高頻放大器 的英文怎麼說

中文拼音 [gāobīnfàngdàqì]
高頻放大器 英文
amplifier, high-frequency
  • 高 : Ⅰ形容詞1 （從下向上距離大; 離地面遠） tall; high 2 （在一般標準或平均程度之上; 等級在上的） above...
  • 頻 : Ⅰ形容詞（次數多） frequent Ⅱ副詞（屢次） frequently; repeatedly Ⅲ名詞1 [物理學] （物體每秒鐘振動...
  • 放 : releaseset freelet go
  • 器 : 名詞1. （器具） implement; utensil; ware 2. （器官） organ 3. （度量; 才能） capacity; talent 4. （姓氏） a surname
  • 高頻 : high frequency
  • 放大器 : amplifier; pantograph; lawnmower; enlarger; magnifier
  • 放大 : amplify; magnify; boost; enlarge; blow up; gain; amplification; enhancement; multiplication; magn...
  1. In the blue print of the analog, author utilize the big dynamic vga to realize the if amplifier and use the audion to carry out the 80db agc, through the improvement of the traditional detect circuit, extend the dynamic range of the detector

    在模擬方案中，筆者採用了大動態的vga實現中頻放大;利用三極體檢波實現了80db的agc控制;通過對傳統二極體檢波電路改進，提高了檢波器的動態范圍。
  2. The factors limiting the frequency band of the wide - band amplifier are introduced. through analyzing the effects of the intrinsic parameters and parasitical on the frequency characteristics, a method of improving fr of mosfet by using short channel device and making mosfet work at the saturation region through raising vgs is put forward ; the effects of different kinds of circuit configurations on the frequency characteristics and the junction voltage on the voltage pattern circuit, current pattern circuit and frequency characteristics are analyzed. according to the linear theory of transconductance which is applied in the bit circuit, the current pattern amplifier circuit, current transfer circuit and output circuit which consist of mosfet and the wide - band amplifier composed of them are put forward

    介紹了限制寬帶放大器頻帶寬度的因素，通過分析mosfet的本徵參數、寄生參數對頻率特性的影響，提出了採用短溝器件、使mosfet工作在飽和區、抬高柵源電壓等提高mosfet特徵頻率的方法；分析了不同電路組態對放大器頻率特性的影響、節點電壓對電壓模電路、電流模電路頻率特性的不同影響，根據應用於雙極晶體管電路的跨導線性原理，提出了採用mosfet構成的電流模放大電路、電流傳輸電路、輸出電路以及由它們所組成的寬帶放大器，獲得了良好的頻率響應。
  3. The second, at the high frequency primary coil, when switch turn on with control signal ( the spwm pulse is modulated ), in the positive or negative semi - period of low frequency modulation signal, transformer coil with same direction voltage. the magnetic flux of transformer core will increase step by step. at the end, it leads to magnetic flux saturation

    二、在高頻變壓器原邊，當開關管接收控制信號脈沖列（經調制的spwm波列）導通時，在低頻調制信號的正半周或負半周內，施加在變壓器繞組上的是同一方向的電壓，變壓器磁芯中的磁通可能將級進地逐漸增加，導致磁芯飽和，造成磁偏或單向磁化，導致低頻電信號放大失真或由於很大的磁化電流而無法正常工作。
  4. The development of an electrosurgical apparatus with puls e width control

    一種脈寬控制的高頻電刀功率放大器的研製
  5. A uhf sensor is designed and fabricated, which mostly consists of antenna, uhf amplifier, high pass filter, and broadband wave detector

    通過與大華無線電廠合作，研製了超高頻傳感器，其主要由天線、超高頻放大器、高通濾波器、寬帶檢波器等組成。
  6. High repetition rate femtosecond yb - doped fiber amplifier

    高重復頻率飛秒摻鐿光纖放大器
  7. In wavelength conversion based on four - wave mixing ( fwm ) in soa, balance efficiency can be obtained in larger range when increasing saturation power of the optical amplifier and decreasing the saturation power of spectral hole burning and carrier heating

    而在基於soa的四波混頻（ fwm ）波長轉換中，在提高光放大器飽和功率的同時減小光譜燒孔（ shb ）和載流子加熱（ ch ）飽和功率可有效提高較大頻率間隔處的轉換效率，並保持其在較大頻率失諧范圍內的效率均衡。
  8. The class - d voltage switching amplifier technology is adopted to develop the rf amplifier

    載頻放大器採用高效率的class - d開關放大技術。
  9. In the thesis, a high efficiency linear am amplifier is developed, which is based on the basic theory of eer linearization amplifier technique [ 1 ]. the high efficiency digital audio amplifier technology [ 2 ] is adopted to develop the power supply modulator and the class - d switching amplifier technology [ 3 ] is adopted to develop the high efficiency rf amplifier

    本論文利用eer （ envelopeeliminationandrestoration ）線性功放技術的基本原理[ 1 ] ，採用數字音頻功放技術[ 2 ]實現高效率電源調制器，採用class - d開關放大技術[ 3 ]實現高效率載頻放大器，開發了一個集am調制和放大於一體的高效率線性功率放大器。
  10. Detail specification for electronic components. case rated bipolar transistor for silicon npn high - frequency amplification for type 3da1162

    電子元器件詳細規范. 3da1162型硅npn高頻放大管殼額定的雙極型晶體管
  11. Detail specification for electronic components. case rated bipolar transistor for silicon npn high - frequency amplification for type 3da1722

    電子元器件詳細規范. 3da1722型硅npn高頻放大管殼額定的雙極型晶體管
  12. Detail specification for electronic components. case rated bipolar transistor for silicon npn high - frequency amplification for type 3da 2688

    電子元器件詳細規范. 3da2688型硅npn高頻放大管殼額定的雙極型晶體管
  13. Specification for harmonized system of quality assessment for electronic components - blank detail specification : case - rated bipolar transistors for high frequency amplification

    電子元器件質量評定協調體系規范.空白詳細規范.高頻放大用管殼額定雙極晶體管
  14. Semiconductor devices ; discrete devices ; part 7 : bipolar transistors ; section 4 : blank detail specification for case - rated bipolar transistors for high - frequency amplification

    半導體器件.分立器件.第7部分:雙極晶體管.第4節:高頻放大雙極晶體管的空白詳細規范
  15. Semiconductor devices - discrete devices. part 7 : bipolar transistors. section four - blank detail specification for case - rated bipolar transistors for high - frequency amplification

    半導體器件分立器件第7部分:雙極型晶體管第四篇高頻放大管殼額定雙極型晶體管空白詳細規范
  16. Specification for harmonized system of quality assessment for electronic components - blank detail specification : ambient - rated bipolar transistors for low and high frequency amplification

    電子元器件用質量評估協調體系規范.空白詳細規范.低頻與高頻放大用額定周圍環境的雙極晶體管
  17. Semiconductor devices ; discrete devices ; part 7 : bipolar transistors ; section one : blank detail specification for ambient - rated bipolar transistors for low and high - frequency amplification

    半導體器件.分立器件.第7部分:雙極性晶體管.第1節:低頻和高頻放大用的額定環境晶體管的空白詳細規范
  18. Specification for harmonized system of quality assessment for electronic components - semiconductor discrete devices - blank detail specification - case - rated bipolar transistors for high - frequency amplifications

    電子元器件質量評估協調體系.半導體分立器件.空白詳細規范.高頻放大用外殼溫度額定雙極晶體管
  19. Simultaneously we append a high frequency amplifier in the high frequency sector, in order to recover the reduction of the gain in the new system

    同時，在改進后雷達的高頻部分增加高頻放大器，以抵消天線改進后引起的增益下降。
  20. Specification for harmonized system of quality assessment for electronic components - semiconductor discrete devices - blank detail specification - ambient - rated bipolar transistors for low and high - frequency amplification

    電子元器件質量評估的協調體系.半導體分立器件.空白詳細規范.低頻和高頻放大用環境溫度額定雙極晶體管
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