annealing room 中文意思是什麼

annealing room 解釋
退火車間
  • annealing : 熱處理
  • room : n 1 室，房間。2 場所，席位，位置，地位，空間。3 餘地，餘裕；機會。4 〈pl 〉一套房間；寄宿舍；出租...
  1. This equipment is the key of producing arc glass and laminated glass of shower bath room. it lets the flat glass changing its arc shape by drying, bending and annealing

    本設備是生產汽車弧形、沐浴房夾層玻璃製品的關鍵設備。通過對平板玻璃的烘彎、退火，使之彎曲成玻璃製品所需要的各種弧度和形狀。
  2. By sims method, we analyzed the profile distribution of mn and c, found that increasing the annealing temperature is beneficial to the diffusion of mn, but has no influence to c. mfm and squid measurements demonstrate that sub micron single - domain magnetic mnas particles found in sample annealing at 850 for 15s show ferromagnetism at room temperature and have a high curie temperature more than 300k

    利用二次離子質譜方法對mn和c在樣品中的分佈進行了研究，發現退火溫度的上升，有利於mn的擴散；而對c的分佈影響較小。利用磁力顯微鏡和超導量子干涉儀對樣品的磁性質進行了研究。發現在850 + 15s退火處理的樣品中形成了亞微米級單疇磁性mnas粒子；經測試其在室溫下呈現出鐵磁性，居里溫度在300k以上。
  3. The ultra - thin er layers with the thicanesses in the range of 0. 5 ~ 3 monolayer ( ml ) are formed by electron beam evaporation on si ( 00l ) substrate at room temperature in an ultra - high vacuum system. after annealing at lower temperatures, ordered simcfores form on the surface. the trallsition of the surface reconsmiction pattem from ( 2 x l ) to ( 4 x 2 ) with the increase of er coverage up to l ml is observed by the reflective high energy electron diffraction ( rheed ) and low energy electron diffraction ( leed )

    本文是關于硅（ 001 ）襯底與電子束淀積的鉺、鉿原子反應形成的超薄膜的界面與表面性質的研究，以及在該襯底上出現的共振光電子發射現象，包括了以下四個方面的工作： 1鉺導致的硅（ 001 ）襯底上的（ 4 2 ）再構研究利用反射高能電子衍射和低能電子衍射，在室溫淀積了0
  4. We measured the samples " electrical properties ( square resistance, square carrier concentration, carrier mobility and hall coefficient ) at room temperature by hall measurement. the experimental results revealed that all the samples are p - type, with increasing the annealing temperature, the carrier mobility increased and the square carrier concentration decreased. these changes in electrical properties are explained by a decrease in the number of mn acceptors because of the forming of mnas phase and the resuming of lattice defects during annealing

    所有樣品均為p型導電類型；發現在650到850溫度范圍內，隨著退火溫度的升高，樣品的方塊載流子濃度呈下降趨勢，而載流子遷移率呈上升趨勢；這是由於在退火過程中，隨著退火溫度的升高，有更多的mn參與mnas相的形成，使得以替位受主形式存在的mn減少，並且晶格缺陷得到恢復所致。
  5. Quantum confinement effects of semiconductor nanocrystals cdsaiseo9 in glass abstract a series of cds0. iseo. 9 semiconductor nanocrystals embedded in silicate glass with different sizes have been fabricated by one - step and two - step annealing methods. the electronic state and optical properties of these nanocrystals also have been studied through room - temperature absorption spectra and electroabsorption spectra

    本文用一步退火和兩步退火方法在玻璃基體中生長了一系列不同尺寸的cds _ （ 0 . 1 ） se _ （ 0 . 9 ）半導體納米晶體。對制備的納晶樣品作了室溫吸收光譜和電調制吸收光譜的測量，以此研究了納晶的電子結構及光學性質。
  6. Another possible reason for this phenomenon is that with higher temperature, the mobility near defects of carbon atoms in grown carbon nanotubes would be also elevated, which gave carbon atoms higher mobility and have chance to readjus to decrease or eliminate some defects. a series of pretreatments and modifications including purification, annealing and doping were performed before hydrogen storage experiments carried out at room temperature under modest pressure ( 12mpa )

    在氮氣中進行退火處理納米碳管的儲氫性能高於在空氣中退火的納米碳管，主要原因是在空氣中退火時，納米碳管的表面引入了大量的氧官能團，而氧官能團能夠占據納米碳管的缺陷位，減少了氫的可吸附位置，阻礙氫進入納米碳管，從而降低了納米碳管的儲氫能力。
  7. The processing parameters of preparing plzt electro - optic films were 400 of substrate temperature, 100w of sputtering power, 1 : 6 ratio of oxygen to nitrogen and 650 of annealing. the processing parameters of preparing sno2 film were room temperature of substrate temperature, 200w of sputtering power, 1 : 2 ratio of oxygen to nitrogen and 600 of the annealing temperature

    制備plzt電光薄膜的最佳工藝參數為:襯底溫度400 ，濺射功率100w ，氧氬比為1 : 6 ，退火溫度為650 ;而制備二氧化錫透明電極的最佳工藝參數為:襯底溫度室溫、濺射功率200w 、氧氬比為1 : 2 、退火溫度為600 。
  8. When irradiation response and dose are linear, total dose radiation and post - irradiation annealing at room temperature are determined for one random by choosing absorbed dose rate, and total dose effect at other absorbed dose rate can be predicted by using linear system theory

    研究結果表明，輻射響應與吸收劑量成線性關系時，在實驗室選用任一特定劑量率進行總劑量輻射和輻照后室溫退火，可以通過線性響應理論模擬其它劑量率輻射下的總劑量效應。
  9. Ohmic contacts on h2 - thermally - treated 6h - sic surface by evaporating aluminum without annealing have contact resistances of 8 10 - 3 - cm2 on room temperature and keep fairly good thermal stability under the temperature of 400. its ohmic properties do n ' t depend on the doping concentrations of the substrate, which enables us to form ohmic contacts on low dropped substrate especially on epitaxial layer

    通過氫氣處理6h - sic表面並鍍鋁后直接形成的歐姆接觸室溫比電阻率達到8 10 ~ （ - 3 ） ? cm ~ 2 ，溫度不超過400時該接觸具有較好的穩定性，其歐姆特性不依賴于襯底的摻雜濃度，是一種適宜在低摻雜襯底特別是sic外延片上制備歐姆接觸的有效方法。
  10. In order to accomplish the main targets, the following jobs were done : the annealing of ct20 alloy tube at 6 different temperatures was carried out and the specimens with different microstructure were tested at room temperature ( rt ) and 20k. the tensile fractures were analyzed by means of sem and tem. the c t20a alloy specimens with 3 kind of oxygen equivalent ( oeq ) were prepared, and the tensile properties at rt and 20k, the impact toughness at rt and 77k were tested

    為了研究顯微組織和間隙元素含量變化對兩種合金低溫塑韌性的影響，研究中主要作了如下工作：對ct20合金管材進行了六種溫度的退火處理，測試了不同組織試樣的室溫和20k拉伸性能，對拉伸試樣取樣進行sem和tem分析；制備出了ct20a合金三種氧當量實驗樣品，測試了相應試樣的室溫和20k拉伸性能以及室溫和77k沖擊性能，並取樣進行sem和tem分析；在以上工作的基礎上，對近鈦合金的低溫塑韌性機理進行了探討。
分享友人
分享到 Line

分享到臉書