頻大 的英文怎麼說

中文拼音 [bīndà]
頻大 英文
low frequency amplification
  • 頻 : Ⅰ形容詞（次數多） frequent Ⅱ副詞（屢次） frequently; repeatedly Ⅲ名詞1 [物理學] （物體每秒鐘振動...
  1. The low - frequency and high - power projector have became the primary candidate of sonar system application since the early 1980s. among them, the flextensional transducers are the low - frequency and high - power projector applied the most widely and the most ideally

    自從八十年代早期，低頻大功率發射換能器已成為聲納應用的首選目標，其中，彎張換能器是應用得最普遍、最理想的低頻、大功率換能器。
  2. The relative exploration methods include : tem, csamt, seismic prospecting for metal deposits, geophysical prospecting in well, deep penetrating geochemical exploration, high resolution magnetic, and high resolution gravitational exploration

    相關的找礦技術包括時間域瞬變電磁法（ tem ） 、可控源音頻大地電磁法（ csamt ） 、金屬礦地震方法、井中物探方法、深穿透地球化學方法、高精度磁法、高精度重力等。
  3. Silicon carbide is becoming the most promising semiconductor material for high temperature, high frequency and high power devices because of its superior properties such as wide band gap, high breakdown field, high electronics saturation drift velocity, and high thermal conductivity

    Sic材料由於具有寬禁帶、高臨界擊穿電場、高飽和電子漂移速度、較大的熱導率等優良特性，因此成為製作高溫、高頻、大功率器件的理想半導體材料。
  4. Featured by wide band gap, high breakage electric field, high electron mobility, low dielectric constant, strong irradiation proof and excellent chemical stability, silicon carbide ( sic ), viewed as one of the most promising wide band gap semiconductors, is widely utilized in optoelectronic devices, high frequency and large power, high temperature electronic devices

    被譽為最有潛力的寬禁帶半導體材料一sic ，因其具有禁帶寬度大、擊穿電場高、熱導率大、電子飽和漂移速度高、介電常數小、抗輻射能力強、良好的化學穩定性等優異的特性，被廣泛地應用於光電器件、高頻大功率、高溫電子器件。
  5. The results showed conversion loss less than 11. 2db and image rejection ratio more than 20db over 4ghz rf bandwidth, when if is 70 mhz fixed

    通過測試，當中頻固定在70mhz ，在射頻大於4ghz帶寬內，變頻損耗小於11 . 2db ，鏡頻抑制度大於20db 。
  6. Research on the fault detection system for high - power rf equipments

    射頻大功率設備故障檢測系統的實現方案
  7. High - frequency and high - current measurement device

    高頻大電流測定裝置
  8. Galloping is a low frequency, large amplitude, wind induced vibration of high voltage overhead transmission line

    高壓架空輸電線路舞動是覆冰導線在風的作用下發生的一種低頻大幅度振動。
  9. The experiment verified the validity that push - pull class - e amplifier is more suitable for high frequency high - power inverter

    通過實驗對比，推挽式雙e類放大器更適合高頻大功率的開發研製。
  10. Based on the examples of controlled source audio - frequency magnetotellurics application, the paper discuses the problems of electromagnetic sounding in deep geothermal investigation

    摘要以可控源音頻大地電磁測深應用實例，討論電磁測深方法在深部地熱資源調查中的應用問題。
  11. Technical rules of control source audio magnetotelluric exploration

    可控源聲頻大地電磁法勘探技術規程
  12. Because there are a lot of bugs, such as low working frequency, big switch stress, difficult increasing the discharge power, difficulty to design magnetic components and un - reliable control system, in the high power and middle - frequency supply for ozonizer in hunan yuanchao company, the ozonier markets is shrinking

    本課題是結合某廠1kg / h級的中頻大功率串聯諧振式臭氧電源工作在容性工況下的條件進行開發研究的，作者作為主要研究人員參與了該電源的研發工作。
  13. Exemplified by the application of controlled source audio - frequency magnetotelluric sounding, this paper discusses the deep and periphery prospecting work with the resistivity sounding technique in the bajiazi lead and zinc mine of liaoning province

    摘要以可控源音頻大地電磁測深方法應用為例，討論遼寧省八家子鉛鋅礦深部及外圍電阻率測深找礦問題。
  14. As a wide bandgap semiconductor material, silicon carbide is an exellent material with superior thermal, electrical, mechanical and chemical properties for the fabrication of high temperature, high power, high frequency and radiation hardening electronic devices

    Sic是一種寬帶隙半導體材料、第三代半導體材料的代表，是製造高溫、高頻、大功率、抗輻照等半導體器件的優選材料，又被稱為極端電子學材料，在微電子學領域具有廣闊的應用前景。
  15. 3. scan frequency is over 200hz : using over 200hz frame scan frequency will have good vision effect

    3掃描場頻大於200赫茲：使用幀掃描頻率200hz以上，有很好的視覺效果，人肉眼幾乎
  16. As for frequency domain, tirls includes mainly 3 frequency bands : ( 1 ) high frequency band with period less than 1 year, which is relative to weather ; ( 2 ) mid frequency band with predominant period 1 year, relative to sun, plant and season ; ( 3 ) low frequency band with period more than 1 year, relative to the crustal activity and long period variation of atmosphere temperature

    從頻率域看，地表熱紅外輻射主要存在3種頻段： （ l ）高頻，周期小於1年的天氣變化； （ 2 ）中頻，以1年周期為主的太陽、植被與季節變化； （ 3 ）低頻，大於1年周期的大氣變化的長周期成份，地殼緩慢的運動引起的熱輻射變化亦屬于長周期變化。
  17. The main contents and conclusions are as follows : 1. the dynamic pressure on the original riverbed and the scour hole are measured. the results show that the characteristics of dynamic pressure in the scour hole are the same as that on the original riverbed

    表明在基巖沖刷過程中以及沖坑穩定后，射流沖擊區的脈動壓強與沖坑形成前一樣，都是以低頻大振幅為主，說明在沖刷坑形成后，射流沖擊區水流與無沖坑時一樣，都是大尺度渦不斷破碎和小尺度渦不斷生成的過程。
  18. In this paper, aimed at the problems existed in theoretical analysis and application of ftm, the discrete fourier transform method is applied to analyze the traditional ftm ( tftm ). and computer simulation is applied. the main propose is to solve the problem, such as frequency shifting, selection of carrier frequency big or small and selection of filter window size. considering the feature of double - exposure holographic interferometry, we propose a modified ftm ( mftm )

    針對二次曝光數字全息干涉術中ftm存在的理論缺陷和具體應用到二次曝光全息干涉計量中存在的問題，本文從離散傅立葉變換的角度對傳統的傅立葉變換法（ tftm ）進行了理論分析和計算機模擬計算，並重點致力於解決ftm中的移頻問題、載頻大小的選擇以及濾波窗口大小的選擇等關鍵問題，結合二次曝光全息干涉的特點提出了改進的傅立葉變換法（ mftm ） 。
  19. Detail specification for electronic components. type 3da98 npn silicon high - frequency power transistor

    電子元器件詳細規范. 3da98型npn硅高頻大功率晶體管
  20. Due to its intrinsic merits, such as wide band gap, high electron saturated drift velocity, high melting point, good coefficient of thermal conductivity, anti - radiation and good chemical stability, gallium nitride as a direct band gap semiconductor has become the promising material for the application of short - wave light - emitting devices and high temperature, high frequency and high power electronic devices

    Gan是直接帶隙半導體材料，以其禁帶寬度大、電子飽和漂移速度大、熔點高、熱導率高、抗輻射能力強和化學穩定性好等優點成為製造短波長光發射器件及高溫、高頻、大功率電子器件的理想材料。
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