boundary layer edge 中文意思是什麼

boundary layer edge 解釋
邊界層邊緣
  • boundary : n 邊界,疆界,限界 (between);(球場)邊線;界標;界限,范圍,分野。 aboundary dispute 邊界糾紛...
  • layer : n 1 放置者,鋪設者,計劃者。2 【賽馬】(一般)賭客。3 產卵的雞。4 【軍事】瞄準手。5 層;階層;地...
  • edge : n 1 刀口,(刀)刃;鋒;端;銳利。2 邊,棱,邊緣,邊界,界線,界限。3 優勢,優越條件。4 (聲調、...
  1. The vortex simulated in this article include the shedding vortex induced by the vane trailing edge boundary layer, the endwall vortex generated by the endwall boundary layer interaction, the passage vortex generated by the rotor rotation, and the leakage vortex generated by the tip clearance flow

    渦輪級內的渦運動包括:導向器葉片尾緣附而層引起的脫落渦;轉子通道內轉子的旋轉運動產生的通道渦;根腳區兩個端壁附面層干涉,形成的根腳渦;存在葉尖漏流時,出現的漏流渦。
  2. The radiation problems of microstrip antennas residing in a cavity are analyzed by the edge - based fem with perfectly matched layer ( pml ) absorbing boundary condition ( abc )

    將edge七asedfem與完全匹配層吸收邊界條件相結合,分析了背腔式微帶天線和背腔式分形微帶天線的電磁輻射特性。
  3. According to the theory of boundary layer control and aerodynamics of delta wing at medium attack angle, the generation mechanisms of rolling, pitching, yawing moments, which are produced by coupling between the microactuator array and boundary layer near the leading edge, have been discussed

    首先,結合空氣動力學的邊界層控制原理以及三角翼在中等攻角條件下的氣動特徵,詳細討論了微致動器陣列通過與前緣邊界層的耦合產生三角翼翻滾、俯仰和偏航等力矩的機理。
  4. According to the requirement of innovation engineering in chinese academy of sciences, the work in this thesis focused on fabrication of soi material with epitaxial layer transfer of porous silicon and study of luminescence of modified porous silicon, and we obtained the following new results : the effect of doping and anodizing condition on the properties of porous silicon, including the microstructure, ciystallinity and surface morphology, has been studied systematically. it is found that the porous silicon and substrate have the same orientation and share a coherent boundary. but at the edge of pores, the lattice relaxes, which induces xrd peak moving of porous silicon

    Soi技術和多孔硅納米發光技術研究是當今微電子與光電子研究領域的前沿課題,本文根據科學院創新工程研究工作的需要,開展了多孔硅外延層轉移eltran - soi新材料制備與改性多孔硅發光性能的研究,獲得的主要結果如下:系統研究了矽片摻雜濃度、摻雜類型和陽極氧化條件等因素對多孔硅結構、單晶性能和表面狀態的影響,發現多孔硅與襯底並不是嚴格的四方畸變,在多孔硅/硅襯底的界面上,多孔硅的晶格與襯底完全一致,但在孔的邊緣,多孔硅的晶格發生弛豫。
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