電子密度分佈 的英文怎麼說

中文拼音 [diànzimìdùfēnbù]
電子密度分佈 英文
electron density distribution
  • 電 : Ⅰ名詞1 （有電荷存在和電荷變化的現象） electricity 2 （電報） telegram; cable Ⅱ動詞1 （觸電） give...
  • 子 : 子Ⅰ名詞1 （兒子） son 2 （人的通稱） person 3 （古代特指有學問的男人） ancient title of respect f...
  • 密 : Ⅰ名詞1 （秘密） secret 2 [紡織] （密度） density 3 （姓氏） a surname Ⅱ形容詞1 （距離近; 空隙小）...
  • 度 : 度動詞[書面語] （推測; 估計） surmise; estimate
  • 分 : 分Ⅰ名詞1. （成分） component 2. （職責和權利的限度） what is within one's duty or rights Ⅱ同 「份」Ⅲ動詞[書面語] （料想） judge
  • 電子 : [物理學] [電學] electron
  1. With the use of finite method we have developed computer simulation software for vacuum microtriodes with wedge - shaped and cone - shaped cathode on the basis of stduying deeply the field emission theory of vacuum microelectronics. the software included field section, grid point numbering, and the calculation of electric currents, transconductance and cathode capacitance, moreover, it can simulate the properties of vacuum microeletronic with variant structures and sizes. the relationship was studied and simulated among electic properties and device structures, sizes and cathode materials etc. the optimized design of vacuum microtiode was proposed

    本文在深入研究真空微電子器件場致發射理論的基礎上，根據圓錐形、楔形陰極真空微電子三極體的不同特點，分別建立了物理和數學模型，在考慮空間電荷密度影響的前提下，以有限元法為基礎採用迭代的方法計算出真空微電子三極體內的電勢分佈情況，繪制出了等勢線、電子軌跡線，並得到了器件電學性能隨幾何參數的變化情況。
  2. In this paper, we focus on the following three topics : ( i ) density distribution of dusty plasma in the low - pressure collisionless positive column the radial density distributions of electron, ion and dust particle in the low - pressure collisionless positive column are investigated with a fluid theory and a self - consistent dust - charging model

    本文著重以下三個方面的研究： （ ）低氣壓無碰撞輝光放電正柱區塵埃等離子體密度徑向分佈本文採用流體模型和自洽的塵埃充電模型，研究了低氣壓無碰撞輝光放電正柱區的電子密度、離子密度和塵埃粒子密度的徑向分佈。
  3. The numerical computing methods of the equations involving the static electric - magnetic field, electronic motion in the static electric - magnetic field, and so on are detailed. the methods of the boundary disposal are introduced. the phenomenon of secondary electron emission has also been studied

    介紹了數值計算方法，包括靜電磁場的數值計算、在靜電靜磁場中電子運動軌跡的數值計算、空間電荷密度的數值計算和空間電位分佈的數值計算;介紹了邊界處理方法。
  4. In this thesis, we demonstrate the study of si - based light emitting materials and its importance in si - based photonics integration. we discussed mainly the gain, differential gain, threshold current of si - based quantum - dot laser and the dependence of threshold current on temperature from discrete energy level of three - dimension confined quantum - dot and state density distribution of 5 - function

    本文闡述了si基光發射材料的研究進展及它在硅基光電子集成中的重要地位，從三維受限量子點的分立能級和函數狀的態密度分佈入手，著重討論了si基量子點激光器的增益、微分增益、閾值電流及閾值電流的溫度特性。
  5. Numerical simulation results indicate that, for low temperature dust particles, dust particles mainly exist in the area near the column center and their charge - number can be considered as a constant, while in the area where there are no dust particles, ion and electrons are in ambipolar diffusion ; for high temperature dust particles, both the distribution regions of dust particle and high ion density are expanded and dust charge - number is increasing with the distance from the center

    計算結果表明：當塵埃粒子的溫度較低時，塵埃粒子主要集中在圓柱形放電器的中心很小的區域，塵埃粒子攜帶的電荷幾乎是一個常數，受塵埃粒子空間電荷的影響，離子在該區域的密度最高。在遠離中心區域，離子和電子呈現雙及擴散特點；當塵埃粒子的溫度較高時，塵埃粒子分佈的區域和高離子密度區域擴大，塵埃粒子離放電器中心越遠，攜帶的負電荷越多。
  6. We obtained holographic interferogram, from which we got the space distribution of plasma electron density by abel inversion

    由全息干涉條紋圖樣求解等離子體電子密度空間分佈要用到abel變換。
  7. This paper studies the application of inductively coupled plasma ( icp ) technology to the etching compound semiconductor insb - in film. by means of single probe and double probe, the ion density and electron temperature of chamber ( 30mm and 50mm in height respectively ) under varied process condition were diagnosed. the spatial distribution of the axial position of the two parameters and the varied curve that the two parameters varies with the power and air pressure are obtained

    利用單探針和雙探針診斷30mm高反應室和50mm高反應室在各種工藝條件下的離子密度和電子溫度，得到這兩個參數在反應室軸向位置的空間分佈、隨功率和氣壓的變化曲線、頂蓋接地和反應室體積對它們的影響，結果表明離子密度為10 ~ 8 10 ~ （ 10 ） cm ~ （ - 3 ） ，電子溫度在4 10ev之間；當頂蓋接地時，該處的等離子體密度明顯大於不接地；在同樣條件下， 50mm高反應室內的離子密度明顯大於30mm高反應室。
  8. Numerical simulations were done to show the distortion of the wavefront and the interference pattern under several kinds of typical plasma density distributions. the ray path in plasma was calculated by the numerical solution of the vector equation of light ray, when the plasma density was closing to the critical electron density of the laser frequency. through the simulations, the factors that influence the measurement were found out under different density distributions and shapes of plasma

    在此基礎上，採用數值模擬的方法，計算了在幾種典型的等離子體密度分佈下，激光波面的變化和產生的干涉圖樣；並用光線矢量微分方程的數值解法計算了當等離子體密度接近光頻臨界電子密度時，光線在等離子體中的傳播路徑，從中掌握了在不同的等離子體密度和形狀下，進行干涉測量所應估計到的因素。
  9. The main work can be summed up as follows : firstly, we studied the thermal - field properties of vcsels, and analyzed the influences of current spreading, material parameters and operating conditions on the temperature distributions. secondly, we began with the electrode voltage and calculated the equipotential s distributions, compared the distributions of voltages and current densities in different depths of vcsels, and then studied the influences of the oxide - confining region with different position or thickness, and the different sizes of the gain - guided aperture and emitting window on the distributions of the injected current density, carrier concentration and temperature in the active region. thirdly, we realized the coupling of electricity, optical and thermal - fields, worked out the threshold voltage, calculated the distributions of the injected current density, carrier concentration and temperature under different offset voltages, and analyzed the impacts of temperature profile and carrier density on the refractive index, fermi levels and optical - field

    具體工作可以概括如下：首先，研究了vcsel的熱場特性，分析了電流擴展，材料參數和工作條件對于溫度分佈的影響；其次，從電極電壓入手，計算出激光器中的等勢線分佈，並對不同深度處的電壓和電流分佈進行比較，研究了高阻區的不同位置和不同厚度、限制層和出射窗口半徑的大小對電流密度、載流子濃度和溫度分佈的影響；再次，實現了電、光、熱耦合，求出了閾值電壓，計算了不同偏置電壓下的電流密度分佈、載流子濃度分佈和熱場分佈，分析了溫度和載流子濃度變化對折射率、費米能級和光場的影響；最後，給出了考慮n - dbr和雙氧化限制層時激光器中的等勢線分佈，分析了n - dbr和雙氧化限制層對vcsel電流密度、載流子濃度、溫度和光場分佈的影響。
  10. The output spot - size of our non - flowing tea co2 laser is quite large, only slightly smaller than the section of the excited media, this agrees with the calculated spatial distributions of the initial electron density for pre - ionization well

    由我們的非流動型teaco _ 2激光器獲得的輸出光斑相當大，僅比激活區截面略小，這與理論計算的預電離初始電子密度空間分佈規律有較好的一致性。
  11. Starting from the theory of two photoionization, we simplified the model of the ultraviolet light source, derived the equation for the spatial distributions of the initial electron density between the main electrodes, and then gave a simple method to homegenize the spatial distribution of the initial electron density between the main electrodes

    本文從光離化的雙光子吸收這一理論出發，簡化紫外光源模型后，導出了主電極間初始電子密度的空間分佈規律並給出了使其空間分佈均勻化的簡單方法。
  12. It presents images of electron density distribution inside the object

    它可以提供關於物體內部物質電子密度分佈的圖像信息。
  13. Abstract : this paper describes the thermal effects of a coaxial rf - excitedco2 laser ， based on the balance equations of electron density and energy ， current continuity equation ， and heat conduction equation. depende ncies of the spatial distributions of gas temperature on some discharge parameters arediscussed

    文摘:通過求解放電等離子體中的帶電粒子密度和能量的平衡方程、電流連續性方程以及熱傳導方程，研究了同軸射頻（ rf ）激勵co2激光器中放電混合氣體的溫度效應，分析了有關放電參數對溫度分佈的影響。
  14. Experimentally, the plasma produced by cable plasma gun ( c - gun ) and dense plasma focus ( dpf ) was measured by the laser differential interferometer system. the clear interference patterns were acquired at different time. the contour maps of line integral density and curves of radial local density at different height above nozzle were presented

    實驗上，對等離子體斷路開關中的電纜等離子體槍（ c - gun ）和等離子體焦點裝置（ dpf ）產生的等離子體進行了測量，獲得了對應不同時刻的清晰的干涉圖像，給出了線積分密度等值線圖和距噴口不同高度處的徑向密度分佈。
  15. Using above method with theories, we have computed the magnetic exchange coupling constants j values about ( vivo ) cr [ 1 ( cn ) 6 ] 2 / 3. 10 / 3h2o compound and [ mo2 ( cn ) 11 ] 5 compound, respectively. the j values are equal to - 42. 36cm - 1 and - 111. 46cm - 1, respectively

    然後，分別對這兩種配合物自旋密度分佈加以分析，兩種配合物中金屬離子上的成單電子幾乎是定域的，其自旋極化佔主導作用。
  16. With numerical calculations, the influences of device structure, material parameters and operating conditions on the distributions of the equipotential line, current density, carrier concentration, optical field and temperature profiles have been investigated, and the interactions between the correlative characteristics have been studied at the same time

    通過對這些相互關聯的特性進行數值計算，分析了器件結構、材料參數和工作條件等對等勢線分佈、注入有源區的電流密度、有源區中的載流子濃度、光場強度以及溫度分佈的影響，並研究了這些特性之間的相互影響。
  17. Distributions of electric field and carrier densities in single layer light emitting diodes

    單層有機發光二極體中電場與載流子密度的分佈
  18. The experimental results showed that firstly, the distribution of resistiveity, mobility, carrier concentration, epd and ab - epd in gaas substrate was not uniform ; secondly, the distribution of electrical parameters depended on that of epd and ab - epd ; thirdly, mesfet devices performance correlated with ab microdefects ; last, as shown by pl mapping results, it is substrate with better parameters quality that could provide more chance to fabricate good mesfet devices

    實驗結果表明， lecsi - gaas的電阻率、遷移率、載流子濃度、位錯密度和ab微缺陷分佈都不是均勻的，且電參數的分佈與ab - epd 、位錯密度分佈有關。製作的mesfet器件的性能參數分佈與ab微缺陷有明顯聯系。從plmapping測量結果可以看出材料的襯底參數好，則pl譜的強度高， pl譜均勻性也好，器件參數也好，就有可能製作出良好的器件與電路。
  19. This technique can measure the profiles of meteorological fields of the neutral atmosphere and the electron densities of the ionosphere with high precision and high vertical resolutions. it can operate all - weather with long - term stabilities and global coverage. the global - distributed occultation data will have a huge promotion on the numerical weather prediction, climate and space weather researches

    該技術可測量自地面到約800km高空的中性大氣氣象場和電離層電子密度剖面，具有全天候、長期穩定、高精度和高垂直解析度等特點;該技術提供全球分佈的資料，將對數值天氣預報、氣候研究和空間環境研究起極大的推動作用，在氣象、空間、天文以及國防領域具有廣泛的應用前景。
  20. The results show that the higher is electron density distribution, the effect is more evident. so the gradient effect must be included to measure higher density plasma in experiment

    結果表明，在等離子體電子密度分佈較高區域，梯度效應明顯，指出在實驗上測量高密度等離子體密度時必須考慮梯度效應的影響。
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