電解液層化 的英文怎麼說

中文拼音 [diànjiěyècénghuà]
電解液層化 英文
electrolyte stratification
  • 電 : Ⅰ名詞1 （有電荷存在和電荷變化的現象） electricity 2 （電報） telegram; cable Ⅱ動詞1 （觸電） give...
  • 解 : 解動詞（解送） send under guard
  • 液 : 名詞（液體） liquid; fluid; juice
  • 層 : i 量詞1 （用於重疊、積累的東西 如樓層、階層、地層） storey; tier; stratum 2 （用於可以分項分步的...
  • 電解 : electrolyze; electrolysis; electrolyzation; galvanolysis 電解銅 [冶金學] electrolytic [cathode] c...
  1. For electrodeposition by dc methods, the metals deposite uninterrupted and the particles were also embeded uninterrupted into the coatings ; for electrodeposition by pc method, the particles with biggish volume were desorbed from the coatings and returned to the electrolyte again owing to the presence of pulse interval ; for electrodeposition by prc method, the particles carried positive charges are much more easy to desorb from the coatings owing to the effecf of reverse pulse current combined with pulse interval, in addition, the reverse pulse current also could dissovle the metals, further accelerates the desorption of particles, thus the particles size embeded in the coatings by prc method is the least

    直流電沉積時，基質金屬的沉積連續進行，粒子在電極表面不間斷嵌入鍍層;單脈沖電沉積由於脈沖間歇的存在使得具有較大體積的粒子會脫附，重新回到溶液中;採用周期換向脈沖時，反向脈沖電流使表面荷正電的較大的粒子更易從電極表面脫附，同時，反向脈沖電流對基質金屬的溶解作用，也會促進粒子的脫附，因此鍍層中復合粒子尺寸最小。隨著鍍層中粒子復合量的增加，三種鍍層的晶粒都明顯細化，說明al _ 2o _ 3的存在阻止了晶粒的長大，提高了電沉積過程中晶核的形成速率。
  2. The chemical compositions of sei films formed on the interfaces of a3000 samples in different electrolytes during the first charging process are mainly li2co3 and lioco2r, but their textures are different. the sei films formed in ec - based electrolytes are thin and compact, which can prevent the solvated lithium ions from cointercalating between two graphene layers of the graphite crystallites effectively, therefore samples a3000 have small irreversible capacities and good compatibilities with this kinds of electrolytes. however, the sei films formed in pc - based electrolytes are thick but defective, which could not effectively prevent solvated lithium ions from intercalation, therefore sample a3000 shows large irreversible capacities in pc - based electrolytes and bad compatibilities with this kind of electrolytes

    A _ （ 3000 ）試樣在六種不同的電解液中，首次充電過程中所形成的sei膜，其化學組分均為碳酸鋰和烷基碳酸鋰，但在ec基電解液中形成的sei膜薄而緻密，可以有效地阻止溶劑化鋰離子插入石墨層間，不可逆容量少，表現出與a _ （ 3000 ）試樣有良好的相容性；在pc基電解液中形成的sei膜厚，且有缺陷，不能有效地阻止溶劑化鋰離子嵌入試樣中石墨微晶的層間，不可逆容量大，與a _ （ 3000 ）試樣的相容性極差。
  3. Meanwhile, fundamental principles about electroless tin plating by reducing agent and disproportionation reaction were explained. function of every component in the bath was explained that complexing agent can effectively change the potential of copper and tin, and accelerate the beginning of replacement reaction favorably ; reducing agent can increase the rate of chemical reaction and has the effect of promoting reaction dynamics too ; antioxidant can effectively prevent sn2 + in the bath from being oxidated ; additive agent a can improve the stability of the bath ; additive agent b has such effects as refining and brightening for the tin deposits, and it enlarges the range of brightening section ; additive agent c used as leveling agent can not only make the depostis level off, but also improve the dispersive ability of the bath ; surface - active agent can solve bubble problem which gathered on the surface of the deposits, and improve the surface quality of the deposits and the bath stability

    闡述了鍍液中各組分的作用：絡合劑能有效地改變銅、錫的電位，促使初期的置換反應順利進行；還原劑能加快化學反應速度，對反應動力學有積極的促進作用；抗氧化劑能有效地防止鍍液中sn ~ （ 2 + ）的氧化；添加劑a能提高鍍液的穩定性，添加劑b對鍍層能有細化和光亮作用，擴大了鍍層光亮區的范圍；添加劑c作為平滑劑，不僅能增強鍍層表面的平整性，而且能提高鍍液的分散能力；表面活性劑較好地解決了化學鍍過程中汽泡在鍍件表面聚集的問題，提高了鍍層的表面質量和鍍液的穩定性。
  4. The laps uses photo excitation of the semiconductor to probe the surface potential at the insulator - electrolyte interface. the semiconductor is addressed by a modulated flux of ( infrared ) photons : this flux results in the generation of hole - electron pairs in the semiconductor

    Laps的原理是基於電場效應使器件對絕緣層與電解質溶液間界面電位變化敏感，其結構類似於eis （電解質?絕緣層?半導體）結構，它的特殊之處在於用光對半導體進行照射引起電解質?絕緣層界面間電位的變化。
  5. The results were shown as follows : ( 1 ) the electrolyte components for electroplating pb - sn coatings in fluoborate system were studied. the effects of concentrations of main salt, dissociative acid, inhibitor, antioxidation and surfactant on the cathode polarization curves of electroplating pb, sn and pb - sn alloys and contents of alloying element were investigated systematically. the scale of current density was confirmed using hull cell

    （ 1 ）研究了氟硼酸體系電鍍pb - sn合金鍍層的電解液組成，詳細討論了主鹽濃度、游離酸濃度以及阻化劑、抗氧化劑、表面活性劑等添加劑對氟硼酸體系電沉積pb 、 sn及pb - sn合金陰極極化曲線的影響和對pb - sn合金鍍層中合金含量的影響。
  6. Under these conditions the fibrinolytic activity of the supernatant can reach 820 urokinase units per milliliter broth. ba - dfe was purified from the supernatant of b. amyloiquefaciens dc - 4 culture broth by ammonium sulfate precipitation, ion - exchange chromatography on cm - and deae - sepharose fast flow, hydrophobic interaction chromatography on phenyl sepharose 6 fast flow and gel filtration on sephadex g - 50. the purified enzyme displayed thermophilic, hydrophilic and strong fibrinolytic activity

    通過硫酸銨分級沉澱、 cm - sepharosefastflow和deae - sepharosefastflow離子交換層析、 phenylsepharose6fastflow疏水層析和sephadexg - 50凝膠過濾等方法，從解澱粉芽孢桿菌dc - 4的發酵液中分離純化出電泳純的ba - dfe 。
  7. Poly - crystallization silicon thin film transistor ( p - si tft ) addressing liquid crystal display has been currently the research and development focus in the field of flat panel displays, as it is most feasible approach to high resolution, high integration and low power consumption as a result of its high aperture ration. there are less number interface of the crystal grain, lower metal impurity and higher mobility in the electric current director, the milc p - si tft has been the research focus in the fields of amlcd, projection display, oled etc. there are vast dangling bonds and bug

    多晶硅薄膜晶體管（ p - sitft ）液晶顯示器可以實現高解析度、高集成度、同時有效降低顯示器的功耗，因而成為目前平板顯示領域主要研究方向;而以橫向晶化多晶硅為有源層的tft由於在導電方向有更少的晶界、更低的金屬雜質污染、更高的載流子遷移率而成為目前有源矩陣液晶顯示領域、投影顯示、 oled顯示等領域研究的熱點。
  8. The effects of the parameters of alternating electric field on the growth of passive film and the dissolution of alloying element in stainless steel were studied by analysis of the composition of passive film and the bath solution

    通過對鈍化膜層和溶液中金屬離子的含量分析，研究了不同交變電場參數對電極中各金屬元素的溶解和沉積。
  9. In this paper, the ceramic coatings were prepared in situ on ti - 6al - 4v alloy by micro - plasma oxidation ( mpo ). the phase composition, microstructure and corrosion resistance of the ceramic coatings were studied in detail and the technology of corrosion resistant coatings was optimized. the dissolution of the substrate and the changes of the elements in the electrolyte during the mpo process were studied to discuss the growing characters and the structure of the ceramic coatings

    本文通過微等離子體氧化（ mpo ）方法在ti - 6al - 4v鈦合金表面原位生長陶瓷膜，系統地研究陶瓷膜的相組成、微觀結構及膜層耐腐蝕性能，並優化耐蝕性陶瓷膜層制備工藝;分析基體在mpo過程中的溶解現象和電解液中離子濃度變化特點，探討電極表面陶瓷膜層生長規律和結構特點;研究膜層的等效電路、膜層結構與耐腐蝕性能的關系，並對優化工藝條件下制備的陶瓷膜層進行進一步的耐腐蝕性能測試和耐腐蝕機制研究。
  10. The brine shrimp he was prepared and purified by 67 % ammonium sulfate precipitation, deae - sepharose fast flow ion - exchange chromatography, and sephacryl column gel - filtration, and its biochemical and enzymological properties were identified in this study. it was found that the deduced molecular weight of he in sds - page is about 98. 5 kda, and its proteolytic activity was optimized at ph of 7. 5 - 8. 5 and at temperature of 40, respectively

    我們利用67硫酸銨沉澱、 deae - sepharosefastflow陰離子交換柱層析和sephacryl凝膠過濾柱層析，並以酪蛋白為其蛋白酶水解活性的檢測底物、以卵膜為其卵殼裂解活性的特異性底物，從鹵蟲胚胎孵化液中分離純化出了鹵蟲的孵化酶分子，其在sds - page電泳中的分子量約為98 . 5kda 。
  11. The crude cellulases from liquid fermentation of b - 6 and ass. 3711 were isolated and purified by ( nh4 ) so4 precipitation, sephadex g - 100 and deae - sepharose cl 6b column chromatography. the cmcase components were purified and some of their physical and chemical properties were studied

    本文將液體發酵的酶液經硫酸銨分級沉澱、柱層析后得電泳純cmcase組分，並對as3 . 3711和b - 6來源的cmcase酶解動力學和理化性質作了比較研究。
  12. The transfer of the carrier in photoconductor is anisotropy owing to the column structure of the film is anisotropy. on the basis of the new concept suggested in this paper, the maximum diffusion length in the lateral direction of the photo - carrier in the photoconductor ( which is related to the resolution of lclv directly ) as function of conductivities of both in lateral and normal directions in the film can be obtained as the expression as following. the nc - si / a - si : h photoconductor of lclv deposited and crystallized at low temperature of exactly 250 c stack column structure by al inducing a - si : h

    本文根據柱狀結構存在各向異性的特點，並根據半導體物理知識，推出光導層光生載流子橫向最大擴散長度（該擴散長度與液晶光閥光導層解析度直接相關）與薄膜橫向和縱向電導率關系的表達式為：由於a - si ： h在al金屬的誘導作用下在不高於250的溫度下即開始晶化，本文對用金屬al誘導非晶硅晶化制備的nc - si a - si ： h薄膜進行研究。
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