電子束光刻 的英文怎麼說

中文拼音 [diànzishùguāngkè]
電子束光刻 英文
beamwriter lithography
  • 電 : Ⅰ名詞1 （有電荷存在和電荷變化的現象） electricity 2 （電報） telegram; cable Ⅱ動詞1 （觸電） give...
  • 子 : 子Ⅰ名詞1 （兒子） son 2 （人的通稱） person 3 （古代特指有學問的男人） ancient title of respect f...
  • 束 : Ⅰ動詞1 （捆; 系） bind; tie 2 （控制; 約束）control; restrain Ⅱ量詞（用於捆在一起的東西） bundle;...
  • 光 : Ⅰ名詞1 （照耀在物體上、使人能看見物體的一種物質） light; ray 2 （景物） scenery 3 （光彩; 榮譽） ...
  • 電子 : [物理學] [電學] electron
  1. Electron-beam lithography with a novel multilevel resist structure defines the pattern.

    採用新型的多層抗蝕劑結構的電子束光刻來形成圖形。
  2. Vector scan electron beam lithography

    矢量掃描電子束光刻
  3. In this thesis, mainly by fmr, combined with moke and magnetic measurement, systematical studies have been made on the magnetic properties, especially magnetic anisotropy in epitaxial single crystalline fe ultathin films on gaas and inas substrates in polycrystalline thin films and in polycrystalline nife and nifeco patterned films of micron and submicron rectangular elements arrays

    本論文以鐵磁共振為主要研究手段，輔助以磁性和磁光測量，對外延于gaas及inas上的不同厚度的單晶fe超薄膜、不同厚度的nife多晶薄膜和電子束光刻的多晶nife和nifeco單層利三明治結構的微米及亞微米矩形單元陣列圖形薄膜的磁性，特別是磁各向異性進行了較為系統的研究。
  4. Abstract : a new method for determining proximity parameters, and in electron - beam lithography is introduced on the assumption that the point exposure spread function is composed of two gaussians. a single line is used as test pattern to determine proximity effect parameters and the normalization approach is adopted in experimental data transaction in order to eliminate the need of measuring exposure clearing dose of the resist. furthermore, the parameters acquired by this method are successfully used for proximity effect correction in electron - beam lithography on the same experimental conditions

    文摘:在電子散射能量沉積為雙高斯分佈的前提下，提出了一種提取電子束光刻中電子散射參數，和的新方法.該方法使用單線條作為測試圖形.為了避免測定光刻膠的顯影閾值，在實驗數據處理中使用歸一化方法.此外，用此方法提取的電子散射參數被成功地用於相同實驗條件下的電子束臨近效應校正
  5. Ibm says its researchers optimized the sram cell design and circuit layout to improve stability and developed several novel fabrication processes in order to make the new sram cell possible

    為了在減小內存單元的同時確保產品的安全性，該公司研究人員開發出了將電子束與光學刻蝕技術相結合的製造技術。
  6. The book is tinier than two cited in the guinness book of world records as the world ' s smallest, a copy of the new testament of the king james bible, made in 2001, and a 2002 production of anton chekhov ' s " chameleon ", the researchers said

    周三，加拿大研究人員製作出世界上最小的圖書蘿卜城的teeny ted 。這本書大小僅有0 . 07 0 . 10毫米，文字是用鎵離子光束刻在小片結晶硅上的，看得時候需要動用電子顯微鏡。
  7. This thesis work has researched the fabrication technics of photonic crystal defect waveguide with air - bridge structure and collecting waveguide ; suggested using uv - lithography and wet etching to fabricate traditional waveguide, after that, using eb - lithography and dry etching to fabricate photonic crystal holes, so can reduce the fabrication cost by a big range ; designed the moulding board, which can fabricate the air - bridge structure and is convenient for recognizing position in eb - lithography ; the structure consisted of traditional waveguides and etching grooves are fabricated on soi successfully, then an successful eb - lithography is realized on the structure, the defect waveguide collected with the traditional waveguide quite well ; used the etching grooves to do the sacrificial layer etching experiment, which grounded etching sacrificial layer by photonic crystal holes in next step

    提出採用紫外光刻工藝製作傳統波導結構之後，通過電子束曝光和干法刻蝕製作光子晶體小孔的工藝方案，大幅度減低了製作成本；設計出可形成空氣橋結構、並且適用於電子束曝光位置識別的光刻模板，在soi材料上成功製作出帶有空氣橋刻蝕預留槽以及接續光波導的結構，在該結構上成功實現了光子晶體帶隙波導的電子束曝光，帶隙波導與接續光波導位置接續良好；最後利用預留槽進行了刻蝕犧牲層的實驗，為下一步利用光子晶體小孔刻蝕犧牲層形成空氣橋結構打下了基礎。
  8. By studying and using conventional 1c process in combination with electron beam lithography ( ebl ), reactive ion etching ( rie ) and lift - off process, several efficient results are produced : semiconductor and metal nano - structures are fabricated ; the matching problem of photolithography and electron beam lithography is well solved ; the process efficiency is improved ; the process is offered for the controlled fabrication of nano - structures by repetitious process testing ; several nano - structures such as si quantum wires, si quantum dots, double quantum dot structures and tri - wire metal gate are firstly fabricated by using ebl and rie processes

    研究利用常規的硅集成電路工藝技術結合電子束光刻，反應離子刻蝕和剝離等技術制備半導體和金屬納米結構，很好地解決了普通光刻與電子束光刻的匹配問題，提高了加工效率，經過多次的工藝實驗，摸索出一套制備納米結構的工藝方法，首次用電子束光刻，反應離子刻蝕和剝離等技術制備出了多種納米結構（硅量子線、量子點，雙量子點和三叉指狀的金屬柵結構） 。
  9. The most prevalent procedure is to use photolithography or electron - beam lithography to produce a pattern in a layer of photoresist on the surface of a silicon wafer

    最常用的步驟是用光蝕刻或電子束蝕刻法，在矽晶圓表面的光阻層上製作出圖案。
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