靶電流 的英文怎麼說

中文拼音 [bǎdiànliú]
靶電流 英文
target current
  • 靶 : 1. （射擊的目標） target 2. （轡革; 韁繩） bridle; halter; reins
  • 電 : Ⅰ名詞1 （有電荷存在和電荷變化的現象） electricity 2 （電報） telegram; cable Ⅱ動詞1 （觸電） give...
  • 流 : Ⅰ動1 （液體移動; 流動） flow 2 （移動不定） drift; move; wander 3 （流傳; 傳播） spread 4 （向壞...
  • 電流 : current; galvanic current; electric current; electricity; current flow電流保護裝置 current protec...
  1. Firstly, the tio2 thin films are deposited by dc reactive magnetron sputtering apparatus, and characterlized by n & k analyzer1200, x - ray diffraction spectroscopy ( xrd ), scanning electronic microscopy ( sem ), alpha - step500. and it was analyzed that the effect on performance and structure of films with the change of argon flow, total gas pressure, the substrate - to - target distance and temperature

    第一、應用穩定的直流磁控濺射設備制備tio2減反射薄膜並通過n & kanalyzer1200薄膜光學分析儀、 x射線衍射分析（ xrd ） 、掃描電子顯微鏡（ sem ） 、 alpha - step500型臺階儀等儀器對薄膜進行表徵，分析氧分壓、總氣壓、工作溫度、靶基距等制備工藝參數對薄膜性能結構的影響。
  2. It make possible for the system to set and to change source current ( which is proportional to evaporation rate from the ms source ) during coating process

    在鍍膜過程中，保證了每個磁控濺射靶上電流的穩定控制和精確調整。
  3. Many measures were adopted to decrease bombard in order to improve the solar cells propertivity, such as decreasing target voltage, increasing target distance, accelerating the movement of the substrate. by optimizing the experimental conditions, short - circuit current was increased by 3. 7ma / cm2, the conversion efficiency was increased by 2 %, the stability was improved

    在硅薄膜電池的zno ： al al背反射電極應用方面，通過減小靶電壓、適當增加靶距和基片的運行速度來減小對電池的轟擊，改善電池性能，通過優化實驗條件，使電池的短路電流提升了3 . 7ma cm ~ 2 ，效率增加了2 ，穩定性得到改善。
  4. The proposition of the scheme for the electric power : according to the request, we imagine pull scheme have : generator - transfer and is fitted rapidly by direct current - direct current machine - target car ; generator - exchange and is adjusted and fitted rapidly - exchange the electrical machinery - the target car

    電力拖動方案的提出及確定：根據陸軍指揮學院元氏分院提出的要求，設想的拖動方案有：發電機-直流調速裝置-直流電機-靶車；發電機-交流調速裝置-交流電機-靶車。
  5. A method for measuring electron beam energy spectrum of linear accelerator with transducer of a multi - strip metel target is introduced. its principle, circuit and design are discussed

    摘要介紹了用一種多條金屬靶傳感器測量直線加速器電子束流能譜的方法，主要討論其原理和電路設計時應考慮的問題。
  6. As the partial pressure of o2 increases the cathode voltage of the target increases in order to maintain the same current intensity and the sedimentation rate gradually decreases

    氧氣分壓的增大，維持同樣濺射電流強度的靶陰極電壓增大，薄膜的沉積速率逐漸減小。
  7. To satisfy the requirements of the wide applications of ito thin films, a lot of research efforts have been made on the preparation of ito films, and various manufacturing techniques such as evaporation, reactive electron evaporation d. c. and r. f. magnetron sputtering reactive thermal deposition and sol - gel process have been successfully developed

    為了滿足光電產業界對ito薄膜的強大需求， ito粉體的制備生產技術和薄膜的形成取得了很大的成效。目前，工業界主要是先將ito粉製成靶材，再利用直流磁控濺射工藝，在材料的表面形成ito薄膜。
  8. This machine adopts japanese pro - face touch screen and mitsubishi plc control technology. in addition, it is set with automatic gear - shifting vacuum gauge, a three - flow controller, side - installed heating tube, computer pid automatic temperature control, and two sets of flat magnetic controlled target, contra - variant magnetic - controlled power source, and contra - variant bias power with easy operation and top grade film layer. they are widely used in decorative film layer, and compound film layer in plating

    該設備採用日本pro - face觸摸屏和三菱plc集中控制裝有電腦自動換檔真空計，三路流量控制器，邊裝式加熱管，電腦pid自動控溫，配備兩套邊裝式平面磁控靶，逆變式磁控電源和逆變式偏壓電源，操作簡單，膜層細膩，廣泛適用於鍍制各種裝飾膜層和復合膜層。
  9. During the inspection by afm and sem, we found that the surfaces morphology of samples was even and smooth, the surface roughness was small. the films were composed of some excellent columnar crystallites. the xps results were found that zn existed only in the oxidized state and the concentration of al was less and the presence of loosely bound oxygen on the surface of azo thin films was reduced after ar + etching

    由以上對azo薄膜的組織結構和光電性質的研究，我們得到了用直流反應磁控濺射法制備azo薄膜的最佳工藝條件為:氧氬比0 . 3 / 27 ，襯底溫度200 ，工作壓強5pa ，靶基距7 . 5cm ，功率58w ，退火溫度400 。
  10. At last an experiment x - ray source equipment was constructed using cnts as cathode. the field emission of cnts was measured and cu " ka spectrum was detected. those implied that practical miniature x - ray source could be accomplished

    為了驗證場發射陰極x射線源的可行性，實驗上以碳納米材料為陰極，測得了其場發射電流曲線和銅靶的k _譜線，表明完全可以採用碳納米管製造微型x光源。
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