電子遷移 的英文怎麼說

中文拼音 [diànziqiānyí]
電子遷移 英文
electron migration
  • 電 : Ⅰ名詞1 （有電荷存在和電荷變化的現象） electricity 2 （電報） telegram; cable Ⅱ動詞1 （觸電） give...
  • 子 : 子Ⅰ名詞1 （兒子） son 2 （人的通稱） person 3 （古代特指有學問的男人） ancient title of respect f...
  • 遷 : Ⅰ動詞1. （遷移） move 2. （轉變） change 3. （古時指調動官職） be appointed to a certain post Ⅱ名詞（姓氏） a surname
  • 移 : Ⅰ動詞1. （移動） move; remove; shift 2. （改變; 變動） change; alter Ⅱ名詞（姓氏） a surname
  • 電子 : [物理學] [電學] electron
  • 遷移 : move; remove; migrate; shift; transport; migration; transference; removal
  1. The oxide and reduce potential and the dopant concentration. the experiments of degradation methyl blue a1so showed that the photocatalytic activity could be greatly improved with vzos - loaded tio2, maybe that loading v2o5 would accelerate the electron captured and charge transferring, change the samp1e surface hydrophilic and absorption

    納米tio _ 2 - v _ 2o _ 5復合光催化劑對次甲基藍的降解實驗表明，復合v _ 2o _ 5后tio _ 2可以加速電子捕獲和電荷遷移速率，改變了樣品表面吸附親合力，使降解效率相比純tio _ 2有很大提高。
  2. The hetrojunction device fabricated with sige material has shown great advantages over bulk sample in many aspects : higher carrier mobility, larger transconductance, stronger drive capability and hence faster circuit speed

    與體si器件相比，採用sige材料的異質結器件已經在許多方面顯示出了強大的優勢:譬如更大的載流子遷移率，更大的跨導，更強的電流驅動能力以及更快的電路速度等等。
  3. Strained - soi mosfet, which appears recently, takes both the advantages of soi ( silicon on insulator ) and sige ( silicon germanium ). it has shown advantages over bulk sample in enhanced carriers mobility, as well as higher transconductance, stronger drive capability and reduced parasitic capacitances. these properties make it a promising candidate for improving the performance of microelectronics devices

    Strained - soimosfet是最近幾年才出現的新型器件，它將soi材料和sige材料結合在一起，與傳統體硅器件相比，表現出載流子遷移率高、電流驅動能力強、跨導大、寄生效應小等優勢，特別適用於高性能、高速度、低功耗超大規模集成電路。
  4. Cataphoretic migration speed

    陽離子電泳遷移速度
  5. The dark decay of the spectral change was also studied. two recovery time constants were obtained by fitting. one is 2. 5 hours and the other is longer

    研究表明這種紫外光誘導的電荷遷移帶變化是由於eu ~ （ 3 + ）離子周圍局域環境發生的變化引起的。
  6. With the advance of semiconductor manufacturing, circuits with increasingly higher speed are being integrated at an increasingly higher density, which makes analysis and verification of power grid integrity more important. power grid integrity includes four issues, namely, ir drop analysis, ground bounce analysis, ldi / dt from the pin inductance and em analysis

    隨著超大規模集成電路集成度和工作頻率的不斷提高，電源網格完整性分析變得越來越重要，一般有四個關鍵問題： ir電壓降分析、接地點電勢上升（ groundbounce ）分析、來自引腳電感的ldi / dt分析和電子遷移率em分析。
  7. Through a series of experiments, the aging - resistance ability of hpch is increased one grade compared with the traditional materials, and the equal level with the foreign materials. the results of dry - wet circle test and quick test for chloride permeability show that the ability of efflorescence resistance of hpch is better. on the condition of 25 times circulation of dry - wet, there are a few non - development white spots just on the corner of specimens

    通過干濕循環測試及快速氯離子滲透試驗， hpch材料的抗析霜能力較強，在25次干濕循環條件下，僅在角部出現少量且不擴散的白斑，而傳統裝飾混凝土材料則出現延邊棱迅速擴散的大面積析霜；快速氯離子滲透結果表明，在同樣條件下hpch材料通過的電量（即離子遷移能力）僅為傳統材料的49 . 68 ，比國外同期產品提高25 . 34 。
  8. They act as electron - transport agents and play an important role in the electron - transport chains of respiration, photosynthesis, and the microsomal system responsible for the desaturation of fatty acids in heterotrophic bacteria

    它們作為電子傳遞物在呼吸電子遷移鏈、光合作用及微粒體系統中起重要作用，它還負責異養細菌中脂肪酸的去飽和作用。
  9. The filled skutterudite compounds attract aboard attention owing to their high mobilities and relatively large seebeck coefficients in the middle temperature range of 600 - 800k. but their thermal conductivities are very high, so the problem how to decrease their lattice thermal conductivities and improve their zt values becomes a research hotspot

    填充式skutterudite化合物由於在中溫領域（ 600 800k ）具有很高的載流子遷移率和較大的seebeck系數而引起人們的廣泛關注；但其熱導率k較高，因而如何降低晶格熱導率kl ，提高其熱電性能指數zt值已成為研究的熱點。
  10. The enhanced photoconductive effect from small amount of tnf facilitates the preparations of new organic photoconductive devices under the drive of low fields. in the fourth chapter, inclpc nanoparticles embedded in poly ( n - vinylcarbzaole ) ( pvk ) were prepared successfully by dissolving inclpc in aprotic organic solvent / lewis acid with great concentration for the formation of electron donor - acceptor complexes, i. e., the method of complexation - mediated solubilization. the fabricated inclpc nanoparticles were characterized by means of uv / vis absorption, x - ray diffraction pattern, and tem

    論文的最後一章中，我們合成了具有較好的電子傳輸性能的化合物』一二苯基四竣酸花酚亞胺（ ddp ） ；研究了其溶解性、熱穩定性、晶體結構、紅外光譜、紫外吸收光譜和蒸鍍薄膜的屬性，並用量子化學計算方法模擬其單分子的空間構型；載流子遷移率測試的結果約為ix10 「 、 m 』 v 」 』 ? s 「 』 。
  11. As the only one among nearly 200 polytypes of different crystalline sic, which has a cubic crystalline structure, p - sic is an excellent candidate for fabrication of high power devices because of its high values of saturated electron drift velocity and electron mobility in comparison with the other sic polytypes

    碳化硅是碳化硅近200種不同結晶形態中唯一的純立方結構晶體，載流子遷移率高，電子飽和漂移速度大，更適合於製造電子器件特別是電力電子器件之用。
  12. Measured results showed that the dl - a device with its structure as following ito / npb / alq / mg : ag was far more superior to sl device with the structure of ito / alq / mg : ag because the dl - a device better balanced energy band between each each layer and the mobility of carriers ( electrons and holes ), which led to the combination of carriers taking place in the bulk of emitter and avoided the excitons being eliminated by the electrodes which easily occurs in sl devices. as to the doped devices, measurements demonstrated an excellent device with its maximum brightness was 25000cd / m2

    研究結果表明， dl - a型雙層結構器件ito / npb / alq / mg : ag的各項性能指標明顯優于單層器件ito / alq / mg : ag ，因為前者有更好的載流子遷移率匹配以及能帶匹配，因此平衡了復合的載流子數目，並且能將復合區有效控制在發光層內部，有效避免了表面的大量缺陷以及電極猝滅效應，提高了載流子的復合效率，從而提高了器件的發光性能。
  13. This work was supported by the state science and technology ministry of p. r. china under the contact no. g20000683 - 06, and by the national natural science foundation of p. r. china under grant no. 60046001. gallium nitride is one of the 3rd generation semiconductor materials. from 1990 ' s, gan has attracted more and more attention and advanced rapidly, mainly due to its direct transition, wide band gap ( ~ 3. 4ev ) and other excellent characters

    Gan是直接躍遷的寬帶隙材料，具有禁帶寬度大（ 3 . 4ev ，遠大於si的1 . 12ev ，也大於sic的3 . 0ev ） ，電子漂移飽和速度高，介電常數小，導熱性能好等特點，在光電子器件和電子器件領域有著廣泛的應用前景。
  14. High electron mobility transistor hemt

    高速電子遷移率晶體管
  15. From which we can draw a conclusion that the hole mobility can experience a 15 % improvement in the strained sige layer while the electron mobility can experience a 48. 5 % improvement in the strained si layer

    通過比較實驗我們可以獲知，應變si材料中的電子遷移率相比于體si材料最大可有48 . 5 %的提高，而應變sige材料中的空穴遷移率相比于體si材料可有近15 %的提高。
  16. I - v testing of a single transistor has been carried out. the p - si film is prepared by ela, and electron mobility is calculated about 30cm2 / v

    對用激光晶化法制備的多晶硅薄膜所制備的p - si - tft單管進行了-測試，計算電子遷移率為約30cm ~ 2 v
  17. Due to the good performance of gaas devices of high frequency, high electron mobility and low noise, the high frequency devices are mostly made of gaas materials now

    由於gaas器件優良的高頻、高電子遷移率、低噪聲性能，所以現在高頻器件一般都選用gaas材料。
  18. Based on gan hemt device physics and experiment results, we found electron mobility is depend on sheet density of 2deg and proposed a new gan hemt current collapse physical model

    基於ganhemt器件物理和實驗分析測試結果，發現電子遷移率與二維電子氣濃度有關，並提出了一種gan電流崩塌效應的新物理模型。
  19. It is a good candidate for the high quality photoelectronic and microelectronic devices, such as fiber optical communication lasers, photoelectronic detectors, high electron mobility transistors and electro - optic modulators

    它是制備性能優良的光電子與微電子器件，如光纖通訊激光器、光電探測器、高電子遷移率晶體管、電光調制器等的主要選擇對象之一。
  20. After this interview, i learned about electron mobility

    通過這次訪問，我了解到電子遷移。
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