電壓敏感電阻 的英文怎麼說
中文拼音 [diànyāmǐngǎndiànzǔ]
電壓敏感電阻
英文
voltage dependent resistor- 電 : Ⅰ名詞1 (有電荷存在和電荷變化的現象) electricity 2 (電報) telegram; cable Ⅱ動詞1 (觸電) give...
- 壓 : 壓構詞成分。
- 敏 : Ⅰ形容詞(靈敏;敏捷) quick; agile; smart; nimble Ⅱ名詞(姓氏) a surname
- 感 : Ⅰ動詞1 (覺得) feel; sense 2 (懷有謝意) be grateful; be obliged; appreciate 3 (感動) move; t...
- 阻 : 動詞(阻擋; 阻礙) block; hinder; impede; obstruct
- 電壓 : voltage; electric tension; electric voltage
- 敏感 : sensitive; susceptible; tactful
- 電阻 : (物質阻礙電流通過的性質) resistance; electric resistance (電路中兩點間在一定壓力下決定電流強度...
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The sensor adopted micro melts technology and introduce aviation application science and technology ; using high temperature glass the micro processing silicon voltage dependent resistance strain gauge to melt on the stainless steel diaphragm
傳感器採用的微熔技術,引進航空應用科技,利用高溫玻璃將微加工硅壓敏電阻應變片熔化在不銹鋼膜片上。The flow - measuring system adopts the khafagi flume as the first sense organ to realize the flow / head signal conversion. the head signal is picked up and converted into voltage signal by the buoy - level mechanism and the magnet - resistant angle measuring sensor
該流量測量系統採用卡發基水槽作為一次敏感器件實現了流量水位的信號轉換,並通過浮子?杠桿測量機構和磁阻式角度傳感器對水位信號進行拾取並轉化為電壓信號輸出。The optimal aging conditions for the sensors investigated are : u 200 mv, f1 khz, t24 - 48 h, rh 81 - 87 %, t 3 80c ii the sensing mechanism of the humidity sensors has been explored by means of complex impedance analysis
合適的老化條件為:施加電壓200mv , 1khz , 24 48h , 38 , 81 87 rh 。採用復阻抗譜分析法,研究元件感濕機理,認為napss濕敏元件感濕機理為離子導電,其電導隨濕度的變化可由改進的onsager方程描述。In the eddy - current testing, testing coil is the sensitive component connecting the specimen and the instrument, so it is called transducer. the information of the test specimen is reflected by the variation of the coil impedance ( or induced voltage )
在渦流檢測中,檢測線圈是用來連接測試儀器和被測試件的敏感元件,它是渦流檢測中的傳感器,被檢試件的信息是通過線圈阻抗(或感應電壓)的變化反映出來的。Surface acoustic wave components, capacitors, emc filters, ntc thermistors, ptc thermistors, ferrites & accessories, inductors, microwave ceramics, arrestors, rf modules etc
聲表面波元件,電容器,電源濾波器,熱敏電阻,壓敏電阻,鐵氧體磁心與附件,電感器件,微波陶瓷元件,氣件放電管,射頻前羰模塊等等Traditionally, zno is used as acoustic wave devices ( saw ), bulk acoustic devices ( baw ), gas sensors, varistors, transparent electrodes, and so on
傳統上, zno薄膜被廣泛應用於聲表面波器件、體聲波器件、氣敏傳感器、壓敏電阻、透明導電電極等領域。The sensor offset is governed by its thermal drift, electric drift and time drift, so eliminating the offset thermal drift in the measurement of sensor needs to keep the values of resistance and temperature coefficient for different resistor strips to be equal each other
壓力傳感器的零點存在熱漂移、電漂移和時間漂移,減小壓力傳感器的熱零點漂移的措施是各力敏電阻的電阻值及其溫度系數的相等性。The sensor offset is governed by its thermal drift, electric drift and time drift, so eliminating the offset thermal drift in the measurement of sensors requires to keep the values of resistance and temperature coefficient for different resistor strips to be equal each other
壓力傳感器的零點存在熱漂移、電漂移和時間漂移,減小壓力傳感器的熱零點漂移的措施是各力敏電阻的電阻值及其溫度系數的相等性。Traditionally, zno is used as surface acoustic wave devices ( saw ), bulk acoustic devices ( baw ), gas sensors, varistors, transparent electrodes, uv - detectors, and etc. in recent years, zno has gained more and more attention as a wide band semiconductor
傳統上, zno薄膜被廣泛應用於聲表面波器件、體聲波器件、氣敏傳感器、壓敏電阻、透明電極、紫外探測器等領域。近年來, zno作為寬禁帶半導體光電材料的研究越來越受到人們的重視。The sensing chip is connected with special amplification circuit of the transmitter by the conductor, and using piezo - resistance effect of semi - conductor silicon material to realize the transformation between pressure and electric signal
敏感晶元通過導線與變送器專用放大電路相連接。它利用半導體硅材料的壓阻效應,實現壓力與電信號的轉換。Currently, zno is attracting attention for its application to uv light - emitters, varistors, transparent high power electronics, surface acoustic wave devices, piezoelectric transducers, gas - sensing and as a window material for display and solar cells
目前, zno由於在紫外光輻射、變阻器、透明高功率電子器件、表面聲波器件、壓電傳感器、氣敏傳感器及作為顯示器件和太陽能電池窗口材料方面的廣泛應用而引起人們極大關注。And after the structure simulated by the aid of the finite element method ( fem ) software ansys, the optimal parameters are approached. a mems micro force sensor suitable for the microgripper is achieved which is based on piezoresistance effect of semiconductor. the operating principle of micro force sensor is presented, and modeling, analyzing the structure, achieving the best parameters
為滿足微夾持器的需要,設計了半導體壓阻式mems微力傳感器,分析了微力傳感器的工作原理,對其結構形式進行了建模、分析,求取了結構的最優參數;給出了壓阻式傳感器的基本設計原則,選擇了合理的材料,以力學分析為根據,確定了力敏電阻條的位置,並對電阻條進行了設計,介紹了微機械製作技術,給出了傳感器晶元制備流程。Voltage dependent resistor
電壓敏感電阻Eddy current nondestructive testing ( ecndt ) is widely used to detect the thinness and defects of the sample, because of its characteristics of non - contact, high sensitivity and ease of detection. the principle of ecndt is that : when a probe coil with the ac exciting source is put near a sample, eddy current will be produced in the sample which will conversely affect the impedance of the coil according to the farad theorem. any un - uniformity in the sample will change the impedance of the coil and the output voltage
渦流無損檢測技術具有靈敏度高、檢測速度快、非接觸等特點廣泛應用於厚度檢測和缺陷探傷,它的原理是當載有交變電流的檢測線圈靠近金屬導體時在導體中產生渦流,該渦流又影響原磁場,使得線圈的阻抗和感應電壓發生變化,通過分析阻抗或感應電壓的變化來獲得被測導體的信息。Then the sensor devices will transform the varieties of resistance into the varieties of the voltage, and finish the work of gathering the signal. in succession, we have designed and discussed the all and the one
設計的結果能將內、外胎的壓力變形敏感轉換為電阻的變化,並通過傳感裝置轉換為電壓的變化,完成了信號的採取工作。Based on silicon - piezoresistive method, the paper first gives the theory of array silicon piezoresistive pressure, acceleration sensor, and the design of its incorporated chip, microstructure and out - circuit. several key techniques of making array silicon piezoresistive pressure, acceleration sensor such as 1c technic, mems ( silicon - silicon direct bonding, anodic bonding, anisotropic etching ) is also studied. minuteness engine machining, anode bonding etc. in the paper there are three ways which are examine - form, curve simulanting, to carry out sensors non - linear self - emendating ; adopt the several curves approaching and curve simulating to achieve the aims of sensor error self compensation, fusion technology etc. therefore, it providing referenced values of ways and directions for sensor system directing on
論文首先以硅壓阻效應原理為基礎,討論了陣列式硅壓力、加速度傳感器的設計原理,並對陣列式硅壓力、加速度傳感器中集成敏感晶元(壓力、加速度) 、總體結構和壓力陣列的信號處理電路進行了設計,在陣列式硅壓力、加速度傳感器的研製中,還研究了半導體平面工藝、大規模集成電路技術、微機械加工技術(硅硅鍵合、靜電封接、各向異性腐蝕)等關鍵技術的應用。分享友人