電著光阻 的英文怎麼說
中文拼音 [diànzhāoguāngzǔ]
電著光阻
英文
electro - deposited photoresist-
The reason to cause this phenomenon is due to the change of electric field in the blue oled to induce the probality of the carrier shifted and the hole - electron recombination zone changed, which was a possible alternative to achieve color display. 3 ) device with the structure of ito / npb / adn : balq3 / alq3 / mg : ag was fabricated. when the balq3 dopant concentration was about 25 mol %, a high performance devcie with luminous efficiency of 1. 0 lm / w, the peak of emission spectrum at 440 nm, the cie coordinate at ( 0. 18, 0. 15 ), and half lifetime of unencapsulated device about 950 hrs was achieved
導致本現象的原因是由於各有機層電場強度的變化影響了空穴和電子的隧穿幾率，從而導致載流子的復合區域發生改變而發出不同顏色的光; 3 ）制備了結構為ito / npb / adn : balq3 / alq3 / mg : ag的藍光oled ，空穴阻擋材料balq3的摻入顯著影響了oled的光電性能，當balq3的摻雜濃度為25mol %時， oled的發光效率為1 . 0lm / w ，發光光譜的峰值為440nm ，色純度為（ 0 . 18 ， 0 . 15 ） ，未封裝器件的半衰期達到了950小時; 4 ）在藍光材料adn中摻雜npb 、 balq3和tbp三種材料時，不僅改善了器件的發光亮度和色純度，而且提高了器件的發光效率和壽命。Vo _ 2 is a typical thermochromic material. with the increase of temperature, the semiconductor - to - metal transition will occur at 68 c ; with the abrupt change of vo _ 2 crystal structure, electrical resistance and optical index of refraction transmissivity and reflectivity will change, which results in great application potentials in many fields
Vo2是一種相變型金屬氧化物，隨溫度的升高，在相變溫度（ tc = 68 ）發生從低溫單斜結構向高溫四方金紅石結構的轉變，同時，伴隨著電阻率和紅外光透過率的突變。The research of patch antennas based on photonic - bandgap ( pbg ) structures is a relatively new area. the goal is to improve the performance of the patch antennas by using the special features of pbg structures. though some good research results have been obtained by scientists in the world, there still exit some problems to be solved for improving the performaces and reducing the size, weight and cost
雖然國內外已經在基底鉆孔型、地面腐蝕型、高阻抗表面型、 uc - pbg型、覆層型和軟表面型電磁（光子）晶體貼片天線等方面開展了研究，但是在這些研究中還遺留著多方面的問題有待解決，以顯著改善天線的性能指標，減少天線的體積，重量，降低天線的加工費用等。The results indicate that with increasing the thickness of fes2 thin films, the electrical conductivity, the carrier concentration and the absorption coefficient decrease
結果表明，隨著薄膜厚度的增加， fes2的電阻率升高，載流子濃度下降，在高吸收區fes2薄膜的光吸收系數也呈下降趨勢。At the same time, the rapid progress on devices requires better ohmic contact between metals and gan, for example, the short - wave ld requires specific contact resistivity lower than 10 - 4 cm2
Gan材料與金屬歐姆接觸的性能對器件有著重要的影響。低阻歐姆接觸是gan基光電子器件所必需的。In this test a new method was adopted to check and test the behaviors of structures by using optical fiber bragg grating sensors which realize the synchronous measurements with electricity - resistance gauges. the results show that optical fiber bragg grating sensors has boundless prospects for checking in civil engineering
試驗中，還採用電阻應變計和光纖布喇格光柵傳感器在加載過程中對加固構件進行同步測量，結果表明光纖布喇格光柵傳感器是應用於土木工程檢測的很有前途的新技術，有著廣泛的應用前景。分享友人