電子的弛豫 的英文怎麼說

中文拼音 [diànzidechíyù]
電子的弛豫 英文
electronic relaxation
  • 電 : Ⅰ名詞1 （有電荷存在和電荷變化的現象） electricity 2 （電報） telegram; cable Ⅱ動詞1 （觸電） give...
  • 子 : 子Ⅰ名詞1 （兒子） son 2 （人的通稱） person 3 （古代特指有學問的男人） ancient title of respect f...
  • 的 : 4次方是 The fourth power of 2 is direction
  • 弛 : 動詞1. [書面語] （松開; 鬆懈） relax; loosen; slacken 2. （解除; 免除） fall off; fall out of use
  • 豫 : Ⅰ形容詞[書面語]1 （歡喜; 快樂） pleased 2 （安適） comfort Ⅱ名詞1 （河南的別稱） another name for...
  • 電子 : [物理學] [電學] electron
  1. By using the multi - configuration dirac - fock ( mcdf ) method, the effects of relaxation and correlation on the transition energies and probabilities of electric - dipole allowed ( el ) resonance and intercombination transitions for 2p53s3 - 2p6 in neutral neon have been systematically studied firstly. and the results of the transition energies and probabilities ( lifetimes ) in length and velocity gauge have been presented. during the calculation, in order to consider the rearrangement effects of the bound - state density and some important correlations, the asfs of transition initial - and final - states were divided according to their angular - momentum and parity and calculated, and different number of csfs were included in the expansion of asfs

    本文利用多組態dirac - fork （ mcdf ）理論方法，通過對輻射躍遷初、末態電子波函數的獨立計算以及在原子態波函數的展開中考慮不同數量的組態波函數，系統地研究了弛豫和相關效應對中性ne原子2p ~ 53s ~ （ 1 . 3 ） p _ 1 ~ o - 2p ~ 6 ~ 1s _ 0電偶極共振和復合躍遷的能量以及躍遷幾率的影響，給出了長度和速度兩種不同規范下激發態的能量和輻射壽命；以中性ne原子的研究為基礎，進一步研究了類ne等電子系列離子（ z = 11 - 18 ）較低的激發組態2p ~ 53s和基組態2p ~ 6的能級結構以及各能級間的輻射躍遷特性。
  2. The electrochemical impedance spectroscopy of nickel electrodeposition indicates that nickel electrodeposition occurs in two steps, the medium frequency inductive loop is ascribed to the relaxation of the electrode coverage by an adsorbed intermediate such as niohads, the low frequency capacitive loop may be due to the inhibition of nickel electrodeposition by adsorbed hydrogen. the mechanism and equivalent circuit of nickel electrodeposition were proposed on the basis of the analysis of electrochemical impedance spectroscopy

    不銹鋼電極上電積鎳的電化學阻抗行為表明氨絡合物體系鎳電沉積過程是二次放電過程，中頻感抗弧是由於中間吸附產物nioh _ （ ads ）的弛豫現象引起，低頻容抗弧可能是由於吸附氫原子對鎳結晶的阻滯作用引起，依據實驗結果提出了氨絡合物體系鎳電沉積的反應機理和等效電路模型。
  3. By magnetoelectric coupling, the application of an electric field or ferroelectric polarization can change one or more of the parameters governing the ma gnetic behavior of the system. correspondingly, being possible magnetostrictive effect or electron - phonon interaction, the fluctuation of spin ordering may lead to a dielectric anomaly and ferroelectric relaxation

    通過磁電耦合，鐵電有序或外電場可導致自旋的再分佈而改變系統的磁性性質，同樣由於自旋有序的漲落通過磁致伸縮或可能的電-聲子作用可導致鐵電弛豫或介電異常。
  4. The second part is about co2 lasers. we first discuss the mechanisms of population inversion, including excitations and relaxations ( electron collision excitation, resonance transition excitation impacted by excited n2 molecules, the relaxation of both the lower - upper laser levels and the lowest level of co2 )

    首先，討論了二氧化碳激光粒子數的反轉機理，包括電子碰撞激勵、激發態n2分子等共振轉換激勵過程，激光上下能級co2 （ 00 1 ， 10 0 ）以及最低能級co2 （ 0110 ）的弛豫過程等幾個方面
  5. This paper gives the general kinetics equation as well as the critical shear stress value ( or the critical press gradient value ) when the chain structure breaks down, and the method to get the structure relaxation time in the " structure capture particle " process

    給出了電流變響應過程的一般動力學控制方程以及鏈崩潰時臨界的剪切應力值（壓力梯度值） ，及俘獲粒子過程中有關結構弛豫時間的求法。
  6. According to the requirement of innovation engineering in chinese academy of sciences, the work in this thesis focused on fabrication of soi material with epitaxial layer transfer of porous silicon and study of luminescence of modified porous silicon, and we obtained the following new results : the effect of doping and anodizing condition on the properties of porous silicon, including the microstructure, ciystallinity and surface morphology, has been studied systematically. it is found that the porous silicon and substrate have the same orientation and share a coherent boundary. but at the edge of pores, the lattice relaxes, which induces xrd peak moving of porous silicon

    Soi技術和多孔硅納米發光技術研究是當今微電子與光電子研究領域的前沿課題，本文根據科學院創新工程研究工作的需要，開展了多孔硅外延層轉移eltran - soi新材料制備與改性多孔硅發光性能的研究，獲得的主要結果如下：系統研究了矽片摻雜濃度、摻雜類型和陽極氧化條件等因素對多孔硅結構、單晶性能和表面狀態的影響，發現多孔硅與襯底並不是嚴格的四方畸變，在多孔硅/硅襯底的界面上，多孔硅的晶格與襯底完全一致，但在孔的邊緣，多孔硅的晶格發生弛豫。
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