馳豫 的英文怎麼說

中文拼音 [chíyù]
馳豫 英文
relaxation
  • 馳 : Ⅰ動詞1 （車馬等或使車馬等跑得很快） speed; gallop 2 （傳播） spread 3 [書面語] （心神嚮往） turn ...
  • 豫 : Ⅰ形容詞[書面語]1 （歡喜; 快樂） pleased 2 （安適） comfort Ⅱ名詞1 （河南的別稱） another name for...
  1. Using the multi - configuration dirac - fock method ( mcdf ), we studied the characteristic of the decay processes of the 4d core excited states of csiv, the low - lying excitation structure of super - heavy element bohrium ( z = 107 ) and the x - ray spectra of the 3d - 4f transitions of highly charged xenon ions in details in this work, by including the electron correlation and the relaxation effects systematically

    本論文運用mcdf方法，通過系統考慮電子相關效應和馳豫效應，分別研究了cs離子的4d內殼層激發態衰變動力學特性，超重元素bh （ z = 107 ）的低激發態結構以及高離化態氙離子的3d - 4f躍遷產生的x射線譜的結構等問題。
  2. This special type of material may possess optical constants that are different from those at the fully relaxed material

    這種特別的材料類型可能會擁有與完全馳豫材料不同光學常數。
  3. But for the furnace cooling samples, all samples have another damping peak about at 3 00 ( called tp2 peak ). the peak is not of relaxation model, the peak temperature does not vary with frequencies

    除爐冷試樣外，其餘各熱處理態試樣均在300左右，有一內耗峰幾2峰，此內耗峰無馳豫特性。頻率變化，內耗峰的位置不變，對同一熱處理態試樣內耗峰位置不變。
  4. It is found that the current amplification coefficient strongly depends on the spin polarization of the electrons injected from the emitter to the base, the spin relaxation time and the width of the base

    自旋晶體管中的電流放大系數主要取決于注入基區的自旋極化電子的極化程度，基區中自旋的馳豫時間及基區的寬度。
  5. The la - modified thin films with 220nm thickness exhibited diffuse phase transition through the testing of temperature dependence of dielectric permittivity. the abnormal dielectric phenomenon was explained according to the observed relaxor behavior. the influence of post - annealing on the properties of the ferroelectric thin - film capacitors is another component of this thesis

    在薄膜的介電性質方面，通過對介電溫譜的測試，發現對于厚度薄至220nm的薄膜，摻鑭后同樣會導致馳豫型的鐵電相變，並依此解釋了介電常數的「反常」現象。
  6. Dynamic analysis of polar microregions in therelaxor ferr oelectrics

    馳豫鐵電體中極化微區動力學分析
  7. It is explained by cross relaxation of the ( 2h11 / 2, 4s3 / 2 ) states

    這主要是由於交叉馳豫作用的結果。
  8. Longitudinal relaxation time

    馳豫時間
  9. It ' s generally believed that the qgp, if formed in the relativistic heavy ion collisions, be in a thermal non - equilibrium state during initial stage and then evaluates into equilibrium state

    通常認為在相對論重離子碰撞中生成的qgp首先是處于非平衡態，它要經過一個由非平衡態向平衡態演化的馳豫過程。
  10. All the heat treated samples have a damping peak over the range of 150 and 260 ( called tp peak ). by analyzing, the peak is a dislocation peak and it can be explained with g - l theory

    分析表明，此峰為位錯峰，因為該峰從峰的位置，頻率馳豫特性，以及阻尼性能測量的應變振幅相關性，都與g一l理論符合的很好。
  11. The bulk electronic properties of gaas have been described both by the second - neighbour tight - binding formalism for ( 112 ), ( 113 ) ( 114 ) surface and nearest neighbour tight - binding sp3s * for ( 2 5 11 ) surface

    再構后，不考慮表面原子的馳豫變化， gaas （ 2511 ）表面表面態的變化主要表現在o . gev ~ 1 . oev的一些表面態完全消失。
  12. When the coupling rabi frequency c satisfies the condition of c > 1 / 2 3, the transient process is a relaxation oscillation behavior. as the coupling rabi frequency c decreases, the transient oscillation behavior slows up

    當_ c _ 3 / 2時，這個瞬態過程為一馳豫振蕩過程，在不同大小的耦合光rabi頻率_ c條件下， _ c取值越小，瞬態過程振蕩越慢。
  13. The dynamics is described by the glauber - type stochastic progress with the single - spin transition meehanism and disposed approximately by weighted average method in which we add a corresponding weight to each possible configuration. we obtain not only the exact analytical solutions of the time dependent magnetization and equal time spin - pair correlation functions, but also the analytical temperature dependent dynamical relaxation function

    通過採用加權平均的近似處理方法，也就是對各種可能出現的躍遷幾率賦一個相應的權重，我們不僅可以得到隨時間演化的磁化強度和等時對關聯的解析解，還得到了系統馳豫時間的溫度解析函數。
  14. During the last two decades, great interest has been aroused in the study of weak bonding complexes, as it can provide detail information on intermolecular properties such as multipole moments. interaction potentials, etc., which are highly important for us to understand the macroscopic physical and chemical properties of matter. moreover, the complexes of this kind are ideal objects for studying the processes of intermolecular energy transference, vibrational relaxation and predissociation which are the bases for studying macroscopic phenomena

    在過去的二十年中，人們對弱成鍵復合物的研究興趣非常濃厚，因為它們能夠提供分子內部的細節信息，比如多極矩、分子的相互作用勢等等，而這些信息對我們理解宏觀物質的物理和化學性質至關重要。並且，范德華復合物是研究分子間能量轉移、振動馳豫和振動預解離等過程的理想物質。
  15. As is known to all, one of the most important characteristics of sige hbt is the strained sige base growing on the si substrate. generally, the base is required to be very thin so as not to cause the base sige crystal lattice mismatching in subsequent annealing process. also, in order not to increase the thermal noise of device, the base is always heavily doped

    眾所周知， sigehbt的主要特點之一就是在si材料襯底上生長的sige材料是應變的，為了在後續的高溫退火工藝中不發生晶格馳豫現象，通常要求器件的基區要做的很薄，同時為了不增加器件的熱噪音，通常sigehbt基區都是高摻雜的。
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