amorphous film 中文意思是什麼
amorphous film
解釋
非晶膜-
The iron doped tio2 thin films showed almost no photocatalytic activity for the photodegradation of no in the gaseous phase when the calcination temperature was lower than 400 c. this was due to the fact that the phase structure of the film was amorphous. at 400 c, the film appeared obviously photoactive du
對于用液相沉積法所制備的tio :薄膜，薄膜中的si （或fe ）含量和薄膜的厚度可通過調節前驅體濃度、溶液的ph值、基片的沉積溫度和沉積時間，薄膜的熱處理溫度和時間進行有效地控制。 -
The method of amino ? roup doping into hydrogenated amorphous carbon ( ct - c : h ) film and the influence of technological condition on it had been exhaustedly discussed in the article
本文詳細研究了對氫化碳膜進行胺基團摻雜的方法，工藝條件。 -
Use of an amorphous diamond film as dental material
2催化熱處理中間相炭微球用作鋰離子電池負極材料 -
Besides, the growth of gasb expitaxy film was monitored by reflection high energy electron diffraction ( rheed ). the rheed images and intesity oscillation are collected by computer system. it showed that the gasb film prepared in 400 was amorphous and it became monocrystalline when the temperature rose to 500. atomic force microscope ( afm ) was applied to analyse the surface morphology of the films which were grown in diffrent growth rates or substrate temperature. the analysis were compared to simulation results. the experiment results indicated it was easy to form clusters when the rate of growth is high or
此外，本文通過反射式高能電子衍射（ rheed ）監測了gasb外延薄膜的生長，利用rheed強度振蕩的計算機採集系統實現了rheed圖像和rheed強度振蕩的實時監測。實驗發現在400生長的gasb薄膜為非晶態，溫度升高到500薄膜轉變為單晶。利用原子力顯微鏡對不同生長速率和襯底溫度生長的gasb薄膜的表面形貌進行觀察分析，並與模擬結果進行比較。 -
The x - ray diffraction data indicate that the cnx film structures are amorphous
在不銹鋼片上的cnx薄膜，雖然沒有剝落現象。 -
Ion - assisted bombardment and direct current bias were emphasized in charter ii and charter iii respectively on studying how external factor as an assisted avenue can influence the growth of amorphous carbon film
第二章和第三章分別從引入離子轟擊和施加直流偏壓電場兩方面著重研究了外界條件作為輔助手段對非晶碳生長的影響。 -
Znf16pc molecules grow on quartz substrate in a stransky - krastanov model ; a fundamental layer is laid by strong interactions between quartz and f - atoms on znf16pc, on which an amorphous transition layer develops, finally an well ordered film is obtained, " card - packing ", " amorphous accumulation " and " brick - stacking " are adopted hi three different layers
Znf _ （ 16 ） pc分子在石英襯底上的生長基本符合stransky - krastanov模型：通過f -原子與石英襯底的強相互作用形成奠基層，發展成無定型的過渡層，最後形成有序的結晶層。在這三個區域內分子分別採取「 card - packing 」 、 「 amorphousaccumulation 」和「 brick - stacking 」排列方式。 -
Furthermore, they offer a number of advantages compared to the predominant ito films nowadays : ( i ) cheap and abundant raw materials ; ( ii ) nontoxicity ; ( iii ) good stability in hydrogen plasma, which is of significance for applications related to amorphous silicon solar cell. so the study on zao film is becoming fashionable
而zno ： al （ zao ）薄膜由於具有優良的光電特性而成為ito薄膜的潛在替代材料，且它還具有原材料來源豐富、成本低廉、無毒以及在氫等離子體中具有較好的穩定性等優點，是目前研究的熱點薄膜材料之一。 -
The results showed that the microstructure of as - deposited tbdyfe ii 1ms were amorphous and the crystal of tbfe2 were found in films after annealing at 500. annealing films in vaccum could improve the saturation magnetization ms and the susceptibility, decrease the coercivity and the saturaion field, and make the direction of the magnetic moments parallel to the film plane
結果表明，制備態薄膜為非晶態結構，經過500真空退火熱處理后，薄膜出現了tbfe _ 2的結晶物，薄膜的矯頑力和外場的飽和磁場大大降低，飽和磁化強度增強，初始磁化率提高，易磁化軸轉向膜面。 -
X - ray diffraction results revealed that the structure of as - deposited smco film was amorphous and crystallization happened after the films annealed at 500 in vacuum. the magnetic tests of smco thin films showed that its coercivity reduced with the increase of film ' s thickness while the ratio of mr / ms was opposite. the films " coercivity and mr / ms declined after it annealed at 500 because the machanism of magnetization were changed from domain wall nailing into magnetic nuclear forming
研究結果表明，由於雜質fe的摻入降低了smco薄膜的磁性能；制備態smco薄膜為非晶態結構，矯頑力hc隨著薄膜厚度的增加而減小，剩磁比mr ms隨膜厚增加而增加；經過500真空退火熱處理后，薄膜出現smcos的結晶物，矯頑力hc降低， mr ms減小，磁化機制由疇壁釘扎類模型轉為形核類模型。 -
In this paper, plasma - enhanced chemical vapor deposition ( pecvd ) technique was used to deposit the dielectric p - sio2 films and p - sion films on the silicon wafer under the conditions of low temperature and low pressure with teos organic sourse. this research was focused on the evaluation of film growth, hardness, stress, resistance and refractive index, by changing the experimental parameters including rf power, substrate temperature, chamber pressure, and the flow rates of teos, o2, n2. the results showed that the p - sio2 film was smooth, dense, and structurally amorphous
實驗結果顯示，用pecvd法淀積的p - sio _ 2膜是一表面平坦且緻密的非晶質結構的薄膜，與矽片襯底之間有良好的附著性；在中心條件時生長速率可控制在2600a / min左右；在基板溫度410時有最大的硬度可達16gpa ；其應力為壓縮應力，可達- 75mpa ；薄膜的臨界荷重為46 . 5un 。 -
The films prepared under 425 ? is composed with amorphous snoi and its sheet resistance is very high. with the substrate temperature ' s increasing, the degree of crystallization, film thickness increase and electrical resistivity, sheet resistance decrease obviously. when the substrate temperature is higher than 525 ?, the temperature ' s increasing is not of benefit to the films thickness and sheet resistance
常壓熱分解cvd法制備的sno _ 2在較低基板溫度下制備出的薄膜基本上是非晶態的，方塊電阻很高；隨著基板溫度的升高，薄膜厚度增加，薄膜結晶程度提高，薄膜電阻率和方塊電阻均顯著降低；當基板溫度高於525以後，隨著基板溫度的升高，薄膜厚度基本不再明顯增加，薄膜結晶程度繼續提高，薄膜電阻率繼續降低，方塊電阻不再明顯降低。 -
The film prepared at low temperature was amorphous tio2 and it ' s photocatalysed efficiency was very low
Apcvd法在較低的基板溫度下制備出的tio _ 2薄膜基本上是非晶態的，光催化效率很低。 -
By the increasing of temperature, liyco3 - xo4 was further changed into licoo2 and lixco1 - xo, and then licoo2 formed by the reaction of lixco1 - xo with li2o. the reaction that produces licoo2 is almost completely done at 700, although some remaining li2o and li2co3 present as a partially amorphous film dispersed on the surface of licoo2, which can accelerate the growth of licoo2 crystallites. however, when temperature is higher than 850, some of licoo2 begin to decompose into the solid solution phase of liyco2 - yo2 and lixco1 - xo, and damaged its own crystal structure
制備licoo _ 2的合成反應中licoo _ 2的微結構不斷發生變化，隨著焙燒溫度升高， co _ 3o _ 4晶粒逐漸減小， licoo _ 2晶粒和顆粒逐漸長大，晶格內部缺陷減少， licoo _ 2晶格趨于完整，在焙燒溫度為850時licoo _ 2晶粒達到最大值；焙燒溫度低於700 ，晶胞參數a隨著焙燒溫度上升而減小，晶胞參數c隨著焙燒溫度上升而增大；而高於700則晶胞參數基本保持不變。 -
To hydrogenated amorphous silicon ( a - si : h ), however, it has much less defects than non - hydrogenated a - si, for the sake of much hydrogen which eliminate the defects by making a bond with non - connected si bond. with these virtue, a - si : h accord with device quality. the films of a - si : h have widely used in solar cell, film transistor and flat display
對于氫化非晶硅（ a - si : h ） ，由於氫通過無連接端的硅原子鍵合來消除缺陷，使得氫化非晶硅的缺陷密度比未氫化的非晶硅大大降低了，從而使氫化非晶硅符合器件級質量材料的要求。 -
The principle and the application of liquid crystal light valve ( lclv ) and the development of the photoconductor of lclv have been reviewed in this paper. the growth mechanism of amorphous silicon film is analyzed. the resolution of the photoconductor that is affected by the lateral diffusion of the photo - carrier in photoconductor layer is also analyzed
本文介紹了液晶光閥光導層的發展、液晶光閥的工作原理及應用，分析了非晶硅薄膜的生長機制以及載流子的橫向擴散對解析度的影響，詳細研究了nc - si a - si ： h柱狀結構復合光導層液晶光閥的制備工藝。 -
Friction - reduction mechanism of dlc gradient film could be attributed to its smooth and hard amorphous structure. the hemocompatibility of dlc gradient film had been evaluated by investigating platelet consumption ratio, blood protein adsorption and platelet adhension and morphology on surface of materials
Dlc梯度薄膜材料與ti6a14v合金材料的血小板消耗率相差不大，但是dlc梯度薄膜材料對血漿蛋白的吸附明顯低於ti6a14v合金材料，可以預料血小板在dlc梯度薄膜材料表面粘附也會較少。 -
The writer also elaborates the working principles of solar cell and various factors that may lead to bad conversion efficiency of solar cell, emphasizes on three thin film solar cells ( amorphous silicon thin film solar cell, poly silicon thin film solar cell, cuinsea thin film solar cell ), analyzes their structure, photovoltaic effect, producing techniques, and conversion efficiency etc., and discusses how to reduce the effects of sw in solar cell and how to improve the conversion efficiency
闡述了太陽電池的工作原理，論述了影響太陽電池轉換效率的因素，並重點介紹了當前研究比較深入的三種熱點薄膜太陽電池：非晶硅薄膜太陽電池（ a - si ） ；多晶硅（ poly - si ）薄膜太陽電池：銅銦錫（ cis ）薄膜太陽電池。分析了它們的結構、光伏效應、制備工藝、轉換效率等，探討了如何減小太陽電池的光致衰退效應和提高薄膜太陽電池的轉換效率的方法。 -
Compared with different inducing methods by lots of experiments, a simple and effective inducing method is confirmed, the opimal technological conditions and formula about the soluton of electroless deposition ni - p alloy are also obtaned. the influence of different technological parameters on the deposition rate is studied. analyzed the pefformance of ni - p alloy on the differen substfates and its corresponding tricture, the result is shown tha the electroless plating nickel process can obtained the ni - p alloy film having brightuess - integrity sdse, strong binding energy and high rigidity at the temperatur about 350wt00oc, the electroless plating nickel film would trallsform from amorphous to crystal state
本文通過大量實驗，對幾種誘發材料與過程進行分析，研究確定了簡便有效的誘發方法，以及與之相匹配的化學鍍ni - p合金溶液優化配方和工藝條件，討論了各工藝參數對鍍速的影響，並對銅及黃銅基體上得到的ni - p沉積層進行了性能和結構分析，得到外觀光亮完整、結合力強、硬度高的鍍層。 -
Consisted mainly of amorphous phase. hrem images showed that the ti - dlc film had a lamellar structure. the tic phase with a size of 5 nm was located at the titanium - rich regions surrounded by amorphous carbon structures in the ti - dlc film
Ti - dlc膜的結構主要為非晶相，高分辨電子顯微鏡分析（ hrem ）表明ti - dlc膜成層狀分佈，膜內存在著富ti區和貧ti區， tic顆粒尺寸大約為5nm 。
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