電極偏壓 的英文怎麼說
中文拼音 [diànjípiānyā]
電極偏壓
英文
electrode bias-
First, passive resistance network was selected as direct current biasing network, which offered direct voltage for base through the resistance voltage divider composed of two resistances, among them the upper resistance connected from the dc to base, the lower resistance connected from the base to ground. the collector connected with dc directly
直流偏置網路採用無源電阻網路，通過由兩個電阻組成的電阻分壓器為基極提供直流電壓，上偏電阻從電源串聯到基極，下偏電阻從基極到地，集電極直接加電。With the aid of baffle movement, a technique named masking pretreatment and the method of vacuum deposition have been used to fabricate the ag - o - cs photoemissive thin films with internal field - assisted structure for the first time. the internal field - assisted photoemission characteristics of ag - o - cs thin films show that the photoelectric sensitivity is increased when the internal electric field is applied to the thin films, which indicates that the electric field has been effectively provided to the thin films by the above - mentioned internal field - assisted structure. such an enhanced photoemission is attributed to the variations in energy - band structure of ag - o - cs thin films, and which are considered to induce the lower - energy electrons to participate in the photoemission
通過掩膜預處理和擋板轉移技術的配合，利用真空沉積方法首次制備了內場助結構ag - o - cs光電發射薄膜。 ag - o - cs薄膜內場助光電發射特性測試結果表明，該方法能夠有效地實現ag - o - cs薄膜體內電場的加載與表面電極的引出，薄膜光電靈敏度隨內場偏壓的增大而上升。 ag - o - cs薄膜在內場作用下的光電發射增強現象與薄膜體內能帶結構變化低能電子參與光電發射等物理機制有關。The effect of electrostatic force of the drive voltage on the accelerometer had been researched when the bias voltage polarity is positive - negative configuration
前人在研究驅動信號對傳感器的靜電力效應時，用偏置電壓極性為正?負配置的驅動信號進行研究。Monopole impulse substrate voltage source lbp - 6 type
單極脈沖偏壓電源lbp - 6型As the experiment results show, multiple reasons led to the offset of oscillating frequency, including diode ’ s nonlinear characteristic, fluctuation of electrical source voltage, traction of load impedance, change of environmental temperature and humidity and the design of circuit
實驗結果表明多種因素引起了振蕩頻率的偏移，包括二極體的非線性、電源電壓的波動、負載的牽引、環境溫度濕度變化以及電路板設計方面的因素等。Also, cathode bias circuits ( with bypass capacitors ) are not very successful, since for dc bias purposes, the cathode resistor presents a high dc resistance equivalent at the anode, and the quiescent point is not very stable
而且，陰極偏壓電路（帶旁路電容）也很難成功，因為直流偏壓的原因，陰極電阻在屏級上表現出很高的等效直流電阻，這樣靜態工作點很難得以穩定。However, df pre - processing is not required in a interferometer direction finder. it only makes use of the phase relations or differences of sensors disposed at different position. azimuth and elevation are caculated from the phase differences or displayed directly on a crt drived by the voltage or current from the phase differences
干涉儀測向不必進行測向信號預處理而是直接或間接求取在空間上分開的傳感器上感應電勢之間的相位關系，即干涉相位差，方位角或仰角是直接由干涉相位差計算得到，或將兩基線正交的天線陣的干涉相位差轉化為驅動電壓（電流）分別加到crt陰極顯示器的垂直偏轉線圈和水平偏轉線圈，模擬顯示出來波方位，干涉儀測向為典型的相位測向方法。The main work can be summed up as follows : firstly, we studied the thermal - field properties of vcsels, and analyzed the influences of current spreading, material parameters and operating conditions on the temperature distributions. secondly, we began with the electrode voltage and calculated the equipotential s distributions, compared the distributions of voltages and current densities in different depths of vcsels, and then studied the influences of the oxide - confining region with different position or thickness, and the different sizes of the gain - guided aperture and emitting window on the distributions of the injected current density, carrier concentration and temperature in the active region. thirdly, we realized the coupling of electricity, optical and thermal - fields, worked out the threshold voltage, calculated the distributions of the injected current density, carrier concentration and temperature under different offset voltages, and analyzed the impacts of temperature profile and carrier density on the refractive index, fermi levels and optical - field
具體工作可以概括如下：首先，研究了vcsel的熱場特性，分析了電流擴展，材料參數和工作條件對于溫度分佈的影響；其次，從電極電壓入手，計算出激光器中的等勢線分佈，並對不同深度處的電壓和電流分佈進行比較，研究了高阻區的不同位置和不同厚度、限制層和出射窗口半徑的大小對電流密度、載流子濃度和溫度分佈的影響；再次，實現了電、光、熱耦合，求出了閾值電壓，計算了不同偏置電壓下的電流密度分佈、載流子濃度分佈和熱場分佈，分析了溫度和載流子濃度變化對折射率、費米能級和光場的影響；最後，給出了考慮n - dbr和雙氧化限制層時激光器中的等勢線分佈，分析了n - dbr和雙氧化限制層對vcsel電流密度、載流子濃度、溫度和光場分佈的影響。Now we are busy fitting and testing the asipp single - ion microbeam facility. the main work in this paper are as following : testing the performances of bend magnets and magnetic quadruple, simulating the course of beam - line transport, realizing the function of count of the number of radiated ions & control of the electronic beam shutter, calculating different voltage worked on the beam shutter of different beam - line, probing into some factors that may influence the controlling precision and providing some method to solve them
本課題所做的工作主要是對偏轉磁鐵、磁四極場進行性能測試和對束線的傳輸進行模擬計算；編程實現離子記數和束開關的控制；計算出使用不同束線時束開關上所應該加上的電壓值，並且對可能影響控制精度的因素進行了一些探討，並提出相應的解決方案。Second, since input bias currents are not always small and can exhibit different polarities, source impedance levels should be carefully matched to minimize additional input bias current - induced offset voltages and increased distortion
其次，因為輸入偏置電流不一定都小，且可能體現不同的極性，而且源阻抗水平應該仔細地進行匹配，以將輸入偏置電流引起額外失調電壓和增加的畸變減到最小。Usually series mode is used in low frequency circuit while bypass mode is used in high frequency circuit, series mode micro - switch with cantilever structure is similar to an fet, when voltage is applied on gate, and the fet will be turned on between source and drain
有靜電電壓作用在梁和底面電極時，梁發生偏轉，在源極和漏極之間實現導通，常用於自控和通信系統的信號通路空氣橋旁路開關主要用於微波段信號的通路。Cathode bias resistor
陰極偏壓電阻器Next, basing on discrete electric potential, plots the distributing figure of the electic potential and electic field, and analyzes relationship between the operational characteristics of static induction transistor and the structure parameter and bias voltage
其次依據求得的離散電位值，繪制相應的電位分布圖形和電場分布圖形。最後通過對圖形的分析，解析有機靜電感應三極體的工作特性與器件結構參數和所加偏壓的關系。Effects of bias voltage polarity on reliable operation conditions of differential capacitive accelerometer with voltage feedback
偏置電壓極性對差分電容微傳感器可靠工作條件的影響分析In chapter three, the mechanism responsible for scanning probe field - induced oxidation in ambient air is attributed to an electrochemical process, i. e., anodic oxidation or anodization, after the analyses is given of a surface of a sample exposed to air. the effects of biases, tip speeds on morphology of field - induced oxidation, are introduced and deduced in the form of kinetics formula of oxidation growth
第三章首先通過分析大氣環境下掃描探針場致氧化加工的基本特性，得出掃描探針場致氧化的加工機理為電化學陽極氧化反應；引進大氣狀態下場致氧化的動力學方程，推導出偏置電壓與場致氧化物的幾何形態兩者之間的關系、掃描探針移動速度與場致氧化物的幾何形態兩者之間的關系。In the dissertation, the effects of bias voltage polarity on the measurement and the normal operation are deeply researched when the voltage polarity is positive - positive, negative - positive and negative - negative respectively. the results are compared with the ones studied by others when the voltage polarity is positive - negative. the air damping of the laterally driven microstructures is slide - film air damping
本文通過改變偏置電壓極性分別為正?正、負?正、負?負，並和偏置電壓極性為正?負配置時進行對比，深入研究了電容式傳感器在不同偏置電壓極性下，驅動信號產生的靜電力對傳感器檢測和工作性能的影響。分享友人