高摻雜晶體 的英文怎麼說

中文拼音 [gāochānzájīngtǐ]
高摻雜晶體 英文
heavily doped crystal
  • 高 : Ⅰ形容詞1 （從下向上距離大; 離地面遠） tall; high 2 （在一般標準或平均程度之上; 等級在上的） above...
  • 摻 : 摻動詞[書面語] （持; 握） hold
  • 雜 : Ⅰ形容詞（多種多樣的; 混雜的） miscellaneous; varied; sundry; mixed Ⅱ動詞（混合在一起; 攙雜） mix; blend; mingle
  • 晶 : Ⅰ形容詞（光亮） brilliant; glittering Ⅱ名詞1. （水晶） quartz; （rock） crystal 2. （晶體） any crystalline substance
  • 體 : 體構詞成分。
  • 摻雜 : 1. mix; mingle2. doping; inclusion; addition; adulteration
  • 晶體 : [晶體學] crystal; vitrella; crystal body; crystalloid; x-tal
  1. It has been found that all the elements in the addition act respectively in the way that affect the material ' s properties during the calcining process and the increase of the pms / pzn ratio can weaken the stability of the crystal structure of the sintered ceramics and cause the crystal structure transformation from the tetragonal to the rhombohedral as well

    發現多元壓電陶瓷材料中，無論是主加組元還是微量摻雜，預燒階段，它們在陶瓷中的作用都表現為單獨離子對陶瓷結構和性能所起的作用。燒結后，隨著pms pzn相對量的提高，陶瓷晶體結構由四方相向三方相轉化，同時穩定性下降。
  2. The cooler and temperature controller of nd : yap rod are improved and the lower dopant concentration of the nd : yap ( 0. 6 at. % )

    除了改進冷卻控溫系統外，選擇摻雜濃度較低的激光晶體，有利於高效散熱，得到更穩定的激光輸出。
  3. It is shown that with increasing doped value x, structures of the crystals change its low symmetry into high symmetry and doping with praseodymium can induce larger crystal structure distortion than other elements

    發現塊材樣品隨摻雜量x增加，晶體結構由低對稱向高對稱性轉變。通過摻雜pr元素可以引起晶格較大畸變。
  4. The voltage of lithium - intercalation reaction, impedance and structural stability of intercalation - type cathode material were analysed and calculated. theoritical results show that the reaction voltage depends on the content of lithium and the bond energy, and that the key ways to lower the electrode impedance are to increase the electronic conductivity of the electrode and the diffusion coefficient of lithium ion in the host and to decrease the size of powder. in addition, the thermal stability of lithium - insertion structure can be improved by using crystallographic co - lattice theory and doping treatment

    本文從嵌入式陰極材料的嵌鋰反應的電壓、阻抗及結構穩定性的分析和理論計算著手，得到了電壓取決于基體中各種離子間的鍵能及鋰含量、降低電極阻抗的關鍵是提高電子型導電性和li ~ +在基體中的擴散系數及減小粉末粒度的理論依據及其利用晶體的共格原理和摻雜改性的方式來提高材料嵌鋰結構的熱穩定性的設計思路。
  5. In this paper, pure and doped ktp crystals were grown from the flux using a top - seeded method, and special technique have been used to lower the electrical conductivity to three orders of magnitude than common flux ktp, the values is up to 10 - 10 ( cm ) - 1, this overcame the shortcoming that common flux ktp cannot be used in e - o application field because of having higher electrical conductivity. the growth condition, doped elements and annealing technology were investigated. single crystals of ktp with high quality and big z - cut cross section were obtained by optimizing the parameter of crystal growth

    本實驗採用頂部籽晶熔劑法生長了純的以及不同摻雜的ktp晶體，用特殊工藝處理技術將普通熔劑法ktp的電導率降低了三個數量級，達到了10 ~ （ - 10 ） （ cm ） ~ （ - 1 ） ，解決了普通熔劑法ktp晶體由於離子電導率太大而無法用於電光應用領域的困難；對ktp晶體的生長條件、摻雜元素以及退火工藝等進行了研究，通過優化生長工藝技術參數，突破了工藝技術生長難關，得到了高光學均勻性、具有大z切面的ktp單晶。
  6. With the development of doping technology, the formation of the base region in high - voltage transistor can be made by b diffusion technology, b - a1 paste - layer diffusion technology, close - tube ga - diffusion technology and open - tube gallium - diffusion technology

    隨著摻雜工藝的不斷發展，高反壓晶體管基區的形成經歷了擴硼工藝、硼鋁塗層擴散工藝、閉管擴鎵工藝到開管擴鎵工藝的發展。
  7. On photo - electric properties of nanwire mosfet with its crystal microstructure

    未摻雜納米線高電阻與其晶體微結構光電性質
  8. The appropriate calcinations temperature is about 700, and the tetragonal sno2 phase crystal structure of the particles remained unchanged when sb was doped to it. as the calcinations temperature increasing and the calcinations time prolong, the size of particles grows and the crystallization tend to be complete. study on the electrical properties of ato powders prepared by hydrothermal synthesis was performed in - depth, the most optimal electrical properties are obtained at doping ratio of 11 percent

    水熱法制備的ato納米粉體在熱處理溫度700左右較為適宜，銻的摻雜並未改變粉體的四方相金紅石結構，隨銻摻雜量的增加，粉體的粒度變小；隨熱處理溫度的升高和熱處理時間的延長， ato粉體的粒度增大，晶體結構趨于完整。
  9. This part emphasizes the synthesis of nanoarrays, aiming at controlling the size and distance of nanocrystallites using calixarene derivatives by altering the size, length and chemical structure of the organic molecules ; 2. this part emphasizes in situ synthesis strategy for fabrication of polymer network of zns based nanopowder, aiming at size controls, coating and preventing agglomeration following " one - pot " synthesis ; this method fits to low cost, large scale production ; 3. according to development in zno nanomaterials, we first report on the synthesis, characterization of amorphous zno, aiming at describing the principles and approaches of synthesis techniques, optical properties, spatial structure and doped effect ; the amorphous zno displays cage - like structure, showing a strong ultraviolet emission while the visible emission is nearly fully quenched, a potential uv - emission material ; 4

    本論文以量子結構自組裝為出發點，提出利用杯芳烴及其衍生物的化學受限反應實現尺寸可調半導體納米粒子自組裝；提出有機聚合網路原位組裝zns基納米熒光粉方法，把熒光粉的納米化、包敷、防團聚在「一鍋」反應中完成，適于低成本，批量生產；根據當前zno的研究情況，我們首次合成了非晶zno ，研究了它的光學性質，確定了它的結構，並對其摻雜進行了初步的研究，非晶zno表現出強的深紫外發光特性，而可見發射非常弱，是一種有巨大潛在應用價值的深紫外發光材料；利用非晶zno的亞穩特性，對晶化過程中非晶zno納米晶zno三維受限量子結構特性，界面特性進行了深入的研究；利用固相熱分解一般受擴散控制特性，實現了尺寸可控的zno三維量子結構的自組裝；利用非晶zno的高度分散性，容易均勻成膜特性，實現了非晶籽晶誘導低溫液相外延自組裝生長高取向zno晶體薄膜。
  10. For the substrate of heavily boron doped wafer, it has been proved that oxygen concentration is increased and oxygen precipitation is enhanced by hb ( heavily boron - doping ) during crystal growth, which is beneficial for ig and therefore improve the yield of ulsi

    另一方面，在相同的晶體生長條件下，重摻硼硅單晶氧含量升高，氧沉澱被增強，能形成有效吸雜點，提高矽片機械強度，抑制void缺陷，有利於提高ulsi的成品率。
  11. Then, we utilized the additives of - al _ 2o _ 3 powder seeding, alumina sol seeding, tio _ 2 - sol, ammonium nitrate, and high - energy ball milling on the precursors to investigate these factors " influences on the transformation temperature, the microstructure of as - received nano - sized - al _ 2o _ 3 powders and transformation sequences

    接著，就分別研究在前驅體中加入或摻雜q - al _ 2o _ 3粉體籽晶、氧化鋁膠體籽晶、 tio _ 2溶膠、硝酸銨以及高能球磨前驅體等一系列因素對相變溫度、最終產物微結構、相變過程等的影響。
  12. Thin films with thickness of 0. 31m and 0. 36m respectively on si substrate, have been successfully prepared by a sol - gel spin coating method. cubic nanocrystals can be obtained at relatively low sintering temperature with an average grain size of about 47 nm and 51 nm respectively. the aluminia - doped scsz thins film are the same dense as the scsz thin films. however, there are a small amount of pinholes found in the microstructure of the titania - doped scsz films

    0 . 70固體電解質納米晶薄膜。燒結實驗結果表明，兩種薄膜均在650以上開始晶化，溫度越高，晶化越完全，在800可完全晶化所得納米晶顆粒呈純的螢石結構立方相鋁和鈦摻雜的納米晶顆粒的平均大小分別為47和51nm 。
  13. In this research, nanosize tio2 were prepared by wet chemistry method. the effects of technical condition, ion doping and noble metal modification on crystal structure of ti02, crystal size and its distribution, spectrum and photocatalytic activity were studied in order to prepare nanosize tio2 of high photocatalytic activity. effect factors such as temperature in photocatalytic process were also studied

    本工作選用濕化學方法制備納米tio _ 2光催化劑，研究制備工藝條件、離子摻雜和貴金屬沉積等對納米tio _ 2晶體類型、粒徑大小及分佈，光譜性質和光催活性的影響規律，以期研製出具有高光催化活性的納米tio _ 2光催化劑；同時研究光催化過程中光催化環境溫度等因素對光催化活性的影響規律。
  14. After processing, the cell parameter, transparency, optical damage threshold of ktp crystal have been measured as well as the distribution coefficient of doped elements. the results showed that, after dopping, the cell parameter and transparency of ktp crystal changed little ; optical damage threshold increased three orders of magnitude than the common flux ktp, meanwhile, optical homogeneity decresed a little

    將ktp晶體加工后測試了它們的晶胞參數、透過率、光損傷閾值、摻雜元素分凝系數等，結果表明，經過摻雜的ktp晶體晶胞參數、透過率等基本沒有變化，光學均勻性稍有下降，而激光損傷閾值卻提高了3倍。
  15. A conclucion can be drawed by study the effection of p, that is, lower p dopant is good to improve the properties of ybyp _ xv _ ( 1 - x ) o _ 4 crystal

    考察了p含量對晶體性能的影響，得出初步結論：當少量摻雜p時對提高ybyvo4晶體性能有利。
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