高頻放大管 的英文怎麼說

中文拼音 [gāobīnfàngdàguǎn]
高頻放大管 英文
high frequency amplifier tube
  • 高 : Ⅰ形容詞1 （從下向上距離大; 離地面遠） tall; high 2 （在一般標準或平均程度之上; 等級在上的） above...
  • 頻 : Ⅰ形容詞（次數多） frequent Ⅱ副詞（屢次） frequently; repeatedly Ⅲ名詞1 [物理學] （物體每秒鐘振動...
  • 放 : releaseset freelet go
  • 管 : Ⅰ名詞1 （管子） pipe; tube 2 （吹奏的樂器） wind musical instrument 3 （形狀似管的電器件） valve;...
  • 高頻 : high frequency
  • 放大 : amplify; magnify; boost; enlarge; blow up; gain; amplification; enhancement; multiplication; magn...
  1. The factors limiting the frequency band of the wide - band amplifier are introduced. through analyzing the effects of the intrinsic parameters and parasitical on the frequency characteristics, a method of improving fr of mosfet by using short channel device and making mosfet work at the saturation region through raising vgs is put forward ; the effects of different kinds of circuit configurations on the frequency characteristics and the junction voltage on the voltage pattern circuit, current pattern circuit and frequency characteristics are analyzed. according to the linear theory of transconductance which is applied in the bit circuit, the current pattern amplifier circuit, current transfer circuit and output circuit which consist of mosfet and the wide - band amplifier composed of them are put forward

    介紹了限制寬帶放大器頻帶寬度的因素，通過分析mosfet的本徵參數、寄生參數對頻率特性的影響，提出了採用短溝器件、使mosfet工作在飽和區、抬高柵源電壓等提高mosfet特徵頻率的方法；分析了不同電路組態對放大器頻率特性的影響、節點電壓對電壓模電路、電流模電路頻率特性的不同影響，根據應用於雙極晶體管電路的跨導線性原理，提出了採用mosfet構成的電流模放大電路、電流傳輸電路、輸出電路以及由它們所組成的寬帶放大器，獲得了良好的頻率響應。
  2. The second, at the high frequency primary coil, when switch turn on with control signal ( the spwm pulse is modulated ), in the positive or negative semi - period of low frequency modulation signal, transformer coil with same direction voltage. the magnetic flux of transformer core will increase step by step. at the end, it leads to magnetic flux saturation

    二、在高頻變壓器原邊，當開關管接收控制信號脈沖列（經調制的spwm波列）導通時，在低頻調制信號的正半周或負半周內，施加在變壓器繞組上的是同一方向的電壓，變壓器磁芯中的磁通可能將級進地逐漸增加，導致磁芯飽和，造成磁偏或單向磁化，導致低頻電信號放大失真或由於很大的磁化電流而無法正常工作。
  3. So the pipe system sends out noise because of resonance. especially the frequency 250hz of pulsating water is in close proximity to natural frequency of pipe, so the 250hz is a dangerous frequency to the pipe system. there is another reason why the noise is reached to 110db ( a ) in pump room that the noise is magnified by the cistern because of the resonance of cistern

    特別是激勵頻率為250hz的頻率分量恰好與管道系統的固有頻率相接近，其引起的管道振動對噪聲的貢獻最突出，同時也與水泵房房腔的固有頻率相接近，從而引起房腔共鳴發聲，使噪聲進一步被放大，以至於噪聲最大處高達105db （ a ） 。
  4. On the base of summarizing and reference to the achievement of uhf complete solid - state high - frequency power amplifier abroad, the author have made a deep research in uhf 10kw electron tube tv transmitter power amplifiers which are widely used inland, and asked for ideas of a lot of engineers of chongqing tv transmitting station, brought forward a practicable solidification scheme under the guidance of prof. gao chao and prof. guoyongcai, and made a successful practice at chongqing tv transmitting station

    筆者在總結和借鑒國內外有關uhf全固態電視發射機高頻線性功率放大器研究成果的基礎上，對目前國內電視發射臺普遍採用的uhf10kw電子管電視發射機高頻線性功率放大器進行了深入研究，並廣泛徵求重慶電視發射臺工程師的意見，在重慶大學高潮教授和郭永彩教授的指導下，提出了切實可行的固態化改造方案，並在重慶電視發射臺實踐成功。
  5. The main results are presented. second, the theoretical analysis about electron beam and wave interaction is presented. base on the theoretical analysis, numerical simulations of electron beam and wave interaction in gyroklystron were done

    二、通過採用自洽非線性大信號理論方法，在理論分析和高頻計算的基礎上對迴旋速調管放大器注-波互作用進行了數值計算。
  6. As the great reform and progress in a lot of techniques have been made in the new generation of semiconductor high - frequency power amplifier, valve power amplifiers are replacing by complete solid - state high - frequency linear power amplifiers gradually

    隨著新一代半導體高頻功率放大管的一些突破性變革和多種技術的推陳出新，電真空管功率放大器正在被全固態高頻線性功率放大器逐步取代。
  7. Blank detail specification - case - rated bipolar transistors for high frequency amplification ; german version en 150007 : 1991

    空白詳細規范.高頻放大額定功率雙極晶體管
  8. Detail specification for electronic components. case rated bipolar transistor for silicon npn high - frequency amplification for type 3da1162

    電子元器件詳細規范. 3da1162型硅npn高頻放大管殼額定的雙極型晶體管
  9. Detail specification for electronic components. case rated bipolar transistor for silicon npn high - frequency amplification for type 3da1722

    電子元器件詳細規范. 3da1722型硅npn高頻放大管殼額定的雙極型晶體管
  10. Detail specification for electronic components. case rated bipolar transistor for silicon npn high - frequency amplification for type 3da 2688

    電子元器件詳細規范. 3da2688型硅npn高頻放大管殼額定的雙極型晶體管
  11. Specification for harmonized system of quality assessment for electronic components - blank detail specification : case - rated bipolar transistors for high frequency amplification

    電子元器件質量評定協調體系規范.空白詳細規范.高頻放大用管殼額定雙極晶體管
  12. Semiconductor devices ; discrete devices ; part 7 : bipolar transistors ; section 4 : blank detail specification for case - rated bipolar transistors for high - frequency amplification

    半導體器件.分立器件.第7部分:雙極晶體管.第4節:高頻放大雙極晶體管的空白詳細規范
  13. Semiconductor devices - discrete devices. part 7 : bipolar transistors. section four - blank detail specification for case - rated bipolar transistors for high - frequency amplification

    半導體器件分立器件第7部分:雙極型晶體管第四篇高頻放大管殼額定雙極型晶體管空白詳細規范
  14. Specification for harmonized system of quality assessment for electronic components - blank detail specification : ambient - rated bipolar transistors for low and high frequency amplification

    電子元器件用質量評估協調體系規范.空白詳細規范.低頻與高頻放大用額定周圍環境的雙極晶體管
  15. Semiconductor devices ; discrete devices ; part 7 : bipolar transistors ; section one : blank detail specification for ambient - rated bipolar transistors for low and high - frequency amplification

    半導體器件.分立器件.第7部分:雙極性晶體管.第1節:低頻和高頻放大用的額定環境晶體管的空白詳細規范
  16. Specification for harmonized system of quality assessment for electronic components - semiconductor discrete devices - blank detail specification - case - rated bipolar transistors for high - frequency amplifications

    電子元器件質量評估協調體系.半導體分立器件.空白詳細規范.高頻放大用外殼溫度額定雙極晶體管
  17. The thesis has done the widespread investigation and study to the domestic and foreign ’ s technologies of analogy low voltage and low power, and analyzes the principles of work, merts and shortcomings of these technologies, based on the absorption of these technologies, it designs a 1. 5v low power rail - to - rail cmos operational amplifier. when designing input stage, in order to enable the input common mode voltage range to achieve rail - to - rail, it does not use the traditional differential input pair, but use the nmos tube and the pmos tube parallel supplementary differential input pair to the structure, and uses the proportional current mirror technology to realize the constant transconductance of input stage. in the middle gain stage design, the current mirror load does not use the traditional standard cascode structure, but uses the low voltage, wide - swing casecode structure which is suitable to work in low voltage. when designing output stage, in order to enhance the efficiency, it uses the push - pull common source stage amplifier as the output stage, the output voltage swing basically reached rail - to - rail. the thesis changes the design of the traditional normal source based on the operational amplifier, uses the differential amplifier with current mirror load to design a normal current source. the normal current source provides the stable bias current and the bias voltage to the operational amplifier, so the stability of operational amplifier is guaranteed. the thesis uses the miller compensate technology with a adjusting zero resistance to compensate the operational amplifier

    本論文對國內外的模擬低電壓低功耗技術做了廣泛的調查研究，分析了這些技術的工作原理和優缺點，在吸收這些技術成果基礎上設計了一個1 . 5v低功耗軌至軌cmos運算放大器。在設計輸入級時，為了使輸入共模電壓范圍達到軌至軌，不是採用傳統的差動輸入結構，而是採用了nmos管和pmos管並聯的互補差動輸入對結構，並採用成比例的電流鏡技術實現了輸入級跨導的恆定;在中間增益級設計中，電流鏡負載並不是採用傳統的標準共源共柵結構，而是採用了適合在低壓工作的低壓寬擺幅共源共柵結構;在輸出級設計時，為了提高效率，採用了推挽共源級放大器作為輸出級，輸出電壓擺幅基本上達到了軌至軌;本論文改變傳統基準源基於運放的設計，採用了帶電流鏡負載的差分放大器設計了一個基準電流源，給運放提供穩定的偏置電流和偏置電壓，保證了運放的穩定性;並採用了帶調零電阻的密勒補償技術對運放進行頻率補償。
  18. Because gyrotron traveling wave tube amplifier ( gyro - twt ) is an important millimeter wave amplifier with the characteristics of the high output power, the broadband width, and good efficiency, which has vast application vistas in many areas such as millimeter radar, communications, electronic countermeasure, and so forth, it has been pay much respect in the world

    迴旋行波管是一種大功率、高效率、寬頻帶放大器，在毫米波雷達，通信與電子戰等方面有十分重要的應用前景，因而在國際上受到高度重視。由俄羅斯人g . denisov等提出的螺旋波紋波導是一種比較理想的結構。
  19. Semiconductor devices - discrete devices. part 7 : bipolar transistors. section one - blank detail specification for ambient - rated bipolar transistors for low and high frequency amplification

    半導體器件分立器件第7部分:雙極型晶體管第一篇高低頻放大環境額定的雙極型晶體管空白詳細規范
  20. Specification for harmonized system of quality assessment for electronic components - semiconductor discrete devices - blank detail specification - ambient - rated bipolar transistors for low and high - frequency amplification

    電子元器件質量評估的協調體系.半導體分立器件.空白詳細規范.低頻和高頻放大用環境溫度額定雙極晶體管
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