高壓晶體管 的英文怎麼說

中文拼音 [gāoyājīngtǐguǎn]
高壓晶體管 英文
high voltage transistor
  • 高 : Ⅰ形容詞1 （從下向上距離大; 離地面遠） tall; high 2 （在一般標準或平均程度之上; 等級在上的） above...
  • 壓 : 壓構詞成分。
  • 晶 : Ⅰ形容詞（光亮） brilliant; glittering Ⅱ名詞1. （水晶） quartz; （rock） crystal 2. （晶體） any crystalline substance
  • 體 : 體構詞成分。
  • 管 : Ⅰ名詞1 （管子） pipe; tube 2 （吹奏的樂器） wind musical instrument 3 （形狀似管的電器件） valve;...
  • 高壓 : 1 （殘酷迫害; 極度壓制） high handed 2 [氣象學] （高氣壓） high pressure3 （高電壓） high tension...
  • 晶體 : [晶體學] crystal; vitrella; crystal body; crystalloid; x-tal
  1. Semiconductor discrete device. detail specification for npn silicon low - power hiht - reverse - voltage transistor for type 3dg182gp gt and gct classes

    半導體分立器件gp gt和gct級3dg182型npn硅小功率高反壓晶體管.詳細規范
  2. The factors limiting the frequency band of the wide - band amplifier are introduced. through analyzing the effects of the intrinsic parameters and parasitical on the frequency characteristics, a method of improving fr of mosfet by using short channel device and making mosfet work at the saturation region through raising vgs is put forward ; the effects of different kinds of circuit configurations on the frequency characteristics and the junction voltage on the voltage pattern circuit, current pattern circuit and frequency characteristics are analyzed. according to the linear theory of transconductance which is applied in the bit circuit, the current pattern amplifier circuit, current transfer circuit and output circuit which consist of mosfet and the wide - band amplifier composed of them are put forward

    介紹了限制寬帶放大器頻帶寬度的因素，通過分析mosfet的本徵參數、寄生參數對頻率特性的影響，提出了採用短溝器件、使mosfet工作在飽和區、抬高柵源電壓等提高mosfet特徵頻率的方法；分析了不同電路組態對放大器頻率特性的影響、節點電壓對電壓模電路、電流模電路頻率特性的不同影響，根據應用於雙極晶體管電路的跨導線性原理，提出了採用mosfet構成的電流模放大電路、電流傳輸電路、輸出電路以及由它們所組成的寬帶放大器，獲得了良好的頻率響應。
  3. In the paper, on the basis of research of static state and transient state in the scr and series connection valve circuit, the high voltage scr changing current valve device has been developed for ac - dc - ac high voltage commutatorless motor. the series connection valve circuit has been designed and simulated. the hardware design and software programming of trigger pulse system and monitoring system in the photo - electronic - photo fashion has been completed

    無換向器電動機在火電廠等工礦企業的電機調速節能領域中有十分廣闊的應用前景，本文在對晶閘管元件和串聯閥電路的靜態特性和動態特性研究的基礎上，研製了用於交直交電流型高壓無換向器電動機的高壓晶閘管換流閥裝置，進行了串聯閥電路的設計和模擬，完成了電光電方式的觸發脈沖系統和監測系統硬體設計及軟體編程，並進行了裝置的實驗調試。
  4. Abstract : a vertical sandwich deep trench with a field limiting ring is proposed to improve the breakdown voltage of power devices and high voltage devices. simulation result shows that nearly 100 breakdown voltage of the plane junction can be realized

    文摘:提出一種二氧化硅/多晶硅/二氧化硅夾心深槽場限制環新結構來提高晶體管的擊穿電壓.模擬結果顯示，該結構可以使射頻功率雙極性晶體管的擊穿電壓幾乎100達到平行平面結的理想值
  5. After constructing a 35 - nanometer - high channel between two silica plates and filling it with potassium chloride saltwater, they demonstrated that voltage applied across this nanofluidic transistor could switch potassium ion flow on and off

    他們在兩片硅板之間製作35奈米高的通道，注入氯化鉀溶液，示範在這個奈米流體晶體管上施加的電壓可開啟或阻斷鉀離子流。
  6. And the fuzzy control technology has been studied that reduce the stator terminal voltage to achieve higher power factor through testing power factor and using certain rules. the asynchronous motor intelligence operating control system plan design has been completed. simulation design and simulation experiment of the system has been carried on, and the simulation result indicated this intelligence control system has achieved the anticipated effect

    在分析電機功率因數角的變化規律及功率因數角對晶閘管輸出電壓的影響的基礎上，提出了異步電動機在輕載或空載運行時通過檢測功率因數並經過一定規則降低定子端電壓來達到提高功率因數目的的模糊控制方法，完成了異步電動機節能運行控制系統的軟硬體設計，並進行了系統的模擬研究與實驗研究。
  7. With the development of doping technology, the formation of the base region in high - voltage transistor can be made by b diffusion technology, b - a1 paste - layer diffusion technology, close - tube ga - diffusion technology and open - tube gallium - diffusion technology

    隨著摻雜工藝的不斷發展，高反壓晶體管基區的形成經歷了擴硼工藝、硼鋁塗層擴散工藝、閉管擴鎵工藝到開管擴鎵工藝的發展。
  8. In this paper, they are set forth at first that the kinds of computer - simulation of electronic devices, the development and the requirements of mosfet ' s model and the way of gain the models " parameters, the dc models have been bui it in chapter 2 and the models of big signals have been deduced in chapter 3, they are different from the equivalent circuit models in the traditional software pspice that they come from the numer i ca i - s i mu i at i on wh i ch is based on the essence equat i on, so the precision of simulation is enhanced ? mosfet ' s small signal models of low frequency, intermediate frequency and high frequency have been built in chapter 4 and chapter 5, although the equivalent circuit models in pspice are used for reference to bui id them, they have their own characteristics which are analyzed at a i i kinds of situations, so that the simulation software for mosfet can be written according them and it i s a i so benef i c i a i for us to catch the gen i us character i st i cs of mosfet and to d esign all kinds of applicable devices the correctness of the models is simply proved in chapter 6

    本文首先介紹了電子器件計算機模擬的分類、 mosfet的建模發展動態、對器件模型的要求以及模型參數的提取方法。在第二章中建立了mos晶體管在直流端電壓條件下的工作模型；第三章推導了mosfet的大信號模型，這兩類模型不同於傳統模擬軟體例如pspice中的等效電路模型，而是從模型方程出發，採用數值模擬的方法，提高了模擬的精度。第四章和第五章分別建立了mos晶體管低頻、中頻、高頻的小信號模型，雖然借鑒了pspice模擬軟體中用等效電路模型的方法，但是本文分別討論了準靜態和非準靜態時器件的本徵部分以及包含非本徵部分工作于低頻、中頻和高頻條件時的模型，可以根據這些模型編寫相應的模擬軟體，這樣在做器件的模擬分析與器件設計的時候，就可以利用模擬軟體逐步深入地分析器件在不同的條件下和器件的不同部分在工作時的各種小信號特性，有利於抓住器件工作的本質特性，設計出符合要求的各類通用和特殊器件。
  9. With the strong dsp as the control unit, the design of main circuit structure is provided, and the control policy for the main circuit loop, the tuning of the triggering angle for thyristor are given

    在具體的系統實現中，變換器主迴路選擇環流控制方式，採用高性能dsp作為模糊控制核心，通過加權平均判決的模糊決策演算法對變換器主迴路晶閘管的觸發角進行調制，從而有效控制輸出電壓波形。
  10. The company mainly produces high - tension and low - tension electric equipment, thyristors electrical machinery soft starter, automatic regulating silicon piles etc. it developed the technology with own patent adopting sun shape heat tube radiators with steam and water separated, and developed the integrated power module unit including thyristors and rectifiers with the technology. the products organization is novel, and it conducts heat rapidly and has solved the difficult problems of heat dissipation in generator excitation and exchange power

    公司主要生產高低壓成套電器低壓動態無功補償裝置晶閘管電機軟啟動自動調壓硅堆等產品。研製開發出了「日」字形汽水分離式熱管散熱，並利用該技術開發了晶閘管整流管一體化功率組件，結構新穎，傳熱迅速，為發電機勵磁交流調功等領域解決了器件散熱難題，產品的各項性能均處于國內外領先水平。
  11. The proposed modulator uses 0. 35um standard cmos process, the nmos and pmos threshold voltage is 0. 54 volt and - 0. 48 volt, respectively, and the power supply is 1. 5 volt. the nyquist converter rate is 50 khz, oversampling ratio is 80. the proposed modulator can obtain 98db dynamic range, 16 bits converter resolution, and fits for high - fidelity, digital - audio application

    本設計採用0 . 35微米標準cmos工藝，其中nmos和pmos晶體管的閾值電壓分別為0 . 54伏和- 0 . 48伏，電源電壓為1 . 5伏，奈奎斯特轉換率為50khz ，過采樣率為80 ，該調制器可實現動態范圍98db ， 16位的轉換精度，適合高保真數字音頻應用。
  12. To compare with transistor ( complete solid - state ) high - frequency linear power amplifier, there are some disadvantages : bad stability and reliability, low efficiency, high cost for operating, huge cabinet, heavy maintenance work load, low security for high - voltage electricity offering, and to ensure the continuance of tv program, the transmitter must be operating with main frame and spare frame

    它們與晶體管（全固態）高頻線性功率放大器相比，存在著穩定性及可靠性差、效率低、運行費用高、發射機體積大、日常維護工作量大、高壓供電不安全、必須採用主機和備機的運行方式來確保電視節目不停播等缺點。
  13. A vertical sandwich deep trench with a field limiting ring is proposed to improve the breakdown voltage of power devices and high voltage devices

    摘要提出一種二氧化矽多晶矽二氧化矽夾心深槽場限制環新結構來提高晶體管的擊穿電壓。
  14. Semiconductor discrete device. detail specification for type 3dk406 high - voltage and power switching transistor

    半導體分立器件. 3dk406型高壓功率開關晶體管詳細規范
  15. Semiconductor discrete device. detail specification for type 3dk6547 high - voltage and power switching transistor

    半導體分立器件. 3dk6547型高壓功率開關晶體管詳細規范
  16. In this paper, a phase shifting pulse width modulated ( pwm ) soft switching high voltage invert power supply has been developed with the use of the principle of advanced invert technique and the new type of power semi - conductor device - insulated gate bipolar transistor ( igbt )

    本文採用最新的逆變思想與新型的開關器件?絕緣柵型雙極晶體管（ igbt ） ，研製出了移相式pwm軟開關高壓逆變電源。逆變技術發展至今，已經逐漸向大功率方向發展。
  17. With the pentacene acting as the active layer, the diode of ito / pentacene / al, the vertical organic thin - film field - effect transistor, the organic thin - film ambipolar field - effect transistor and the organic thin - film double - field - effect transistor are fabricated

    提出雙柵絕緣層結構全有機薄膜場效應晶體管，達到了減少器件柵的漏電流、降低器件工作電壓和提高器件工作電流的目的。
  18. Hvdc light is a kind of new dc transmission technology developed from the traditional hvdc, with voltage source converter ( vsc ) and igbt as main components. the basic principles of vsvpwm are studied, and an approach to simulate vsvpwm based on pscad / emtdc is put forward in this thesis

    輕型高壓直流輸電（ hvdclight ）技術是在傳統直流輸電基礎上發展起來的一種新型輸電技術，其主要部件是以絕緣柵雙極晶體管構成的電壓源換流器（ vsc ） 。
  19. A switch ic for analog signal processing is designed and implemented, which can fulfill the functions of sampling, weighting, controlling and summing of high frequency analog signals. the circuit consists of three parts : four channel analog switches, a voltage reference and the control circuitry. each analog switch is comprised of two high - transconductance n - mosfets with high w / l ratio, which realize the fine tuning and coarse tuning of the input signal respectively

    本文研究並設計了一種可對高頻信號進行取樣、加權、控制、疊加的模擬信號處理丌關集成電路，它包括模擬開關、電壓基準源和移位寄存器三個功能模塊，通過兩個高寬長比的高跨導nmos晶體管實現權值的粗調和微調。
  20. A real - time monitor system for high voltage thyristor vale is developed, which monitors the faults of over - current, over - voltage in the system and situation of thyristor failure and bod activation. the hardware and software of monitor system is illuminated

    論文研製開發了高壓晶閘管閥的實時監控系統，對系統的過流、過壓等故障及晶閘管閥的元件擊穿、過壓保護動作等狀態進行監控，並對其硬體電路和軟體結構進行了說明。
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