電子束光點 的英文怎麼說

中文拼音 [diànzishùguāngdiǎn]
電子束光點 英文
beam spot
  • 電 : Ⅰ名詞1 （有電荷存在和電荷變化的現象） electricity 2 （電報） telegram; cable Ⅱ動詞1 （觸電） give...
  • 子 : 子Ⅰ名詞1 （兒子） son 2 （人的通稱） person 3 （古代特指有學問的男人） ancient title of respect f...
  • 束 : Ⅰ動詞1 （捆; 系） bind; tie 2 （控制; 約束）control; restrain Ⅱ量詞（用於捆在一起的東西） bundle;...
  • 光 : Ⅰ名詞1 （照耀在物體上、使人能看見物體的一種物質） light; ray 2 （景物） scenery 3 （光彩; 榮譽） ...
  • 點 : Ⅰ名詞1 （液體的小滴） drop （of liquid） 2 （細小的痕跡） spot; dot; speck 3 （漢字的筆畫「、」）...
  • 電子 : [物理學] [電學] electron
  1. In the system, the collimation semiconductor laser - scanned beam scanning two perpendiculars direct of one plane of the measured workpiece at the same time is made. the beams with the dimension information of two perpendiculars direct are processed by the scanning receive system, the high - speed photoelectric transition and electronic data process. two measured results of the diametric directs and ellipse tolerance, etc, parameter, of the turning workpiece on the same plane are obtained by non - contact automatic measurement

    在單向激光掃描檢測技術的基礎之上，提出了一種雙向激光掃描檢測系統，其採用激光掃描檢測技術與特殊光學系統相結合，用準直半導體激光掃描光束對被測工件徑向某一截面的兩個相互垂直方向同時掃描，經掃描接收光學系統、高速光電變換、電子學系統和微機數據處理系統，對將攜帶有垂直方向被測量信息的光束進行處理，實現了回轉體工件同一截面兩個垂直方向的徑向尺寸和橢圓度等參數的非接觸自動測量，解決了同時非接觸測量回轉體零件同一截面兩個徑向尺寸的難題，它具有高速，高精度和非接觸自動測量等特點。
  2. The effect on display characteristic made by thermal deformations of the shadow mask is comprehensively investigated. by using the electron beam distribution automatic measurement system with a micro - deflective coil, a concave spot in luminance distribution can be get. it changes its position when the shadow mask changes its form

    本文系統全面地分析了傳統蔭罩的各類熱變形對顯示屏特性的影響，利用本文研製的電子束亮度分佈自動測試系統，附加一個微偏轉磁場，使相鄰兩電子束打在同一顏色的熒光粉條，並形成一個亮度凹點，當蔭罩變形時，凹點位置作相應的位移，以此原理跟蹤測量凹點位移量，即可得到色純漂移動態變化曲線。
  3. The shadow mask is the critical component of the colour picture tube and the important component for the choice of colour, its function concentrates on the limitation of electronics bound diameter and the screening direction, the electronics bound which is sent by the electronics gun goes scanning, during the scanning process, we should guarantee every bound gathering into the small holes situated on the screen, then these bounds will point to the regularized position through the small holes on the flat mask, and then three basic colours will be produced, at the same time, those useless electronics will be blocked by the mask board

    平板蔭罩是彩色顯像管的關鍵部件之一，是一個重要選色元件，其作用是限制電子束直徑和上屏方向，由電子槍發射的電子束在偏轉磁場的作用下進行掃描，掃描過程中必須使每個電子束只能射中熒光屏上的為該束指定的那些小孔上會聚，並通過蔭罩上諸多的小孔分別打到各自對應的熒光質點上，發出三種基色（紅，綠，藍） ，而無用的電子則被蔭罩板截獲。
  4. In this paper, radiation curing and photo curing are compared. the fundamental process of electron beam ( eb ) curing is elaborated, and the features of eb cured composites are discussed. furthermore, the development of eb cured composites technology is summarized, which includes the selection of the resins suitable for eb curing, photoinitiators, active diluents and the curing mechanism. finally, a kind of low - energy eb curing technology is introduced and some innovative resins are exploited

    對輻射固化與光固化進行了比較，闡述了電子束輻射固化的基本過程，並對電子束固化復合材料的技術特點進行了概述.此外，還詳細總結了電子束固化復合材料技術的發展狀況，包括可電子束固化的樹脂體系，輻敏劑以及活性稀釋劑的選擇和應用，固化機理的研究.最後，還對復合材料的低能電子束固化技術以及新型樹脂體系的探索進行了總結
  5. By studying and using conventional 1c process in combination with electron beam lithography ( ebl ), reactive ion etching ( rie ) and lift - off process, several efficient results are produced : semiconductor and metal nano - structures are fabricated ; the matching problem of photolithography and electron beam lithography is well solved ; the process efficiency is improved ; the process is offered for the controlled fabrication of nano - structures by repetitious process testing ; several nano - structures such as si quantum wires, si quantum dots, double quantum dot structures and tri - wire metal gate are firstly fabricated by using ebl and rie processes

    研究利用常規的硅集成電路工藝技術結合電子束光刻，反應離子刻蝕和剝離等技術制備半導體和金屬納米結構，很好地解決了普通光刻與電子束光刻的匹配問題，提高了加工效率，經過多次的工藝實驗，摸索出一套制備納米結構的工藝方法，首次用電子束光刻，反應離子刻蝕和剝離等技術制備出了多種納米結構（硅量子線、量子點，雙量子點和三叉指狀的金屬柵結構） 。
  6. Due to the large exciton binding energy of 60mev, which ensures the high efficient excitonic emission at room temperature, it is regarded as one of the most promising materials for fabricating efficient ultraviolet ( uv ) and blue light emitting devices. since the first observation of the stimulated ultraviolet emission at room temperature, zno has become another hotspot in the region of uv light emitting researching

    氧化鋅在室溫條件下具有較高的激子束縛能（ 60mev ） ，保證了其在室溫下較強的激子發光，是製作紫外光電子器件的合適材料，自1997年首次發現zno室溫紫外受激發射以來， zno研究已成為繼gan之後紫外發射材料研究的又一研究熱點。
  7. The schemes which are puted forward at ' present have mainly made use of the interaction of atoms and optical - cavity, cold trapped ion, electronics spin or nuclear magnetic resonance, quantum dots manipulation and superconducting quantum interference etc.

    目前已經提出的方案主要利用了原子和光腔相互作用、冷阱束縛離子、電子或核自旋共振、量子點操縱、超導量子干涉等。
  8. Zno is a ii - vi wide bandgap semiconductor which is used for various applications such as gas sensors, bulk - acoustic - wave devices, surface - acoustic - wave devices, varistors, light emitting, light detecting devices and so on. undoped and al doped zno thin films have also been widely used in transparent conducting layers because of their higher thermal stability and good resistance against hydrogen plasma processing damage compared with ito ( sn - doped in2o3 ) films

    Zno是一種新型的直接帶隙寬禁帶半導體材料，具有六方纖鋅礦結構，較高的激子束縛能（ 60mev ） ，較低的電子誘生缺陷和閾值電壓低等優點，在uv探測器、藍紫光led和ld等光電子器件領域有巨大的應用潛景。
  9. A collinear acoustooptic - deflector of pronton - exchanged linbo3 channel wave - guide is studied. the theoretical analysis, structure design and device fabrication of linbo3 pronton - exchanged acoustooptic wave - guided deflector have been finished in this thesis. the width of wave - guide, the width, spacing, effective aperture and width of electrode of interdigital transduces have been theoretically analyzed and designed

    本論文研究了一種質子交換linbo3溝道波導共線式聲光偏轉器，其特點是利用了溝道波導的橫向約束，限制了聲波的發散和衍射效應，使得窄孔徑電極結構得以實現，從而增加了功率密度，使總的聲場驅動功率降低。
  10. Microbeam analysis - electron probe microanalysis - guidelines for qualitative point analysis by wavelength dispersive x - ray spectrometry

    微電子束分析.電子探測微觀分析.用波長色散x射線光譜測定法定性點分析指南
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