電子發射密度 的英文怎麼說

中文拼音 [diànzifāshèmìdù]
電子發射密度 英文
electron emission density
  • 電 : Ⅰ名詞1 （有電荷存在和電荷變化的現象） electricity 2 （電報） telegram; cable Ⅱ動詞1 （觸電） give...
  • 子 : 子Ⅰ名詞1 （兒子） son 2 （人的通稱） person 3 （古代特指有學問的男人） ancient title of respect f...
  • 發 : 名詞（頭發） hair
  • 射 : Ⅰ動詞1 （用推力或彈力送出） shoot; fire 2 （液體受到壓力迅速擠出） discharge in a jet 3 （放出） ...
  • 密 : Ⅰ名詞1 （秘密） secret 2 [紡織] （密度） density 3 （姓氏） a surname Ⅱ形容詞1 （距離近; 空隙小）...
  • 度 : 度動詞[書面語] （推測; 估計） surmise; estimate
  • 電子 : [物理學] [電學] electron
  1. Radiation spectrums of relativistic charged particles in a dipolar magnetic field were studied numerically in detail by using the current density of moving charged particles in this paper

    摘要從運動的荷電粒子產生的流密度出發，研究了在地球偶極磁場中運動的相對論性荷電粒子的輻射能量譜，並對其進行數值計算。
  2. With the use of finite method we have developed computer simulation software for vacuum microtriodes with wedge - shaped and cone - shaped cathode on the basis of stduying deeply the field emission theory of vacuum microelectronics. the software included field section, grid point numbering, and the calculation of electric currents, transconductance and cathode capacitance, moreover, it can simulate the properties of vacuum microeletronic with variant structures and sizes. the relationship was studied and simulated among electic properties and device structures, sizes and cathode materials etc. the optimized design of vacuum microtiode was proposed

    本文在深入研究真空微電子器件場致發射理論的基礎上，根據圓錐形、楔形陰極真空微電子三極體的不同特點，分別建立了物理和數學模型，在考慮空間電荷密度影響的前提下，以有限元法為基礎採用迭代的方法計算出真空微電子三極體內的電勢分佈情況，繪制出了等勢線、電子軌跡線，並得到了器件電學性能隨幾何參數的變化情況。
  3. The density of holes in the base is less than the density of free electrons in the emitter and collector.

    基極中空穴的密度小於發射極和集電極中自由電子的密度。
  4. Helicopters in action " is about to take you on an adventure around the world from sierra leone, where you ll participate in delivering humanitarian aid in the largest helicopter in the world, to miami for a wild ride in a black hawk helicopter intercepting drug runners. hold on while you swing through the air with five marines dangling from a rope attached to a ch - 46 flying over the atlantic and swoon as a cobra swoops low over enemy territory. try not to slip as you traverse 500, 000 - volt high wires

    全天域電影直升機行動組將會帶你參與周遊列國的歷險旅程：在非洲獅子山你會乘坐全球最大型的直升機協助人道救援工作在美國邁阿密，你會登上黑鷹直升機截擊毒販又或者與五名美國海軍陸戰隊隊員一起乘坐ch - 46直升機，飛越大西洋上空，並在半空游繩而下或乘坐眼鏡蛇直升機在敵方領空低飛或登上直升機，跳上500 ， 000伏特高壓電纜上進行維修工程或屏息靜氣，緊隨獸醫在南非乘坐直升機在離地面3米的高度，向黑犀牛發射麻醉槍或乘坐直升機跳入驚濤駭浪中參與海難救援工作。
  5. Subnanosecond millimeter relativistic backward wave oscillator, based on superradiance mechanism, was a novelty microwave device developed in last few years. the dependence of peak power on the square of the density of electron beam is almost linear

    基於超輻射機理的亞納秒毫米波微波器件是近幾年發展起來的一種新型微波器件，其輻射功率與參與束波互作用的電子束密度的平方成正比關系。
  6. In this thesis, we demonstrate the study of si - based light emitting materials and its importance in si - based photonics integration. we discussed mainly the gain, differential gain, threshold current of si - based quantum - dot laser and the dependence of threshold current on temperature from discrete energy level of three - dimension confined quantum - dot and state density distribution of 5 - function

    本文闡述了si基光發射材料的研究進展及它在硅基光電子集成中的重要地位，從三維受限量子點的分立能級和函數狀的態密度分佈入手，著重討論了si基量子點激光器的增益、微分增益、閾值電流及閾值電流的溫度特性。
  7. A new model for the growth stage of surface flashover has been developed according to the experimental results, which is based on the solid band theory. it is suggested that the electron multiplication could be attributed to two processes : one is the secondary electron emission avalanche caused by collisional ionization, the other is the micro - discharge caused by the trap centers of insulator. the trap cente

    電子倍增的過程與材料的表面態直接相關，材料微觀結構的變化和材料的表面處理都能夠導致材料表面態的變化，引起材料的表面二次電子發射系數以及材料中陷階密度和分佈的改變，從而影響了電子倍增的過程，並進一步改變或影響了沿面閃絡的發展過程。
  8. It is found that the fwm field can cause the asymmetry of electromagnetically induce transparency profile. in addition, the effect of different propagating orientations of probe field on the electromagnetically induced transparency is also discussed. in the molecular multi - level system with the perturbed superposition levels, we discuss the electromagnetically induced transparency, spontaneous emission enhancement, double dark resonance and double electromagnetically induced transparency by using the density matrix equation under weisskopf - winger approximation and dressed - state density matrix equation

    針對實際的實驗條件，考慮了一種影響量子干涉的新的因素-四波混頻場，研究了四波混頻場對雙光子探測的-型能級體系的eit的影響，發現四波混頻場能夠導致雙光子探測的eit線型的不對稱，在此基礎上，討論了不同探測場的傳播方式對eit的影響，針對分子中實際存在的包含有微擾能級的不同多能級系統，我們分別採用綴飾態繪景下的密度矩陣方程和weisskopf - wigner近似下的密度矩陣方程詳細地討論了電磁感應透明、自發輻射的干涉相消和相長、雙暗態共振和雙電磁感應透明現象。
  9. Therefore, the waveguide optical modes in the semiconductor lasers with different waveguide structures are investigated by means of optical waveguide theory. with the development of fabrication and packaging techniques, the dimensions of optoelectronic and photonic systems have become smaller and smaller. the far - field radiation models are no longer suitable for the near - field distribution of semiconductor lasers

    隨著製作工藝和封裝技術的發展，光電系統和光子系統的尺寸越來越小，半導體激光輻射的遠場模型不再適合其近場特性的分析；而且，半導體激光器可以作為近場虛擬光探針，應用於近場光學高密度存儲、納米光刻、近場光學成像以及光譜探測等領域。
  10. Static - electric field of spindt cathode was analyzed and then field emission current was simulated. the method could direct the fabrication of spindt cathode. how the aspect ration and site density of cnts effect the field enhancement factor were also analyzed

    對碳納米管的頂端電場進行了計算，分析了其長徑比和生長密度對電場增強因子的影響，進而可以對場發射實驗進行指導。
  11. Due to their high aspect ratios and small tip radii of curvature, carbon nanotubes possess marvelous electron field emission properties, viz. low turn - on voltage ( e0 ) and large emission current density ( je ), and have good potential for using as materials in electron emitters of flat panel display

    由於奈米碳管具有極高的縱橫比與極小的尖端曲率半徑，因此奈米碳管有著超乎常態的電子場發射特性，低的場發射起始電壓與大的場發射電流密度，使其為電子場發射平面顯示器的良好材料。
  12. Scandate cathode has outstanding properties of high emission at low work temperature. it ’ s the only thermionic cathode which can suffice to the development of new electronic device ’ s requirement

    含鈧擴散陰極具有極其優異的低溫高電流密度的電子發射的能力，是目前唯一能滿足新型電子器件發展要求的熱陰極材料。
  13. A collinear acoustooptic - deflector of pronton - exchanged linbo3 channel wave - guide is studied. the theoretical analysis, structure design and device fabrication of linbo3 pronton - exchanged acoustooptic wave - guided deflector have been finished in this thesis. the width of wave - guide, the width, spacing, effective aperture and width of electrode of interdigital transduces have been theoretically analyzed and designed

    本論文研究了一種質子交換linbo3溝道波導共線式聲光偏轉器，其特點是利用了溝道波導的橫向約束，限制了聲波的發散和衍射效應，使得窄孔徑電極結構得以實現，從而增加了功率密度，使總的聲場驅動功率降低。
  14. The vertical structure optimization through simulation of the new structure, low loss igbt ( lpl - igbt ) has been discussed in detail in this paper. in comparison with the prevalent igbt, lpl - igbt has not only the merit of transparent back emitter and high lifetime of carriers owned by npt - igbt but also the complex n7n + voltage sustain layer structure owned by pt - igbt. not only possesses lpl - igbt lower power loss but also the other capacities are no better than npt - igbt such as break down voltage, current capacities, safe operation area and cost

    與現有igbt相比較， lpl - igbt在結構上保留了npt - igbt中的透明發射區和高載流子壽命的本質優點，同時又具有pt - igbt中n ~ - n ~ +復合薄耐壓層的優點；在器件性能上， lpl - igbt不僅具有比npt - igbt更低的能量損耗（包括通態損耗和開關損耗） ，而且其餘性能如器件耐壓、電流密度、安全工作區以及製造成本等相對現有npt - igbt均有明顯改善。
  15. The high density dislocations behave like deep - level donors and the dislocations scattering is considerable at low temperature especially. besides, when the insb buffer layer thickness became 80nm, the roughness of insb epilayer increased. the initial stage of insb growth on gaas substrate is

    透射電子顯微鏡發現，在insb / gaas薄膜的界面處分佈有間距為3 . 5nm的失配位錯陣列，界面處的高密度位錯可體現出類似深能級施主的特性，尤其在低溫下對載流子散射更加顯著。
  16. Recently, a number of experiments and theoretical researches have showed that diamond thin films ， especially nanocrystalline diamond thin films, could emit electrons at very low fields, and be well suited for field emission cold cathode which is applied in many field emission applications, such as microwave vacuum devices and field emission displays

    近年來，國內外不斷有實驗和理論研究表明，金剛石薄膜特別是納米晶金剛石薄膜，在低的開啟電壓作用下，即可獲得很高的場致發射電流密度，具有十分優秀的場致電子發射特性，是一種理想的場致發射陰極材料。
  17. This thesis first stduies electron density imaging based on compton scattering energy spectral data

    本文從康普頓散射的能譜出發，研究物質電子密度圖像的重建問題。
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