buffer layer 中文意思是什麼
buffer layer
解釋
緩沖層-
The quality of buffer layer and thin films was analyzed by afm, xrd, rheed and xps respectively. the effect of the experimental parameters such as carbonization time, working pressure, c source gas flow rate, carbonization temperature, different carbonization gas and substrate on the carbonization process was studied firstly. it was observed that the size of particles was increased with the increase of carbonization time and the rms was opposite, but the trend was reduced while the carbonization time was long enough ; the size of particles was increased with the increase of working pressure too, and choosing a proper working pressure could get a smooth surface ; the size of particles was unobviously changed while the gas flow rate was low, but it was notability increased with the increase of gas flow rate while the gas flow rate was high enough, and a smooth surface could be also obtained by choosing a proper gas flow rate ; with the increase of carbonization temperature, the size of particles was increased, the rms is decreased and a good single - crystalline carbonization layer could be obtained, but a rough surface was formed at a excessive high temperature ; the rms of
對于碳化工藝，側重研究了碳化時間、反應室氣壓、 c源氣體的流量、碳化溫度以及不同種類的c源氣體、基片取向等因素對碳化層質量的影響，研究結果表明:隨著碳化時間的增長，碳化層的晶粒尺寸隨之變大，表面粗糙度隨之降低，但當碳化到一定時間之後，碳化反應減緩，碳化層的晶粒尺寸以及表面粗糙度的變化幅度變小;碳化層的晶粒尺寸隨反應室氣壓的升高而變大，適中的反應室氣壓可得到表面比較平整的碳化層;在c源氣體的流量相對較小時，碳化層的晶粒尺寸隨氣體流量的變化不明顯，但當氣體流量增大到一定程度時，碳化層的晶粒尺寸隨氣體流量的增大而明顯變大，同時，適中的氣體流量得到的碳化層表面粗糙度較低;碳化溫度較低時，碳化層的晶粒取向不明顯，隨著碳化溫度的升高，碳化層的晶粒尺寸明顯變大，且有微弱的單晶取向出現，但取向較差，同時，適中的碳化溫度可得到表面平整的碳化層;相比于c _ 2h _ 2 ，以ch _ 4作為c源氣體時得到的碳化層表面平整得多;比起si （ 100 ） ，選用si （ 111 ）作為基片生長的碳化層的晶粒取向一致性明顯更好。 -
Aln is an important compound semiconductor material with wide band - gap, which has wurtzite structure too. because of their many excellent physical properties, aln thin films were applied in blue - uv emitting materials, epitaxy buffer layer, soi material and saw device with ghz band
Aln具有許多優異的物理性能，在藍光、紫外發光材料及熱釋電材料、外延過渡層、 soi材料的絕緣埋層和ghz級聲表面波器件等方面有著重要的應用。 -
For the preparation of coated conductors, one of the most important issues is the growth of seed layer ( the first buffer layer ), which provide a continuous, smooth, and chemically inert surface for the growth of the ybco film while transferring the biaxial texture from the substrate to the htsc layer
在二代塗層導體中，第一層過渡層（也稱為種子層）起著順延織構和阻擋基帶與超導層之間互擴散的重要作用，因此，種子層是塗層導體制備的關鍵。 -
2 、 in order to solve the phenomenon of the outdiffusion of the base dopant, two solutions are suggested : 1 ) the sige : c base can effectively solve the outdiffusion problem ; 2 ) the undoped buffer layer can constrict the outdiffusion phenomenon
2 、為了解決基區雜質外擴現象，提出了兩種方案: 1 ）採用摻碳的sige : c基區層，能夠有效消除外擴問題; 2 ）採用未摻雜的緩沖層i - sige ，能夠有效抑制外擴現象。 -
The middle class is a buffer layer in the structure of social interests
中間階層是社會利益結構中的緩沖層。 -
The layers from substrate to top of the deposited film are ti substrate, buffer layer ( interface between substrate and film ), porous layer and lamellar layer
研究發現，從鈦合金到羥基磷灰石共有四層結構：鈦合金基體、鈦合金的氧化層、多孔的納米晶羥基磷灰石和花瓣狀的結晶良好的羥基磷灰石。 -
In the present thesis, znse, znte and their quantum well ( qw ) structures on si substrates with zno as buffer layer by low pressure metal - organic chemical vapor deposition ( lp - mocvd ) technique were prepared. zno is selected as the buffer layer for it has many similarities with the oxide layer on the surface of si wafer. all important experimental results and conclusions presented in this thesis are summarized as follows : 1
本文中，我們利用zno與si襯底上氧化層? sio _ x有很好的浸潤性這一特點，採用zno作為緩沖層，用低壓-金屬有機物氣相沉積（ lp - mocvd ）設備在si襯底上生長znse和znte薄膜以及zncdse znse和zncdte znte量子阱結構，並對其發光特性進行了研究，獲得的主要研究結果如下： 1 、在si襯底上獲得了較高質量的zno薄膜。 -
With optimized buffer layer growth parameters, gan epilayer with improved quality has been grown, whose fwhm of ( 0002 ) plane dc - xrd rocking curve is 6 arcmin
以優化的緩沖層生長條件得到質量有明顯改善的gan外延層， gan薄膜的（ 0002 ）面雙晶dc - xrd掃描的半高寬為6arcmin 。 -
The intrinsic carrier concentration reduces when decreasing the v / iii ratio. the high quality of in0. 53gao. 47as can be obtained at the range of 10 - 30 seconds of exchange time between ashs and phs. when the thickness of the buffer layer between the inp substrate and ingaas epilayer is 0. 2 um the mobility becomes the maximum and the carrier concentration is the lowest
/比對外延層的表面形貌有較大影響，增大/比有利於提高材料的結晶質量；隨著/比增加，遷移率升高；本徵載流子濃度隨著/比減少而降低； ash _ 3和ph _ 3轉換時間在10秒到30秒之間可以獲得質量較好的ingaas外延層；在inp緩沖層厚度為0 . 2 m時遷移率達到最大，載流子濃度達到最低。 -
Based on prandtl ' s momentum transportation, this paper calculates in detail the physical quantities such as eddy viscosities, and ratio of eddy viscosity to motion viscosity, total stresses with respect to relative position in three regions of viscous sub - layer, buffer layer, and main turbulent stream for non - newtonian fluid flowing turbulently in ducts, which according to karman ' s three layer models and measurement of fluid parameters in evaluation apparatus, discusses the influence of polymer drag reduction on flowing properties of non - newton fluid, analyzes quantitatively principle of turbulent reduction phenomenon and condition of increasing reduction rate
摘要以普蘭德動量傳遞理論為基礎，按照卡門的三層模型，通過室內模擬環道用0號柴油及加入減阻劑在圓管內的流動參數的測定，計算了非牛頓型流體管內湍流邊界層的層流內層、過渡層、湍流中心的渦流粘度，渦流粘度與運動粘度比、總應力隨相對位置的變化等定量參數，探討了高分子減阻劑對非牛頓流體流動特性的影響，對湍流減阻現象的機理與增大減阻率的條件進行了定量分析。 -
Under high drain voltage condition, the results proved that channel electrons are easily ejected into gan buffer layer and be trapped to induce current collapse
在大漏極電壓條件下，溝道電子易於注入到gan緩沖層中，並被緩沖層中的陷阱所俘獲，耗盡二維電子氣，從而導致電流崩塌效應。 -
In the new structure, a n + buffer layer is introduced into the bulk silicon substrate with a triple - diffusion process. the new structure has two features : one is the feature of npt - igbt : the thin and lightly - doped p + layer and the high lifetimes of the carriers ; the other is the feature of pt - igbt : n7n + structure which can make the n " region very thin
新結構用三重擴散的方法在n ~ -單晶片上引入了n ~ +緩沖層，仍然保留了npt - igbt中薄而輕摻雜p層和高載流子壽命的本質優點，同時又具有pt - igbt中n ~ - （ n ~ + ）雙層復合的薄耐壓層（即薄基區）的優點。 -
The product is separated from the principle of suction by the absorption layer, a buffer layer, integrated sound insulation layer formed
該產品採用外隔內吸的原理，由吸聲層，緩沖層，隔聲層綜合而成。 -
It has been shown by our calculations that conductor loss is greatly reduced under velocity matching with relatively thick coplanar waveguide electrodes and thick buffer layer, but the characteristic impedance can not match with that of the external circuit at the same time, and the modulation bandwidth is confined in this case
然後，用一般的橢圓積分計算了普通共面波導型調制器的有效折射率、特徵阻抗和導體損耗系數。通過計算發現，採用厚電極和厚緩沖層結構，在實現速度匹配的情況下，可以大大減小導體損耗，但是由於阻抗不能同時滿足匹配，調制帶寬受到限制。 -
The high density dislocations behave like deep - level donors and the dislocations scattering is considerable at low temperature especially. besides, when the insb buffer layer thickness became 80nm, the roughness of insb epilayer increased. the initial stage of insb growth on gaas substrate is
透射電子顯微鏡發現，在insb / gaas薄膜的界面處分佈有間距為3 . 5nm的失配位錯陣列，界面處的高密度位錯可體現出類似深能級施主的特性，尤其在低溫下對載流子散射更加顯著。 -
In order to deal with large mismatch ( 14. 6 % at room temperature ) between gaas and insb, a insb buffer layer was deposited firstly at low temperature 350, followed by a insb epilayer being deposited at higher temperature 440
為了克服insb與gaas間14 . 6 %的晶格失配度，實驗設計先低溫生長一定厚度的insb緩沖層，隨后升溫生長insb外延層。 -
In addtion, the growth rate of low temperature insb buffer layer was 0. 26 m / h, which was obtained by rheed intensity oscillation curves. growth temperature of insb epilayers were investigated with sem and dcxrd, and it was found that the optimum temperature was 440. a 2. 1 m insb layer grown at 440 had an x - ray rocking curve of 412 arcsec, the strain relaxtion was about 99. 02 %
通過掃描電鏡形貌觀察與能譜分析發現:溫度較低時sb的表面遷移率低，容易在表面堆積;結合x射線雙晶衍射分析，確定高溫insb外延生長的最佳襯底溫度為440 ，該溫度下生長2 . 1 m的樣品x射線半高峰寬為412 ，應變弛豫99 . 02 % 。 -
Otherwise, using the ta buffer layer can effectively reduce the surface roughness. in addition, measured by our measurement system, the polycrystalline the film has similar negative magnetoresistance effect to single - crystalline film, so it is potential to be applied in spintronic devices
通過磁電子輸運測試系統研究制備的薄膜還發現多晶fe _ 3o _ 4具有同單晶fe _ 3o _ 4類似的負磁電阻特性，因此有望將多晶fe _ 3o _ 4薄膜應用到自旋電子器件中。 -
In order to increase the thickness and improve the quality of sputtered films, low deposition rate and 30nm ta buffer layer on substrate have been adopted. as a result, 3 u m single films and 2. 6 u m / 2. 6 u m 72. 6 u m sandwiched films have been successfully prepared
通過降低濺射速率和在基底上沉積30nm的tabuffer （緩沖層） ，解決了難以濺射生長厚膜的問題，成功制備了厚度3 m的單層膜和每層厚度2 . 6 m的三明治膜。 -
Carrier aggregation on the interface between organic layer and electrodes may screen extra electric field and reduce barrier height for carrier injection. ( 3 ) we utilized oxd as buffer layer in anode and lif in cathode in single layer mehppv pleds. and the efficiency and brightness was doubled. the results implied that aggregation of minority carriers at the interface may the role of blocking layer
（ 3 ）在單層mehppv器件的陽極引入oxd作為電子阻擋修飾層， lif作為陰極修飾層，利用阻擋少數載流子實現界面電荷積累的方法提高了器件發光亮度和效率，分析了器件電流電壓特性，使器件發光效率和亮度提高了一倍以上。
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