類質同晶型體 的英文怎麼說
中文拼音 [lèizhítóngjīngxíngtǐ]
類質同晶型體
英文
isomorph-
And apatite. by these analyses and comparison with general granite both in china and the world and with the granite in other au or cu belt in china, the characteristics of the granite in this area are concluded as follows. it belongs to magnetite - i or syntectic granite and has crust - mantle mixed characteristics ; it was formed mainly by crystallization differentiation of melting magma and multiphase varied intrusion ; the degree of differentiation evolvement is not high ; the granite and its enclaves p. re congenetic ; the range of temperature is about 500 - 700, the range of pressure is about 2. 50 gpa - 4. 35 gpa, and the range of oxygen fugacity ( lg fo2 ) is - 15. 53 - - 14. 00 ; most granite bodies formed before the collision of plates, and few formed after the collision of plates
通過對測試數據的分析與綜合研究，並同中國和世界一般花崗巖類以及中國主要金、銅成礦巖體的花崗巖類進行對比，得出本區花崗巖類巖石具有以下特徵：屬磁鐵礦-型或同熔型花崗巖，其巖漿物質具殼幔混源特徵：主要由熔融態巖漿經結晶分異作用，通過多期變速上侵而形成；其分異演化程度較低；寄主巖基和包體具有同源性；巖石的形成溫度范圍約為500 - 700 ，壓力大約為2 . 50gpa - 4 . 35gpa ，氧逸度值1gfo _ 2為- 15 . 53 ? 14 . 00 ；該巖帶主要形成於板塊碰撞前消減的活動板塊邊緣期，為燕山至喜馬拉雅早期的大陸邊緣火山弧環境的產物。In this paper, they are set forth at first that the kinds of computer - simulation of electronic devices, the development and the requirements of mosfet ' s model and the way of gain the models " parameters, the dc models have been bui it in chapter 2 and the models of big signals have been deduced in chapter 3, they are different from the equivalent circuit models in the traditional software pspice that they come from the numer i ca i - s i mu i at i on wh i ch is based on the essence equat i on, so the precision of simulation is enhanced ? mosfet ' s small signal models of low frequency, intermediate frequency and high frequency have been built in chapter 4 and chapter 5, although the equivalent circuit models in pspice are used for reference to bui id them, they have their own characteristics which are analyzed at a i i kinds of situations, so that the simulation software for mosfet can be written according them and it i s a i so benef i c i a i for us to catch the gen i us character i st i cs of mosfet and to d esign all kinds of applicable devices the correctness of the models is simply proved in chapter 6
本文首先介紹了電子器件計算機模擬的分類、 mosfet的建模發展動態、對器件模型的要求以及模型參數的提取方法。在第二章中建立了mos晶體管在直流端電壓條件下的工作模型；第三章推導了mosfet的大信號模型，這兩類模型不同於傳統模擬軟體例如pspice中的等效電路模型，而是從模型方程出發，採用數值模擬的方法，提高了模擬的精度。第四章和第五章分別建立了mos晶體管低頻、中頻、高頻的小信號模型，雖然借鑒了pspice模擬軟體中用等效電路模型的方法，但是本文分別討論了準靜態和非準靜態時器件的本徵部分以及包含非本徵部分工作于低頻、中頻和高頻條件時的模型，可以根據這些模型編寫相應的模擬軟體，這樣在做器件的模擬分析與器件設計的時候，就可以利用模擬軟體逐步深入地分析器件在不同的條件下和器件的不同部分在工作時的各種小信號特性，有利於抓住器件工作的本質特性，設計出符合要求的各類通用和特殊器件。Liquid crystal crown ether is a kind of compound, which remains the liquid crystal property when the crown ether ring link or insert to the molecular structure of liquid crystalline compound. it is in fine - order structure and unite its function and character into together. so it is a kind of novel compound with the characterstic of liquid crystal and the selecting of the crown ether
液晶冠醚是一類將冠醚環插入或連接在具有液晶性的分子結構中並保持液晶性質的化合物，這種化合物是一類結構有序且功能特性一體化的體系，它是一類既有液晶特性又有冠醚選擇配位功能的新型化合物，它們在分子結構、性能和應用功能等方面都與通常的液晶化合物不同。The maximal power outputs of 37. 0 mw / cm2 and 30. 0 mw / cm2 for the p - and n - type laminated materials respectively at the temperature difference 490 have been experimentally obtained, which are about 2. 5 and 3. 0 times those of - fesi2. chemical analyses show that the interface failure between the bridge alloy and the semiconductor bi2te3 results mainly from the eutectic mixtures with low melting point and brittle compounds formed during welding and long time annealing at 190. it is found that the electrical properties of a laminated structure are mainly controlled by the wettability of the bridge alloy on the semiconductor surface
發現： 1 ）疊層材料具有明顯優于均質材料的熱電性能，在490溫差下， p -型和n -型疊層材料的最大輸出功率分別達到37 . 0和30 . 0 （ mw / cm ~ 2 ） ，是同類型均質- fesi _ 2的2 . 5和3倍； 2 ）在焊接過程和190長時間退火處理過程中，焊接過渡層合金和基體半導體（特別是bi _ 2te _ 3 ）之間存在明顯的元素相互擴散，從而在過渡層中形成一些低熔點共晶體和脆性化合物，這是導致疊層材料破壞的主要原因； 3 ）焊接過渡層合金與半導體基體之間的潤濕性是影響界面層電性能的主要因素。In this research, nanosize tio2 were prepared by wet chemistry method. the effects of technical condition, ion doping and noble metal modification on crystal structure of ti02, crystal size and its distribution, spectrum and photocatalytic activity were studied in order to prepare nanosize tio2 of high photocatalytic activity. effect factors such as temperature in photocatalytic process were also studied
本工作選用濕化學方法制備納米tio _ 2光催化劑，研究制備工藝條件、離子摻雜和貴金屬沉積等對納米tio _ 2晶體類型、粒徑大小及分佈，光譜性質和光催活性的影響規律，以期研製出具有高光催化活性的納米tio _ 2光催化劑；同時研究光催化過程中光催化環境溫度等因素對光催化活性的影響規律。分享友人