高電離離子 的英文怎麼說

中文拼音 [gāodiànlílízi]
高電離離子 英文
high ion
  • 高 : Ⅰ形容詞1 （從下向上距離大; 離地面遠） tall; high 2 （在一般標準或平均程度之上; 等級在上的） above...
  • 電 : Ⅰ名詞1 （有電荷存在和電荷變化的現象） electricity 2 （電報） telegram; cable Ⅱ動詞1 （觸電） give...
  • 離 : Ⅰ動詞1 （離開） leave; part from; be away from; separate 2 （背離） go against 3 （缺少） dispens...
  • 子 : 子Ⅰ名詞1 （兒子） son 2 （人的通稱） person 3 （古代特指有學問的男人） ancient title of respect f...
  • 離子 : [物理學] ion
  1. Determination of cao, mgo, sio2, fe2o3, tio2 in alundum powder by icp - aes

    剛玉粉中氧化鈣氧化鎂二氧化硅三氧化二鐵二氧化鈦的電感耦合高頻等離子體發射光譜法測定
  2. Equipment and instruments : electronic analytic balance, uv and vis spectrophotometer, 97rt fluorescence spectrophotometer, gas chromatograph spectrometer, high speed centrifugal machines, leica rm 2015 microtome, fluorescence microscopes, pcr amplifier, and so on

    :電子分析天平、紫外可見光分光光度計、 97rt熒光分光光度計、氣相色譜儀（附4種檢測器） 、高速離心機、病理切片機、熒光顯微鏡、 pcr擴增儀等。
  3. Ii ) energies of the sputtered atoms vary mainly from several to several teens ev, with few atoms " energy relatively high ; the emitting positions of the sputtered atoms are close to the corresponding incident ions ( in the order of angstrom ) ; the sputtered atoms are emitted mainly normally, and few are slantways ; energy and angular distributions of sputtered atoms are influenced by the energies and incident directions of incident ions, but the angular distributions are not influenced by the incident energy very greatly

    Ii ）濺射原子的能量一般集中在幾個到十幾個電子伏特的范圍內，在高能量區域也有所分佈，但數量很少;濺射原子的出射位置就在離子入射位置的附近（埃數量級） ;濺射原子的角度在垂直方向和斜射方向都有所分佈，但以垂直出射為主;濺射原子的能量、角度分佈受到了入射離子能量、角度的影響，但入射離子能量對濺射原子的出射角影響不大。
  4. Using the multi - configuration dirac - fock method ( mcdf ), we studied the characteristic of the decay processes of the 4d core excited states of csiv, the low - lying excitation structure of super - heavy element bohrium ( z = 107 ) and the x - ray spectra of the 3d - 4f transitions of highly charged xenon ions in details in this work, by including the electron correlation and the relaxation effects systematically

    本論文運用mcdf方法，通過系統考慮電子相關效應和馳豫效應，分別研究了cs離子的4d內殼層激發態衰變動力學特性，超重元素bh （ z = 107 ）的低激發態結構以及高離化態氙離子的3d - 4f躍遷產生的x射線譜的結構等問題。
  5. This product is the newest filming technique, the latest achievement of usa electronic magic, it utilizes decomposition principle of electronic material to form a positive negative ions film on the surface of car coating, which has high water repellency and makes the surface of coat has more than 95 % brightness of mirror surface, lt has preeminent performance on weathering resistance, ageing resistance, oxidation resistance static resistance and wear resistance, with the force of charged ions, this product can easy removes the dirt, water drop acid rain and grease on the surface of the film and perennially and effectively protect coat surface, lt is the fourth generation car beauty and protective product which replaces glaze sealing products

    本品屬于當今最新的鍍膜技術，屬美國電子工學魔法的最新成果，它利用電子物質的分解原理，在車漆表面生成持有高撥水性的正負離子覆膜，使漆面光亮度可達鏡面光澤的95 %以上，並具有超強的耐候性、抗老化、防氧化、防靜電、耐磨性極好的功能，它利用電離子的力量，可輕松彈去覆膜表面的污垢、水滴、酸雨、油脂等，平時只需清水沖洗，便可立即使之恢復離子效應，達到長期保護漆面的目的，是取代封釉的第四代汽車美容保護產品。
  6. 4 the cleanout and the passivation of si surface was carried out by a two - step process to overcome the surface oxide layer and balance the charge between the substrate and epitaxy. by this way, the crystal quality and emission characteristic of zno thin films can be improved, which provide a way to resolve the native oxide layer of si substrate

    4 、通過用等離子體對硅襯底表面進行清洗和鈍化兩步處理，解決硅襯底表面的氧化層和界面電荷平衡問題，制備出了高質量的氧化鋅薄膜材料，找到了一條獲得了高質量的氧化鋅薄膜的新途徑。
  7. In this dissertation, refining grains, depositing conductibility carbon film on the surface of the particles and doping mg ~ ( 2 + ) into the lattice of lifepo4 were adopted to improve the electro - chemical performance of the cathode material. the cathode material lifepo4 mainly has two flaws, the low conductibility and the slow li + ion diffusion, which have a bad influence on the performance of the cathode material

    論文主要針對制約正極材料lifepo _ 4性能的兩大致命的缺點，即低的電子導電率和低的鋰離子擴散速率，採取材料顆粒的細化、顆粒表面沉積碳導電層以及mg ~ （ ~ （ 2 + ） ）離子摻雜等措施對其進行改性探索，以提高正極材料lifepo _ 4的電化學性能。
  8. If the electrical conductivity is high enough the field becomes "frozen" into the plasma.

    如果電導率足夠高，磁場就「凍結」在等離子中。
  9. A detailed analysis of the electrical properties of ato thin films was carried out in order to investigate the sb / sn atomic ratio and substrate temperature ' s influence on the ato thin film. a convictive explanation brought forward to illustrate the changing of the electrical ； properties of the ato thin film in different conditions

    在溫度較低時（ < 500 ） ，薄膜的方塊電阻隨成膜溫度的升高而降低；當基板溫度繼續升高，薄膜的方塊電阻隨基板溫度的升高而增大，這主要是因為玻璃基板中k ~ + 、 na ~ +離子向薄膜中的擴散。
  10. Cosmic rays and x-rays produce energetic electrons by ionization.

    宇宙射線和X射線因其電離作用產生高能電子。
  11. Impulse heavy current technology, as one of the important researches of pulse power techniques, is also widely applied to technology of high - temperature plasma, strong magnetic field, mechanics effects and so on

    沖擊大電流技術是脈沖功率技術的重要研究內容之一，廣泛的用於高溫等離子體、強磁場、力學效應等研究領域。
  12. 3. an elementary attempt has been made to enhance the signa - to - noise ratio of pqc sensors using cholestyramine particles embedded in the sensing film. bor more, an all - purpose sulpha - drugs pqc sensor was developed whch can be used for screening practice

    對如何提高基於離子對締合物的壓電藥物傳感器的信噪比進行了初步探索，發現在傳感膜層嵌入考來烯胺樹脂顆粒對磺胺藥物壓電傳感器的信號有明顯的擴增作用。
  13. Study of improvement of graft and dyeability of linen by air dbd plasma surface treatment

    空氣介質阻擋放電等離子體亞麻表面處理提高接枝率研究
  14. Now we possess of 9, 000 square meters independent industry garden. with the spirit of design showing originality, " yuesheng " specialized manufacturer of plasma tv racks wall hanging home theater tv hi - fi cabinet surround stand stereo stand display stand. now our products already have a worldwide reputation, and have clients in china, south - east asia, mid - east, as well as europe and america

    「悅盛」憑借多年獨具匠心的電視櫃設計理念，專業生產高級等離子液晶電視落地櫃壁架家庭影院tv -電視櫃， hi - fi機櫃環繞腳架音箱腳架展示架，目前悅盛產品遠銷東南亞及歐美國家，並長期為國際知名品牌提供oem . odm服務。
  15. The iron covered silicon powder was fabricated separately by the milling method and the mixing method. treated separately at 500, 600, 700, 800, 900 and 1000 for 1 minute, the iron silicon alloy bulk was attained. it also found that the density of the bulk was enhanced by the boost of the treated temperature

    實驗分別採用球磨法和混料法制備鐵硅包覆粉末，採用放電等離子燒結技術分別在500 ， 600 ， 700 ， 800 ， 900 ， 1000保溫一分鐘進行處理，得到鐵硅合金塊體，研究發現，隨著處理溫度的提高，塊體的緻密度隨之增加，顯微結構的分析表明，塊體基本保持了包覆粉末原始自然狀態。
  16. The properties of cn thin films such as their morphology, component, crystal structure and the bonding structure and the relation between those properties and the gas - phase reaction parameters were discussed, showing that the deposition of p - c3n4 thin film is the compete result of various reaction processes in the dynamics balance conditions ; the process of cn films depo sition is diagnosed in situ through the optical emission spectra technique, the effects of experimental parameters on the concentration of the precursors and the gas - phase reactions in the plasma have been obtained ; the main reaction precursors for film deposition identified ; the relation between the characteristics of cn thin films and the reaction process in the plasma is analyzed. the cn thin films deposition under different substrate temperatures in high pressure pe - pld shows that the si atom of the substrate has participated the cn films growth process, based on this the growth mode of cn thin films on the si substrate is proposed. the further experiment of cn thin films deposition on si substrate scratched by diamond as well as covered with fe catalyzer has been attempted, which indicates that changing the dynamics conditions of the surface reaction can alter the growth characteristic of the cn thin films and can enhance obviously the films growth rate

    採用pld技術進行了碳氮化合物薄膜沉積，得到了含氮量為21at的cn薄膜；研究了襯底溫度和反應氣體壓強對薄膜結構特性的影響，給出了cn薄膜中n含量較小、 sp ~ 3鍵合結構成分較少和薄膜中僅含有局域cn晶體的原因；引入脈沖輝光放電等離子體增強pld的氣相反應，給出了提高薄膜晶態sp ~ 3鍵合結構成分和薄膜的含n量可行性途徑；應用pe - cvd技術以ch _ 4 + n _ 2為反應氣體並引入輔助氣體h _ 2 ，得到了含n量為56at的晶態cn薄膜；探討了cn薄膜形貌、成分、晶體結構、價鍵狀態等特性及其與氣體壓強和放電電流的關系，證明了- c _ 3n _ 4薄膜沉積為滿足動力學平衡條件的各種反應過程的競爭結果；採用光學發射譜技術對cn薄膜生長過程進行了實時診斷，得到了實驗參量對等離子體中活性粒子相對濃度和氣相反應過程的影響規律，給出了cn薄膜沉積的主要反應前驅物，揭示了cn薄膜特性和等離子體內反應過程之間的聯系；採用高氣壓pe - pld技術研究了不同襯底溫度條件下cn化合物薄膜的結構特性，揭示了si原子對薄膜生長過程的影響，給出了si基表面碳氮薄膜的生長模式；在金剛石研磨和催化劑fe處理的si襯底上進行cn薄膜沉積，證明了通過控制材料表面動力學條件可以改變碳氮薄膜結構特性，並可顯著提高晶態碳氮材料的生長速率。
  17. New 50 inch plasma tv viera hdtv panasonic ideas for life

    英文：全新50英寸高清等離子電視及。松下，為生活而夢想。
  18. From time to time, the sun produces bursts of energetic ions and electrons ; furthermore, charged particles are a major component of the galactic cosmic radiation that constantly bombards our solar system

    太陽有時會爆發高能的離子與電子；再者，以帶電粒子為主成份的銀河宇宙射線，也會頻頻轟擊我們的太陽系。
  19. It assorts with other furniture in your room, it will give you a mild wind in modern life. science and art, improve the living character

    晶瑩剔透的鋼化玻璃高強度鋁合金組合而成的高級等離子電視櫃，無論安裝製作和空間擺
  20. The oxidation of sulfite is an important process in flue gas desulfurization by ammonia method

    摘要使用氣體放電等離子體對較高濃度的亞硫酸鈉進行氧化，在不同電壓和頻率條件下進行了實驗。
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