annealing temperature range 中文意思是什麼

annealing temperature range 解釋
退火溫度范圍
  • annealing : 熱處理
  • temperature : n. 1. 溫度，氣溫。2. 體溫。3. 〈口語〉發燒，高燒。
  • range : vt 1 排列；整理（頭發等）。2 使歸類[班、行、隊]；把…分類。3 〈用被動形或反身形〉加入，站住…的一邊...
  1. The properties of lacamno3 films were enhanced dramatically with a post annealing treatment in high temperature and high oxygen pressure. the films show the highest so far tmi, which reaches the 300k, the transition of resistivity is kept in a narrow temperature range and the temperature coefficient of resistance ( tcr ) is about 5 - 8 %

    以高溫、高氧壓的條件對薄膜進行後退火處理，薄膜性質得到極大改善，轉變溫度點提高到了300k ，電阻?溫度系數也達到了5 - 8 ，不僅提高了轉變溫度點，而且使轉變保持在一個較窄的溫度區間內。
  2. The ultra - thin er layers with the thicanesses in the range of 0. 5 ~ 3 monolayer ( ml ) are formed by electron beam evaporation on si ( 00l ) substrate at room temperature in an ultra - high vacuum system. after annealing at lower temperatures, ordered simcfores form on the surface. the trallsition of the surface reconsmiction pattem from ( 2 x l ) to ( 4 x 2 ) with the increase of er coverage up to l ml is observed by the reflective high energy electron diffraction ( rheed ) and low energy electron diffraction ( leed )

    本文是關于硅（ 001 ）襯底與電子束淀積的鉺、鉿原子反應形成的超薄膜的界面與表面性質的研究，以及在該襯底上出現的共振光電子發射現象，包括了以下四個方面的工作： 1鉺導致的硅（ 001 ）襯底上的（ 4 2 ）再構研究利用反射高能電子衍射和低能電子衍射，在室溫淀積了0
  3. Experimental results revealed that the carrier mobility increased with increasing of the annealing temperature, in the range of the annealing temperature from 650 ? to 850 ?, which implied that the crystal lattice structure was damaged by ion implantation and restored after annealing. furthermore, the square carrier concentration decreased, and the square resistance of the samples implanted by mn + and c increased with the raising of annealing temperature. these results indicated that the second phase such as mnga, mnas ferromagnets was formed by more mn + ions with increasing of the ( gaas ) annealing temperature, so the mn + ions which can provide carriers decreased

    由實驗結果可以知道在退火溫度為650 850范圍內，樣品的載流子遷移率隨著退火溫度的提高呈上升趨勢，說明雜質元素的注入對樣品造成晶格損傷，但退火對這些損傷具有修復作用；此外，隨著退火溫度的上升，樣品的方塊載流子濃度不斷下降，加c樣品的方塊電阻不斷上升，這都是因為隨著退火溫度的提高，摻入的mn ~ +離子不再提供載流子，而是形成了mnga 、 mnas等磁性第二相。
  4. As annealing temperature is 400, the phase of fexsy is greigite ( fe3s4 ) the fexsy particles cover the porous film of tio2. the average size of fexsy particles range from 5000nm to 20nm as the concentration of the starting solution decreasing. after five times of coating - annealing process, fexsy particles form aggregate in size of 10 m

    鐵硫化合物顆粒覆蓋在多孔tio _ 2基底上，顆粒尺寸隨著初始溶液濃度減小從幾個微米減小到十幾個納米，隨著塗膜厚度、退火時間增加，鐵硫化合物的形貌按顆粒狀島狀層狀變化。
  5. The relationship between sputtering conditions and the depositional speed shows : with working pressure 1. 2 pa, sputtering power 180w, the depositional speed of tio2 thin film is 40nm / h, and increases with the increasing of sputtering power. it can be also founded that the depositional speed is nearly proportional to the working pressure : within the range of 0. 3pa to 1. 6pa, the depositional speed increases linearly with the increase of ar pressure. with the enhancement of the substrate ' s temperature of sputtering or annealing, the resulted thin films show a tendency of decreasing in thickness, and increasing in refractivity

    本實驗是採用磁控濺射方法，在不同的溫度下制備了tio _ 2薄膜，並對薄膜進行了不同溫度和時間的退火處理，通過原子力顯微鏡（ afm ） 、 x射線衍射（ xrd ） 、掃描電鏡（ sem ）等檢測手段對薄膜的表面形貌和組成結構進行了分析，結果如下： （ 1 ）濺射工藝條件與薄膜沉積速度的關系表明：採用1 . 2pa工作氣壓， 180w的射頻功率tio _ 2薄膜的沉積速率為40nm h ，並隨射頻功率的增加而提高，呈近似的線性關系，在0 . 3pa 1 . 6pa氣壓范圍中，氬氣壓強升高沉積速率迅速增加，濺射溫度提高和退火處理能使薄膜的厚度減小和折射率提高。
  6. Abstract : to decrease nonspecific products and obtain clear rapd patterns, 18 10 - mer random primers were tested at different annealing temperatures. the results indicated that all the amplification can be performed when the annealing temperature is in the range of 40 ~ 50. there were a few primers with which the amplification was still performed when the annealing temperature is above 60. by using high annealing temperatures, some primers which produce more nonspecific product at the annealing temperatures of 35 ~ 38 could generate reproducible and distinct bands

    摘要用38 66不同復性溫度處理，比較了18條隨機引物的擴增結果.發現復性溫度在40 50之間均有數量不等的擴增產物，不同引物的最高復性溫度不同，有些引物用60以上的復性溫度仍有擴增產物.一些在35 38的復性溫度下非特異性產物較多的引物，通過大幅度提高復性溫度，能提高擴增產物的特異性，獲得清晰的rapd帶型。
  7. In the same way, the ncz silicon with nitrogen - oxygen complexes was annealed by rtf at range of 750 - 950 ? for different time to detect the change in resistivity. we found that nitrogen - oxygen complexes were annihilated with less time and lower temperature than conventional annealing method

    同樣，我們將650oc ， zh處理生成氮氧復合體的微氮矽片在750 950c范圍內進行不等時的rtp處理，觀察電阻率的變化，確定了最佳的氮氧復合體消除溫度和時間。
  8. In contrast, the lcmo thin films grown on lao substrates show an in - plane compressive stress. the afm images suggest that at the annealing temperature range between 650 and 750, with the annealing temperature increase, the grain sizes increase, the rms increase

    沉積在sto基片上的lcmo薄膜在面內方向受張應力作用，垂直方向上的晶格常數相對縮小，沉積于lao基片上的lcmo薄膜在面內方向受壓應力作用，垂直方向上的晶格常數相對增大。
  9. In this experiment, thermal donor in cz silicon generated by 450 ? annealing for 32 hours was eliminated by rtf at range of 600 ~ 700 ? for different time. furthermore, the permit temperature and time for annihilation of thermal donor by rtf was found

    實驗中將450oc ， 32h處理生成熱施主的普通cz矽片在600oc 700oc范圍內進行不等時的rtp處理，觀察電阻率的變化，從而確定最佳的rtp消除熱施主溫度和時間。
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