circuit substrate 中文意思是什麼
circuit substrate
解釋
電路襯底-
Experimental results show that the bistable of tuned substrate self - bias was determined by discharge gas pressure, discharge power and tuning circuit parameters etc. the bistable exists is because of there is capacitive coupling in icp system and sheath capacitance is nonlinear
實驗結果表明這種跳變回滯現象與等離子體的放電氣壓、射頻功率以及調諧外電路的參數等多種因素密切相聯系。而產生跳變回滯現象的原因是icp中存在容性耦合以及鞘層電容具有非線性特性。 -
A new type thick - film circuit heatin g - element is introduced and the main technology is expounded, including the requireme nt and performance of substrate mate rial and electro - pastes. the process of heating - element is intro duced too. at last, the application a nd problem of the new type heating - element are put forward
介紹了基於不銹鋼基板的大功率密度厚膜電熱元件的研究現狀，並對厚膜電路式電熱元件的關鍵技術進行闡述，包括大功率密度電熱元件所用基板材料和基於基板的電子漿料的使用要求，以及電熱元件的制備工藝;最後分析了該新型電熱元件的應用前景和所要解決的問題。 -
On the other hand, waveguide could compose high quality components but hard to be integrated for their huge volume. substrate integrated waveguide ( siw ) is a new kind of microwave transmission line in these years which can be widely used in microwave and millimeter wave circuit
基片集成波導（ substrateintegratedwaveguide ，簡稱siw ）是一種近年內出現的新型微波傳輸結構，可以廣泛地應用於微波及毫米波電路中 -
Gaas crystal is a kind of iii - v group compound semiconductor material with good electrical performance. the semiconductor devices and integrated circuit ( ic ) fabricated on gaas substrate have such advantages of hign - speed information processing that they have drawn the researcher ' s attention
Gaas晶體是一種電學性能優越的-族化合物半導體材料，以其為襯底製作的半導體器件及集成電路，由於具有信息處理速度快等優點而受到青睞，成為近年來研究的熱點。 -
A combination of connected elements inseparably associated on or within a single continuous substrate to perform an electronic circuit function
在一片基片上或基片中，將相關的不可分離的元件連接在一起的組合電路，用以實現某種電子電路功能。 -
By reducing bromine content and adding aluminum hydroxide in the surface of substrate for the printed circuit board, comparative tracking index ( cti ) of the substrate is improved significantly, meanwhile the size stability, heat resistance, the glass transition temperature of the substrate are improved too
摘要通過降低印製電路板的基板表層的嗅含量並加入氫氧化鋁，顯著提高了基板的相比漏電起痕指數（ cti ） ，並同時提高了基板的尺寸穩定性、耐熱性、玻璃化溫度。 -
Many measures were adopted to decrease bombard in order to improve the solar cells propertivity, such as decreasing target voltage, increasing target distance, accelerating the movement of the substrate. by optimizing the experimental conditions, short - circuit current was increased by 3. 7ma / cm2, the conversion efficiency was increased by 2 %, the stability was improved
在硅薄膜電池的zno ： al al背反射電極應用方面，通過減小靶電壓、適當增加靶距和基片的運行速度來減小對電池的轟擊，改善電池性能，通過優化實驗條件，使電池的短路電流提升了3 . 7ma cm ~ 2 ，效率增加了2 ，穩定性得到改善。 -
Main materials of printed circuit board ( pcb ) substrate were macromolecule resins, which were typical viscoelatic materials
電路板基板材料主要以高分子樹脂為主，是典型的黏彈性材料。 -
The macromodel is built up with the combination of device simulation and nonlinear curve fit, which makes the extraction of the substrate parasitic parameters more convenient and the circuit simulation more accurate
該宏模型通過器件模擬與非線性擬合相結合的方法建立，使襯底寄生參數的提取更加方便，同時保障了深亞微米電路特性的模擬精度。 -
The arrayed - waveguide grating ( awg ) bases on the planar linear circuit technology of si substrate has two elementary functions : one is multi / demultiplexer, the other is static wavelength router
基於si基片的平面波導迴路技術的陣列波導光柵（ awg ）具有兩個基本的功能：復用解復用功能以及靜態路由功能。 -
Up to present we have prepared the epitaxial simox substrate ( i layer 0. 37um, silicon layer 2. 8um ), and done the circuit design, process integration, device simulation and some layout design )
本項目目前已完成了simox外延襯底的制備（ i層0 . 37um ，外延硅層2 . 8um ） ，以及功率開關集成電路的電路設計，工藝設計和部分版圖設計。 -
The inductor, which is one of the most important magnetic components, is not only used in lc filter and choke but also in rf communication circuit. the thin film inductor can be integrated with semiconductor components, so far it has not been widely used in these fields, the reason is the limited of thin - film material and substrate, process technology and design technology. designing and fabricating thin film inductor is the key point of this paper
而作為磁性元器件中最重要的電感，它不僅在lc濾波電路、扼流圈中必不可少，在現代射頻通信電路中也被廣泛使用，特別是能與硅器件一起集成的薄膜電感器，在國際上備受重視，而國內長期以來，由於受薄膜磁芯材料、繞組材料、基片材料，包括製作技術及最為關鍵的設計技術限制，尚未研發出能夠用於這一應用領域的高、中、低頻薄膜電感器。 -
Especially, mesfet devices fabricated on lec si - gaas substrate have been adopted into very large - scale integration ( vlsi ) and monolithic microwave integrated circuit ( mmic ) extensively. therefore, it is necessary to study the influence of defects in substrate material of lec si - gaas on performance of mesfet to meet the need of design and fabrication of gaas ic
以液封直拉半絕緣gaas為襯底的金屬半導體場效應晶體管（ mesfet ）器件是超大規模集成電路和單片微波集成電路廣泛採用的器件結構，因此研究lec法生長si - gaas （ lecsi - gaas ）襯底材料特性對mesfet器件性能的影響，對gaas集成電路和相關器件的設計及製造是非常必要的。 -
With the development and application of the microwave communication system 、 precision guided technologies and electronic countermeasure etc, the research on dielectric materials such as circuit dielectric substrate 、 antenna unit dielectric substrate and radome are paid more and more attention
隨著毫米波通信系統、精確制導、電子對抗等技術的發展和應用，對電路介質基片、天線單元介質襯底、天線罩等介質材料的研究越來越受到重視。 -
Substrate slices of uniform electrical properties are necessary for integrated circuit device fabrication. at present there are variations in electrical properties across substrate slices. these are associate with deep levels, in particular el2, which is generally attributed to antisite defect complexes and considered to be related to grown - in dislocations formed by thermal stresses
研究證明， si - gaas襯底電學特性的不均勻與材料中深能級微缺陷，特別是el _ 2 （深能級施主，被認為是as的反位缺陷的復合體）有極大的關系，而這些深能級微缺陷又與熱應力形成的長入位錯有密切聯系。 -
A type of two layers pbg structure band stop filter with holes in the substrate is introduced in this paper, it detaches the substrate and microwave circuit, which solves the problem of placing microstrip line and helps to manufacture and amend, both the simulation result with hfss and measurement results are given out to identify its possibility
摘要本文介紹了一種雙層結構的基於襯底打孔的pbg結構帶阻濾波器，採用了周期結構與微帶電路分離的設計，解決了傳統的打孔結構的導帶加工問題，並且有利於電路的加工和修改。 -
Our research group first developed tuned substrate experiment in an icp system. a lc resonance circuit was connected to the substrate, and it is found that there were bistable, jumped delay phenomena in substrate self - bias
我們研究小組首次在icp （ inductivecouplingplasma ）中進行了射頻調諧基片偏壓實驗，並且觀察到基片偏壓的雙穩、跳變回滯現象。 -
The temperature sensing circuit adopts current - output mode taking pnp substrate transistor as temperature sensing device. according to the theory of the bgr, ptat and ctat can be generated from the circuit, and the former one is regarded as the initial signal which correlating to the temperature
溫度傳感電路以襯底pnp型bjt作為感溫元件，採用電流輸出模式，按照帶隙基準原理獲得與絕對溫度成正比（ ptat ）電流以及與絕對溫度成反比（ ctat ）電流，並以前者作為與溫度相關的原始電信號。 -
A silicon self - aligned technology was achieved by using a smart power integrated technology to get high power of the circuit. vertical pnp transistor whose base is epitaxy layer was used as output. the collector of the vertical pnp transistor was set on the back of the chip with low resistance p + substrate as ohm contact
在工藝中，採用了smart功率集成技術實現電路的大功率，基區是外延層的縱向pnp晶體管作為輸出，將集電極置於晶元背面，採用低電阻率p ~ +襯底作為歐姆接觸。 -
And for analog applications by adding a normally - on nmosfet in series with the n - mosfet in an analog circuit respectively. according to spice3f5 and bert2. 0 simulation results, the substrate current of new structure cmos inverter is suppressed to about 50 % of its original value and good hot - carriers resistant behaviors are obtained without adding any extra delay
0對倒相器的模擬結果表明：新型cmos數字電路結構結構使襯底電流降低約50 ，器件的熱載流子退化效應明顯改善而不會增加電路延遲；巳該電路結構中肖特叢一級管可在nmosfet漏極亙接製作肖特基金半接觸來方便地實現，工藝簡單又無須增加晶元而積。
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