電子流擊穿 的英文怎麼說

中文拼音 [diànziliúchuān]
電子流擊穿 英文
streamer breakdown
  • : Ⅰ名詞1 (有電荷存在和電荷變化的現象) electricity 2 (電報) telegram; cable Ⅱ動詞1 (觸電) give...
  • : 子Ⅰ名詞1 (兒子) son 2 (人的通稱) person 3 (古代特指有學問的男人) ancient title of respect f...
  • : Ⅰ動1 (液體移動; 流動) flow 2 (移動不定) drift; move; wander 3 (流傳; 傳播) spread 4 (向壞...
  • 穿 : Ⅰ動詞1 (破; 透) pierce through; penetrate 2 (通過孔、隙、空地等) pass through; cross; go thro...
  • 電子 : [物理學] [電學] electron
  1. Test results indicated : with the hoist of altitude, the increase of ice amount and the rise of pollutant, the average flashover voltage reduced. the character exponent generally depends on the insulator profile, ice amount, ice state and pollution severity etc. by means of a high - speed camera, a data acquisition system and high voltage test facilities, a series of the flashover processes on ice surfaces were record. the experimental results form this study and the subsequent theoretical analyses suggested : the thermal ionization of the air in front of an arc root resulted in arc movement ; the electrostatic force had an auxiliary effect of impelling arc propagation ; the electrical

    通過對攝像機、數據採集系統及高壓試驗裝置記錄覆冰絕緣表面閃絡弧的發展過程的試驗結果進行理論分析得出:弧根周圍空氣的熱離導致了弧的發展,靜場力對弧的發展起到了加速作用,穿僅發生在閃絡最終的跳躍階段;通過測量閃絡過程中的放壓、泄漏、閃絡時間、覆冰水導率、弧長度及弧半徑等參數,得到了不同階段弧(弧起弧階段、弧發展階段及完全閃絡)的發展速度、臨界弧長度均隨覆冰水導率的增加而減小。
  2. And the results of calculation and numerical simulation indicate, without increasing the intrinsic collector - junction area of power devices, collector - combed structure helps to raise the intrinsic heat - dissipating area and base ' s perimeter, improve heat - dissipating method of each cell of the chip, enhance the distribution uniformity of junction temperature and current of each cell of the chip, reduce the thermal resistance and raise the dissipation power pd and output power p0, fairly well relax the contradiction among frequency, out - put power and dissipation power of the devices, and further improve the devices " property against second breakdown

    而計算分析和二維數值模擬分析結果表明:梳狀集結(基區)結構在不增加器件本徵集結面積的條件下,增大了器件的本徵散熱面積和基區周長,改進了每個器件單元內的散熱方式,提高了單元內結溫和分佈的均勻性,降低了器件的熱阻,增大了器件的耗散功率和輸出功率,較好地緩解了目前傳統結構中頻率與功率、功耗的矛盾,並有利於改善器件抗二次穿的性能。
  3. High leakage currents and soft reverse current - voltage characteristics are some of the detrimental effects produced by the metal atoms dissolved in the silicon matrix. gettering procedures can reduce metal contamination

    由於金屬雜質原擴散並沉積在器件的有源區,會造成諸如:反向漏較大,反向穿壓是軟穿等有害的影響。
  4. Then virtual dielectric constant method is adopted to calculate the electric field distribution with floating electrodes, and equivalent conductance rate method is adopted to calculate the electric field distribution with surface filth or local puncture in the insulator, furthermore the value scope of virtual conductance rate and equivalent conductance rate are discussed and some useful results are got. for the solution of vortex loss of silicon steel sheets concerning current transformer, the h solution has also been put forward rather than traditional a ? ( p method in order to reduce calculation load

    採用虛擬介常數法計算絕緣存在懸浮導體的場分佈,採用等效導率法計算絕緣存在表面污穢或局部穿情況下的場分佈。對虛擬介常數和等效導率的取值范圍進行了討論,得出了一些有用的結論。對于互感器硅鋼片渦損耗的計算,本文提出了不同於傳統的a -方法的h求解辦法,從而大大簡化了計算。
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