we proceed further investigation on eu1 - xbaxtio3 of

    我們發現baxeul _ xtio3 （ o 『 x 『 0 . 2 ）的介電常數和由內察的偏置場導致的電極化除了隨雜質濃度產生相應的變化，同時在磁和介電性質的藕合作用影響下在低溫下偏離通常的量子順電體行為，在尼爾溫度附近出現異常，且磁場通過對最近鄰自旋關聯的作用來影響介電常數和電極化。
  6. In chapter three, the mechanism responsible for scanning probe field - induced oxidation in ambient air is attributed to an electrochemical process, i. e., anodic oxidation or anodization, after the analyses is given of a surface of a sample exposed to air. the effects of biases, tip speeds on morphology of field - induced oxidation, are introduced and deduced in the form of kinetics formula of oxidation growth

    第三章首先通過分析大氣環境下掃描探針場致氧化加工的基本特性，得出掃描探針場致氧化的加工機理為電化學陽極氧化反應；引進大氣狀態下場致氧化的動力學方程，推導出偏置電壓與場致氧化物的幾何形態兩者之間的關系、掃描探針移動速度與場致氧化物的幾何形態兩者之間的關系。
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