電壓襯度 的英文怎麼說
中文拼音 [diànyāchèndù]
電壓襯度
英文
voltage contrast-
Using jgp560c magnetron sputtering equipment, cu / ag film are deposited on cd1 - xznxte substrate by dc magnetron sputtering in order to get the influences of the main experiments parameters such as sputtering power, gas flow, vacuum air pressure, magnetoelectricity power and substrate temperature on deposition rate of film, discovered that dc sputtering power is the most key factor influencing the deposition rate
在jgp560c型超高真空多功能磁控濺射鍍膜機上，採用直流磁控濺射法在cdznte晶體上制備出cu ag合金薄膜，揭示了氣體流量、直流濺射功率、勵磁電源功率、工作氣壓和襯底溫度等工藝參數對沉積速率的影響規律。結果表明濺射功率對沉積速率的影響最大，隨濺射功率的增大沉積速率快速增大。It was concluded that, the structure of ito thin films were influenced by many working parameters such as substrate temperature, oxygenous pressure and substrate and so on. it was indicated by sem spectra of zno thin films that the surface of the sample was leveled off, and the crystals were felsitic
結果表明，對于ito薄膜，薄膜的光電性能薄膜結構的擇優取向性和與襯底溫度、濺射氧氣壓等工藝參數有很大關系， ito薄膜的sem表明，樣品表面較平整，且晶粒也比較緻密。It is suitable to be used as the medium to filter the high purity and strong corrosive gas or liquid, the air plug of battery, gasket, seals for medium / low pressure, the waveguide tube pre - heater for boiler, the sealing wash, the cover of big - powered micro - wave antenna, and radar antenna of twt etc
適用於過濾、高純度、強腐蝕性的氣體液體介質、蓄電池上作氣塞、襯墊、中低壓密封元件、鍋爐波管預熱器、密封圈和軍用微波大功率天線罩，以及行饋網路雷達天線等。Author analyzed the relationship between the length and the impurity concentration of drift region and thickness of buried oxide layer and thickness of soi and the charges of oxide layer and bias voltage of bulk and breakdown voltage and on - resistance by numerical simulation
採用數值模擬分析方法，深入研究了漂移區長度、漂移區濃度、埋氧層厚度、頂層硅厚度、氧化層電荷以及襯底偏壓對resurf效應、擊穿電壓和導通電阻的影響。4. combined with the design of the three gorges prestressed concrete penstock with steel liner in the three gorges power. station, the consistence among the results of theory calculating, the analysis of plane finite element and three dimensional finite element is proved, the concrete stress distributions of the prestressed concrete penstock are analyzed with different steel liner thicknesses, different crack resistances, different concrete thicknesses and different initial radial gaps between steel liner and concrete. the feasibility of the design method of prestressed concrete penstock with steel liner is proved
結合三峽電站鋼襯預應力混凝土聯合受力壓力管道的設計方案選擇及論證分析，對比分析了鋼襯預應力混凝土壓力管道理論計算、平面有限元和管壩整體三維有限元分析結果的一致性，確定了管道結構在不同鋼襯厚度、不同抗裂度要求、不同外包混凝土厚度及不同鋼襯與管壁混凝土間初始徑向間隙等因素影響下的內力分佈規律，驗證了鋼襯預應力混凝土壓力管道的設計方法。The properties of cn thin films such as their morphology, component, crystal structure and the bonding structure and the relation between those properties and the gas - phase reaction parameters were discussed, showing that the deposition of p - c3n4 thin film is the compete result of various reaction processes in the dynamics balance conditions ; the process of cn films depo sition is diagnosed in situ through the optical emission spectra technique, the effects of experimental parameters on the concentration of the precursors and the gas - phase reactions in the plasma have been obtained ; the main reaction precursors for film deposition identified ; the relation between the characteristics of cn thin films and the reaction process in the plasma is analyzed. the cn thin films deposition under different substrate temperatures in high pressure pe - pld shows that the si atom of the substrate has participated the cn films growth process, based on this the growth mode of cn thin films on the si substrate is proposed. the further experiment of cn thin films deposition on si substrate scratched by diamond as well as covered with fe catalyzer has been attempted, which indicates that changing the dynamics conditions of the surface reaction can alter the growth characteristic of the cn thin films and can enhance obviously the films growth rate
採用pld技術進行了碳氮化合物薄膜沉積，得到了含氮量為21at的cn薄膜；研究了襯底溫度和反應氣體壓強對薄膜結構特性的影響，給出了cn薄膜中n含量較小、 sp ~ 3鍵合結構成分較少和薄膜中僅含有局域cn晶體的原因；引入脈沖輝光放電等離子體增強pld的氣相反應，給出了提高薄膜晶態sp ~ 3鍵合結構成分和薄膜的含n量可行性途徑；應用pe - cvd技術以ch _ 4 + n _ 2為反應氣體並引入輔助氣體h _ 2 ，得到了含n量為56at的晶態cn薄膜；探討了cn薄膜形貌、成分、晶體結構、價鍵狀態等特性及其與氣體壓強和放電電流的關系，證明了- c _ 3n _ 4薄膜沉積為滿足動力學平衡條件的各種反應過程的競爭結果；採用光學發射譜技術對cn薄膜生長過程進行了實時診斷，得到了實驗參量對等離子體中活性粒子相對濃度和氣相反應過程的影響規律，給出了cn薄膜沉積的主要反應前驅物，揭示了cn薄膜特性和等離子體內反應過程之間的聯系；採用高氣壓pe - pld技術研究了不同襯底溫度條件下cn化合物薄膜的結構特性，揭示了si原子對薄膜生長過程的影響，給出了si基表面碳氮薄膜的生長模式；在金剛石研磨和催化劑fe處理的si襯底上進行cn薄膜沉積，證明了通過控制材料表面動力學條件可以改變碳氮薄膜結構特性，並可顯著提高晶態碳氮材料的生長速率。In the work, mid - frequency pulse magnetron sputtering is used to prepare znoral thin films used as the back reflector of the thin silicon films solar cells. the best techological condition was obtained by optimizing the preparing conditions, ( var is decided by the deposition rate, target voltage : 265v, gas pressure : 0. 6pa, the high base vacuum is expected
本文採用中頻脈沖磁控濺射法，通過優化zno ： al薄膜的制備工藝，如靶電壓、本底真空度、工作氣壓、襯底溫度、 o _ 2 ar ，得到可用於硅薄膜太陽能電池背電極的zno ： al薄膜。It also has short protection and voltage overshot protection block. devices and ics based on esoi have the advantages of not only cheaper substrate, good performance of soi technology, but also obtaining a certain breakdown voltage and optimization of self - heating effect
基於esoi的器件及集成電路不僅襯底材料制備工藝簡單，硅層厚度均勻性好，器件及電路特性具有soi結構的優點，而且還兼顧一定的耐壓，對自加熱效應也得到優化。This paper presents the effects of some features on the productivity of raw c60 materials, such as distance and approaching speed of electrodes, helium partial pressure and arc current etc. then we separate and purify the raw materials and obtain pure solid c60 of 99. 9 % and compare the purification efficiency and effect of different fluxion phase and fixed phase and discuss the effects of the experimental conditions, such as the depositing speed, the type of the substrate, the surface structure of the substrate and the temperature of the substrate. finally, we use xps, afm, ultraviolet, infrared and raman to analyze the component, structure and feature of the films qualitatively and quantitatively
本文首先研究了氦氣分壓、弧電流大小、電極間距以及電極推進速度等實驗條件對制備c _ （ 60 ）粗品產率的影響；接著選用柱色譜法分離提純得到了純度大於99 . 9的c _ （ 60 ）固體，比較了不同流動相和固定相的提純效率和效果；然後採用自己改進后的真空鍍膜機，利用電阻式加熱蒸鍍方法，得到了純c _ （ 60 ）薄膜和不同摻雜比的銀摻雜薄膜；探討了沉積速率、襯底種類、襯底表面結構以及襯底溫度等實驗條件對薄膜結構的影響；最後通過xps ， afm ，紫外，紅外，拉曼對薄膜的成分、結構和特性作了定性和半定量分析。Corundum mullite product adoprs electrocast refractories. through high pressure formation and high temperature burning, this product has comparatively high refractoriness, mechanical strength and slftening temperature under load. it can be widely used as inner lining. of various industrial furnace under such hard working conditions as high temperature, flushing and erosion
剛玉莫來石製品是採用電熔合成原料，高壓成型，高溫燒成的具有較高耐火度及機械強度，較高荷重軟化濁的可廣泛應用於各類工業爐高溫、沖刷、侵蝕條件較苛刻的窯爐內襯的耐火製品。During the inspection by afm and sem, we found that the surfaces morphology of samples was even and smooth, the surface roughness was small. the films were composed of some excellent columnar crystallites. the xps results were found that zn existed only in the oxidized state and the concentration of al was less and the presence of loosely bound oxygen on the surface of azo thin films was reduced after ar + etching
由以上對azo薄膜的組織結構和光電性質的研究，我們得到了用直流反應磁控濺射法制備azo薄膜的最佳工藝條件為:氧氬比0 . 3 / 27 ，襯底溫度200 ，工作壓強5pa ，靶基距7 . 5cm ，功率58w ，退火溫度400 。As a result, we choice none - buffered x cut lithium niobate electrode structure to achieve the half wave voltage as low as possible
因此本文選擇了無隔離x切襯底的調制結構，以實現盡可能低的半波電壓長度乘積。Undoped bn films exhibit a resistivity of 1. 8 x 10 " q cm and those of doped are 7. 3 x107 q cm. the influence of process parameters for doping studied, it showed that both s fountain temperature and substrate temperature impact the resistivity evidently. analyzed by xps and aes, s dopant concentration is made some difference with substrate negative bias voltage
研究了工藝參數對薄膜電阻率的影響，實驗表明硫源加熱溫度和襯底溫度對氮化硼薄膜的電阻率有明顯影響，直流負偏壓對薄膜的電阻率並沒有明顯影響， xps光電子能譜表明直流負偏壓對薄膜中的硫含量有一定影響。The application of voltage contrast image of the sem in failure analysis
掃描電鏡電壓襯度像方法在失效分析中的應用分享友人