高壓等離子體 的英文怎麼說

中文拼音 [gāoyāděnglízitǐ]
高壓等離子體 英文
high pressure plasma
  • 高 : Ⅰ形容詞1 （從下向上距離大; 離地面遠） tall; high 2 （在一般標準或平均程度之上; 等級在上的） above...
  • 壓 : 壓構詞成分。
  • 等 : Ⅰ量詞1 （等級） class; grade; rank 2 （種; 類） kind; sort; type Ⅱ形容詞（程度或數量上相同） equa...
  • 離 : Ⅰ動詞1 （離開） leave; part from; be away from; separate 2 （背離） go against 3 （缺少） dispens...
  • 子 : 子Ⅰ名詞1 （兒子） son 2 （人的通稱） person 3 （古代特指有學問的男人） ancient title of respect f...
  • 體 : 體構詞成分。
  • 高壓 : 1 （殘酷迫害; 極度壓制） high handed 2 [氣象學] （高氣壓） high pressure3 （高電壓） high tension...
  • 離子 : [物理學] ion
  1. Crowbar circuit protection of high voltage power supply of plasma filled hpm source

    充等離子體微波源高壓電源的撬棒保護
  2. Exploding wires phenomenon is that if the high - density energy is poured into metal wire with small transverse section in a short time from high power pulse source, the metal wire will explode into gaseity and generate significant shock wave. the. fundamental reason of the generated shock wave is the plasma

    爆炸絲現象（ explodingwiresphenomenon ）是將存儲于高壓電容器中的能量，在極短的瞬間內傾注于很小截面積的金屬絲，使之汽化，產生強大的沖擊波，這種沖擊波產生的根本原因就是等離子體。
  3. This could increase the work function of ito, which would decrease the device threshold voltage and increase the luminescence efficiency consequently

    因此，採用氧等離子體處理的ito薄膜作為oled的陽極將降低發光器件的開啟電壓，提高其發光效率。
  4. Three typical ion source, radio - frequency ion source, duoplasmatron ion source and penning ion source, are usually used in neutron generator

    在通過d - t反應產生中子的低能倍壓加速器中，一般採用三種類型的離子源：高頻離子源（ rf ） 、潘寧離子源（ pig ）和雙等離子體離子源（ dp ） 。
  5. For unmagnetized, relativistic and hot ion plasmas, the ion - acoustic waves can be described by the kadomtsev - petviashvili ( kp ) equation ( ( ut + auux + buxxx ) x + duyy = 0 ). it suggests that the nonlinear ion - acoustic solitary waves in a relativistic hot ion plasma are stable even there are some higher order transverse perturbations. there are only compressive solitary waves in the relativistic hot ion plasmas which has been vertified analytically

    在低階近似下，無磁場相對論熱離子等離子體可由kp方程（ （ u _ t + auu _ （ x ） + bu _ （ xxx ） _ x + cu _ （ yy ） = 0 ）來描述，相對論熱離子等離子中的非線性離子聲孤波在高階橫向擾動下是穩定的，且在相對論熱離子等離子體中僅存在壓縮型孤波
  6. In the thesis, most advanced, relative, foreign high - tech has been pursued. feasibility analysis has n ' t been carried out by synthesizing much relative knowledge such as electromagnetism theory, plasma technology, aerodynamics, electronic technology etc until the scheme is confirmed, that is, a uniform, one atmosphere, controllable, glow - charge surface plasma can be generated and flow can be accelerated by changing electric field

    本文追蹤目前國外最先進的技術，綜合電磁理論、等離子體技術、空氣動力學、電子技術等相關知識進行可行性分析，確定了研究方案，即利用電流體力學（ ehd ）方法在一個大氣壓下產生高效、均勻、可控的射頻輝光等離子體，同時，通過改變電場促使流動加速。
  7. This paper studies the application of inductively coupled plasma ( icp ) technology to the etching compound semiconductor insb - in film. by means of single probe and double probe, the ion density and electron temperature of chamber ( 30mm and 50mm in height respectively ) under varied process condition were diagnosed. the spatial distribution of the axial position of the two parameters and the varied curve that the two parameters varies with the power and air pressure are obtained

    利用單探針和雙探針診斷30mm高反應室和50mm高反應室在各種工藝條件下的離子密度和電子溫度，得到這兩個參數在反應室軸向位置的空間分佈、隨功率和氣壓的變化曲線、頂蓋接地和反應室體積對它們的影響，結果表明離子密度為10 ~ 8 10 ~ （ 10 ） cm ~ （ - 3 ） ，電子溫度在4 10ev之間；當頂蓋接地時，該處的等離子體密度明顯大於不接地；在同樣條件下， 50mm高反應室內的離子密度明顯大於30mm高反應室。
  8. This paper mainly study on the technics of preparing nano - si3n4 and icpecvd. seeking for the proper parameter and technics, crystallization of nano - si3n4 powder with muffle furnace, probe the new effective way of improving the properties of nano - si3n4 powder the ion density in the reaction chamber was diagnosed by a langmuir probe. the rules were obtained under different air pressure, different radio frequency power and different position which the ion density changes about from 1010cm - 3 to 1010cm - 3 decreasing as the pressure increases and increasing as the power decreases

    利用朗繆爾探針診斷了反應室內等離子體參數，得到不同位置、不同功率和不同氣壓下等離子體密度的變化規律，結果表明離子密度為10 ~ 8 10 ~ （ 10 ） cm ~ （ - 3 ） ，等離子體密度隨著功率的增大而增大，隨著氣壓的升高而減小，由於離子鞘層的存在，在一定條件下提供了局部等離子體密度穩定的區域。
  9. If the focal point of the len shifts around the surface of the sample, the mass ablation, the temperature of the plasma and the spectral intensity appear asymmetric and their maximum occur at the location which is about 0. 4mm under the surface of the sample. ( 2 ) to the plasma of the aluminum alloy sample, when the operating voltage is 1600v, the height from the observed location of the plasma to the surface of the sample is 2mm and the argon pressure is 660 torr, the spectral intensity have the maximum values

    （ 2 ）對于標準鋁樣品，在激光器工作電壓為1600v 、等離子體觀測高度為2mm 、氬氣壓力為660乇時，其譜線強度最強；以al 308 . 22nm 、 al 309 . 27nm兩條譜線為分析線，發現隨著環境氣壓的增大，譜線自吸效應明顯增強，當環境氣壓達到600 - 700乇時，譜線幾乎產生自蝕。
  10. In this experiment, a neodymium glass laser is used to study the effects of the operating voltage, power density, the height from the observed location of the plasma to the surface of the sample, the location of the sample, the gas composition and the pressure on the intensity and quality of the spectrum

    本文採用高能量釹玻璃激光器，研究了激光器工作電壓、功率密度、等離子體的觀測高度、樣品位置、環境氣體及氣壓對等離子體的譜線強度及譜線質量的影響，獲得了最佳的實驗條件，並測量了金屬分析樣品中某些元素的含量。
  11. The work part of the micro - ppt is less than 200g, and less than 5mm in diameter. high isp and high efficiency are acquired because of the efficient coaxial discharge characteristic and higher discharge voltage than the standard ppt

    該推進器的基本原理是通過真空中對工質的高壓放電使工質電離為等離子體，等離子體在電磁場的作用下加速排出形成推力。
  12. The result shows that argon gas can not only promote the excitation of plasma at low pressure, but also improve discharge state, increase the density and activation of reaction radical and improve the quality of diamond films. on the other side, argon can cool the plasma and maintain low temperature of substrate due to its big ionization section and high collision probability with gas molecules

    結果表明，氣體系統中引入氬氣一方面不僅有利於維持低壓放電，而且改善放電狀態，提高反應活性基濃度和活性，提高低溫沉積金剛石膜的質量；另一方面，由於其大的電離截面使其和電子碰撞的幾率大大提高，對等離子體進行冷卻，有利於基片溫度的降低。
  13. The plasmas ejects in a high speed, and gives impulsion loading to the target surface which results in a series of compress wave propagation into target

    該等離子體向外高速噴射，從而施於靶面一個壓力極高的沖擊加載，導致一系列向靶內傳播的壓縮波。
  14. And flow velocity can be induced in still air. consequently a new method about active flow control is discovered. flow visualization has shown that plasma between symmetric streamwise electrode strips ca n ' t induce flow velocity at the same phrase driving but can at multi - phrase driving, and asymmetric streamwise eledtrode strips can induce flow velocity both at the same phrase and at multi - phrase driving in still air

    本文的主要工作表現在以下幾個方面：一、成功研製了高效、經濟、可控的輝光等離子體發生器，利用自行研製的等離子體發生器一個大氣壓下產生了均勻可控的輝光等離子體，並進行了流動顯示實驗，採用ehd技術在靜止的空氣中誘導了流場，開創了主動流動控制一條新思路。
  15. The properties of cn thin films such as their morphology, component, crystal structure and the bonding structure and the relation between those properties and the gas - phase reaction parameters were discussed, showing that the deposition of p - c3n4 thin film is the compete result of various reaction processes in the dynamics balance conditions ; the process of cn films depo sition is diagnosed in situ through the optical emission spectra technique, the effects of experimental parameters on the concentration of the precursors and the gas - phase reactions in the plasma have been obtained ; the main reaction precursors for film deposition identified ; the relation between the characteristics of cn thin films and the reaction process in the plasma is analyzed. the cn thin films deposition under different substrate temperatures in high pressure pe - pld shows that the si atom of the substrate has participated the cn films growth process, based on this the growth mode of cn thin films on the si substrate is proposed. the further experiment of cn thin films deposition on si substrate scratched by diamond as well as covered with fe catalyzer has been attempted, which indicates that changing the dynamics conditions of the surface reaction can alter the growth characteristic of the cn thin films and can enhance obviously the films growth rate

    採用pld技術進行了碳氮化合物薄膜沉積，得到了含氮量為21at的cn薄膜；研究了襯底溫度和反應氣體壓強對薄膜結構特性的影響，給出了cn薄膜中n含量較小、 sp ~ 3鍵合結構成分較少和薄膜中僅含有局域cn晶體的原因；引入脈沖輝光放電等離子體增強pld的氣相反應，給出了提高薄膜晶態sp ~ 3鍵合結構成分和薄膜的含n量可行性途徑；應用pe - cvd技術以ch _ 4 + n _ 2為反應氣體並引入輔助氣體h _ 2 ，得到了含n量為56at的晶態cn薄膜；探討了cn薄膜形貌、成分、晶體結構、價鍵狀態等特性及其與氣體壓強和放電電流的關系，證明了- c _ 3n _ 4薄膜沉積為滿足動力學平衡條件的各種反應過程的競爭結果；採用光學發射譜技術對cn薄膜生長過程進行了實時診斷，得到了實驗參量對等離子體中活性粒子相對濃度和氣相反應過程的影響規律，給出了cn薄膜沉積的主要反應前驅物，揭示了cn薄膜特性和等離子體內反應過程之間的聯系；採用高氣壓pe - pld技術研究了不同襯底溫度條件下cn化合物薄膜的結構特性，揭示了si原子對薄膜生長過程的影響，給出了si基表面碳氮薄膜的生長模式；在金剛石研磨和催化劑fe處理的si襯底上進行cn薄膜沉積，證明了通過控制材料表面動力學條件可以改變碳氮薄膜結構特性，並可顯著提高晶態碳氮材料的生長速率。
  16. Plasma nitriding is an application way to metal surface and heating treatment based on the formed plasma by glow discharge. nitriding is a way of heating treatment, namely, metal accessory is put into activate nitrogen and the gas of low light pressure is ionized into energy electrons, high energy ions and high energy neutral atoms by the action of the electric field under a definite temperature and the time of the heat preservation

    等離子滲氮是利用輝光放電形成等離子體在金屬表面，熱處理方面的應用，滲氮是強化金屬表面的一種熱處理方法，是將金屬零件置於活性氮的介質中，在一定溫度和保溫時間下，低光壓氣體在電場作用下使之電離產生能電子、高能離子和高能中性原子。
  17. That is to say, high frequency modulational field radiated from the antenna system of moving bodies influents the charge distribution in plasma, while the disturbance of the charge distribution influents the field conversely

    也就是說，在壓縮區內，飛行體天線輻射出的高頻調制場，影響著等離子體中的電荷分佈，而電荷分佈的擾動又反過來影響場量。
  18. As a powerful pulsed laser irradiate a solid material, the plasmas layer of high - temperature and high - pressure would be formed in the incident surface of target instantaneously

    脈沖強激光輻照固體靶材時，瞬間即可在靶材輻照面形成一個高溫高壓的等離子體層。
  19. The neutral gas pressure is smaller where electric fields is stronger, which is independent of the instantanious electric polarity of the electrode and cause gas flow from high pressure region to low pressure region. so flow can be accelerated if electric field is properly adjusted, which is the mechanism of the active flow control

    場強越大的區域氣體靜壓反而越低，而與瞬間電極的極性無關，導致了氣體從高壓區到低壓區的流動，因此只要適當改變電場的分佈就可以使氣體產生加速，這就等離子體主動流動控制的加速機理。
  20. The oxidation of sulfite is an important process in flue gas desulfurization by ammonia method

    摘要使用氣體放電等離子體對較高濃度的亞硫酸鈉進行氧化，在不同電壓和頻率條件下進行了實驗。
分享友人
分享到 Line

分享到臉書