電場漂移 的英文怎麼說

中文拼音 [diànchǎngbiāoyí]
電場漂移 英文
e×b drift
  • 電 : Ⅰ名詞1 （有電荷存在和電荷變化的現象） electricity 2 （電報） telegram; cable Ⅱ動詞1 （觸電） give...
  • 場 : 場Ⅰ名詞1 （平坦的空地 多用來翻曬糧食 碾軋穀物） a level open space; threshing ground 2 [方言] （...
  • 漂 : 漂動詞[方言] （事情、帳目等落空） fail; end in failure
  • 移 : Ⅰ動詞1. （移動） move; remove; shift 2. （改變; 變動） change; alter Ⅱ名詞（姓氏） a surname
  • 漂移 : 1 （漂流移動） be driven by the current; drift about2 [電子學] drift; shift; shifting; shunt runn...
  1. Elastic collision and inelastic collision are considered in oxygen molecule, nitrogen molecule by electron impart. the mail simulation results were as follow : ( 1 ) the variations of drift velocity and the average energy of electron with the e / n in o2 and n2 are obtained. the number of electrons for excitation, ionization, dissociation and dissociative ionization collision with the e / n and the energy of electron are analyzed emphatically

    考慮了各種彈性和非彈性碰撞過程，在純氧氣、純氮氣中，給出了不同簡化場e n條件下的電子漂移速度和平均電子能量的變化；著重分析了激發、電離、分解及分解電離碰撞的粒子數隨e n 、電子能量的變化，同時計算了激發發射光譜的波長。
  2. The anomalous fac pair creates a transient dusk - dawn electric field over the polar cap, tailing behind the original region current and drifting towards the night side until it falls into oblivion

    該異常場向電流對在極蓋區形成瞬間昏晨電場，尾隨原區電流向夜側方向漂移直至湮沒。
  3. The effect on display characteristic made by thermal deformations of the shadow mask is comprehensively investigated. by using the electron beam distribution automatic measurement system with a micro - deflective coil, a concave spot in luminance distribution can be get. it changes its position when the shadow mask changes its form

    本文系統全面地分析了傳統蔭罩的各類熱變形對顯示屏特性的影響，利用本文研製的電子束亮度分佈自動測試系統，附加一個微偏轉磁場，使相鄰兩電子束打在同一顏色的熒光粉條，並形成一個亮度凹點，當蔭罩變形時，凹點位置作相應的位移，以此原理跟蹤測量凹點位移量，即可得到色純漂移動態變化曲線。
  4. Based on an analysis of the major factors affecting the quality of data obtained in aeroelectromagnetic survey, this paper has put forward zero horizontal drift correction methods such as field value standardization and phase check and correction, studied and developed a suite of techniques suited to data - processing and graphical representation for aeroelectromagnetic method

    摘要在分析探討影響航空電磁測量數據質理主要因素的基礎上，提出了場值標定，相位校驗改正等零水平漂移改正方法，研究開發了一套適合航空電磁法數據處理與圖示的方法技術。
  5. During the research of the novel high - voltage soi lateral structure, we established its blocking theory based on poisson equation, which classifies its blocking mechanism by describing the potential distribution in the drift region very well when the device is in the blocking state

    在新型橫向高壓器件結構tsoi的研究中，本文通過二維泊松方程建立其解析理論，正確描述了漂移區中電場的分佈，並闡明其耐壓機理。
  6. Characterized by wide band gap, high breakage electric field, high thermal conductivity, high saturated electron mobility, cubic silicon carbide ( 3c - sic ), considered as one of the most promising wide band gap semiconductors, is widely utilized in high temperature, high frequency and large power semiconductor devices

    3c - sic被譽為最有潛力的寬禁帶半導體材料，具有帶隙寬、臨界擊穿電場高、熱導率高、飽和電子漂移速度大等優點，是高溫、高頻、高功率半導體器件的首選材料。
  7. During the high - voltage device design, the thick epitaxial layer ldmos which is compatible with current technology was researched. this device used piecewise vld and multiple region structure f reduce field layer. the using of the f reduce field layer effectively reduce the surface electric field of the device, shorten the length of its drift region, enlarge the choice of range of the ion implant dose of the p layer, and effectively restrain the disadvantageously affection on the breakdown voltage of the interface charge qss

    在高壓器件研究中對與現有工藝相兼容厚外延ldmos進行研究，該結構採用分段變摻雜多區p ~ -降場層，有效降低器件的表面電場，縮短器件的漂移區長度，增大p ~ -降場層注入劑量的選擇范圍，並有效地抑制界面電荷qss對器件耐壓的不利影響。
  8. In theoretical analysis, the motion of radially - emitted electron beam in diode region and drift region has been analyzed, and the relation between radial momentum or current of electron beam and the guiding magnetic field has also been studied, then the possibility to optimize the guiding magnetic field has been derived. the motion of radially - emitted beam electrons in smooth bore magnetron and smooth bore milo has also been studied theoretically. at last, the motion of radially - emitted beam electrons in compound axial and azimuthal magnetic field has been studied

    在理論分析中，初步分析了軸向發射條件下電子在二極體區域和漂移區的運動規律，電子徑向動量隨著外加磁場變化的規律，以及電子束電流隨著外加磁場的變化規律，還有二極體區域磁場優化的可能性;分別研究了有軸向磁場時以及有角向磁場時徑向發射的電子在光滑陽極結構中的運動規律，最後分析了在軸向和角向復合磁場中電子的運動規律。
  9. In addition to pic method, the numerical computation method is used as a compensation for the study of the characteristics of electron beam. the two methods are used separately to attain the trajectory of axially - emitted electron beam in diode region and drift region, and the trajectory of radially - emitted electron beam with axial, azimuthal, as well as compounded axial and azimuthal magnetic field. three two - dimensional codes and two three - dimensional codes have been made out to compute the trajectories

    本文特點之一就是採用粒子模擬和數值計算相結合的方法進行模擬計算，分別得到了軸向發射條件下電子在二極體區域和漂移區的軌跡，徑向發射條件下電子在角向磁場、軸向磁場、角向和軸向復合磁場中電子的運動軌跡，分別編制了三個二維電子軌跡計算程序和兩個三維電子軌跡計算程序，最後將粒子模擬和數值計算得到的結果進行了對比，得到了較為滿意的結果。
  10. Silicon carbide is becoming the most promising semiconductor material for high temperature, high frequency and high power devices because of its superior properties such as wide band gap, high breakdown field, high electronics saturation drift velocity, and high thermal conductivity

    Sic材料由於具有寬禁帶、高臨界擊穿電場、高飽和電子漂移速度、較大的熱導率等優良特性，因此成為製作高溫、高頻、大功率器件的理想半導體材料。
  11. Featured by wide band gap, high breakage electric field, high electron mobility, low dielectric constant, strong irradiation proof and excellent chemical stability, silicon carbide ( sic ), viewed as one of the most promising wide band gap semiconductors, is widely utilized in optoelectronic devices, high frequency and large power, high temperature electronic devices

    被譽為最有潛力的寬禁帶半導體材料一sic ，因其具有禁帶寬度大、擊穿電場高、熱導率大、電子飽和漂移速度高、介電常數小、抗輻射能力強、良好的化學穩定性等優異的特性，被廣泛地應用於光電器件、高頻大功率、高溫電子器件。
  12. Secondly, the radiation effects of the system of silicon gate si / sio2 ( silicon gate nmos and pmos ) implanted bf2 are made a deep systematic study. especially, the relationship between threshold voltage shift ( vth and vit vot ) in radiated mos transistor and irradiation dose rate, irradiation dose, irradiation temperature, bias voltage, device structure as well as annealing condition is explored emphatically

    在此基礎上，對bf _ 2 ~ +注入硅柵si sio _ 2系統低劑量率輻照效應進行了深入系統的研究，著重研究了bf _ 2 ~ -注入mos管閾值電壓漂移（ vth和vit 、 vot ）與輻照劑量率、輻照總劑量、輻照溫度、偏置電場、器件結構以及退火條件的依賴關系。
  13. The basic principle, main properties, typical parameters, technical characteristics and general situation of klystron are introduced. the electron beam prebunching in the modulated cavity and shift tube of relativistic klystron amplifer ( rka ) is studied analytically, a self - consistent equation of radiation generated by the prebunched electron beam in the radiation cavity is derived using the field method of particle ? wave interaction instead of the electrical circuit method, and in terms of it, the gain in the linear regime calculated, a field analysis method is proposed. the theory analysis shows that the characteristic parameters, such as resonance frequency, real part of gap - impedance, external quality fadtor in all kinds of klystron output circuits including single - beam, multi - beam, single - gap, multi - gap, single - beammulti - gap, multi - beam multi - gap klystron output circuit, can be calculated by the field analysis method

    本文系統的介紹了速調管的工作原理、主要特點、發展概況、主要性能指標和技術特點，解析的研究了電子束在相對論速調管放大器的調制腔和漂移管中的預群聚;用粒子波互作用的場方法導出了在輻射腔中預群聚電子束產生輻射的自洽方程，同時對線性區的增益進行了計算。理論分析表明，場分析法可用於計算單注單間隙、多注多間隙、單注多間隙和多注多間隙速調管輸出迴路的諧振頻率、間隙阻抗實部和外觀品質因數等特性參數。
  14. In order to improve the quality of the voltage signals, this paper has adopted the scheme of three phases and six organs in signal - generator part, which can eliminate the errors caused by the assembly warp and the zero shift of organs. this paper also has analyzed the distribution and varying rules of the magnetic field in the signal - generator part, then based on the conclusion of the analysis improved the structure of signal - generator, which could completely eliminate the noise signal caused by the roughness of the face on the magnetic steel ring. the improvement not only met the requirement of this study, but established the theory foundation for the super - high precision magnetic encoder in future research

    因此，為提高原始電壓信號的質量，本文採用三相六元件的信號發生方案，通過差分處理濾除了由於裝配偏差和零點漂移帶來的信號誤差;本文對編碼器信號發生結構進行了磁場分析，依據磁場分析的結論對編碼器常用的信號發生結構進行了改進，改進后的結構利用積分原理在理論上能夠完全消除信號中由磁鋼環表面粗糙度引起的信號噪聲，進一步提高了信號質量，此結構不僅滿足了本課題的需要，而且為今後研製超高精度的磁電式編碼器奠定了理論基礎。
  15. And the simulation on the nonlinear beam - wave interaction of two - cavity gyroklystron is made. the influences of the drift length and beam voltage and current and the velocity ratio of the electron beam and et al. on efficiency and gain are analyzed in detail

    並對34ghz兩腔迴旋速調管的注?波互摘要作用進行了大量的數值模擬研究，分析了漂移區長度、電壓、電流、速度lhq值、磁場k ， ； 、注入波功率等多種因素對互作用電子效率及增益的影響。
  16. In simulations, all important phenomena, such as non - neutral sheath widening near cathode, cathode electron emitting, current channel migrating to the load side of the plasma, ion accelerating toward cathode and magnetic insulation of cathode emitting electrons etc, have been observed and depict the internal physics of this device. also presented is the influence of cathode emitted electrons on phenomena in the conduction processes of pegs. the simulation results show, without cathode emitted electrons, rapid magnetic field penetration takes place only in region near the cathode, with cathode emitted electrons, magnetic field penetration takes place in all plasma region

    診斷發現了陰極表面非中性鞘層的形成、陰極電子發射、電流通道的漂移、等離子體離子加速以及陰極電子磁隔離等物理現象，揭示了這一斷路器件的物理機制；分析了陰極電子對peos導通過程中的物理現象的影響，模擬結果顯示：忽略陰極電子作用，磁場滲透現象主要出現在陰極表面區域，考慮陰極電子作用，磁場滲透現象出現在整個等離子體區域。
  17. The saturation time in our simulation is consistent with the prediction of the theory. furthermore, we also studied the propagation of two pulses with inverse phase. in this case, the wakefield excited by the first pulse will be absorbed by the second pulse which shifts to higher frequency

    此外，我們還研究「位相相反」的兩個脈沖在稀薄等離子體中的傳播，第二個激光脈沖由於吸收了前一脈沖激發的靜電場，頻率向高頻方向漂移，得到頻移的大小與符合理論推測。
  18. 2. to design an axial magnetic field. the cathode lies in 0. 4 - 0. 7 of peak value of the magnetic field and excursion channel in a uniform magnetic field to suppress space charge effects ; to design transition section between the gun and excursion channel in converse computation. 3

    選擇電子槍陰極處于軸向聚焦磁場峰值的0 . 4 - 0 . 7倍處;漂移通道（互作用區）位於均勻軸向聚焦磁場中，以抑制電子束的空間電荷效應;使用反演算法設計電子槍和漂移通道之間的過渡區。
  19. Graded doping is adopted in both sides of the junction ( double graded doping ). this results in a strong ( drift ) electric field throughout the whole active layer. this field will accumulate minority carriers effectively and the whole internal quantum efficiency is increased

    漂移場的形成是通過mbe技術，在結的兩側都採用梯度摻雜（即雙梯度摻雜） ，從而在整個有源層都建立起一個強的（漂移）電場，有效地利用載流子在電場作用下的漂移作用收集少數載流子，使得總內量子效率得以提高。
  20. In this design, the double graded doping solar cell accumulates the minority carriers with the drift field, which is located at the whole graded space. this means that the accumulation of minority carriers doesn ’ t depend on the above conditions

    採用與眾不同的通過在p區和n區都採用梯度摻雜這樣一個所謂雙梯度摻雜，在整個有源層獲得高達104v / cm的漂移電場。
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