current degradation 中文意思是什麼
current degradation
解釋
電諒降- current : adj. 1. 通用的，流行的。2. 現在的，現時的，當時的。3. 流暢的；草寫的。n. 1. 水流；氣流；電流。2. 思潮，潮流；趨勢，傾向。3. 進行，過程。
- degradation : n. 1. 降級；免職。2. 退化；墮落。3. 【地質學；地理學】（地表的）剝蝕。4. 【化學】降解，遞降分解（作用）。5. 【物理學】（能的）退降。
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Furthermore, it shows that the fractional increament of reverse leakage current, due to its large variation, is a preferable parameter to represent the degree of degradation
再者，因為反向漏電流的增加率變化較大，所以是表達劣化過程比較適合的參數。 -
Based on the hydrodynamic energy transport model, the influence of variation of negative junction depth caused by concave depth on the characteristics of deep - sub - micron pmosfet has been studied. the results are explained by the interior physical mechanism and compared with that caused by the source / drain depth. research results indicate that with the increase of negative junction depth ( due to the increase of groove depth ), the threshold voltage increases, the sub - threshold characteristics and the drain current driving capability degrade, and the hot carrier immunity becomes better in deep - sub - micron pmosfet. the short - channel - effect suppression and hot - carrier - effect immunity are better, while the degradation of drain current driving ability is smaller than those with the increase of depth of negative junction caused by source / drain junction shallow. so the variation of concave depth is of great advantage to improve the characteristics of grooved - gate mosfet
基於能量輸運模型對由凹槽深度改變引起的負結深的變化對深亞微米槽柵pmosfet性能的影響進行了分析，對所得結果從器件內部物理機制上進行了討論，最後與由漏源結深變化導致的負結深的改變對器件特性的影響進行了對比.研究結果表明隨著負結深（凹槽深度）的增大，槽柵器件的閾值電壓升高，亞閾斜率退化，漏極驅動能力減弱，器件短溝道效應的抑制更為有效，抗熱載流子性能的提高較大，且器件的漏極驅動能力的退化要比改變結深小.因此，改變槽深加大負結深更有利於器件性能的提高 -
Based on the hydrodynamics energy transport model, the degradation induced by donor interface state is analyzed for deep - sub - micron grooved - gate and conventional planar pmosfet with different channel doping density. the simulation results indicate that the degradation induced by the same interface state density in grooved - gate pmosfet is larger than that in planar pmosfet, and for both devices of different structure, the impact of n type accepted interface state on device performance is far larger than that of p type. it also manifests that the degradation is different for the device with different channel doping density. the shift of drain current induced by same interface states density increases with the increase of channel do - ping density
基於流體動力學能量輸運模型，對溝道雜質濃度不同的深亞微米槽柵和平面pmosfet中施主型界面態引起的器件特性的退化進行了研究.研究結果表明同樣濃度的界面態密度在槽柵器件中引起的器件特性的漂移遠大於平面器件，且電子施主界面態密度對器件特性的影響遠大於空穴界面態.特別是溝道雜質濃度不同，界面態引起的器件特性的退化不同.溝道摻雜濃度提高，同樣的界面態密度造成的漏極特性漂移增大 -
The current "high-tech" agricultural production system is a major source of environmental degradation in the united states.
當前高度技術化的農業生產體系是美國環境變劣的一個主要根源。 -
In this study, the degradation of the bond strength between the steel rebar and concrete by the impressed cathodic current was investigated
摘要本研究系探討外加陰極防蝕電流以鋼筋與混凝土介面間的握裹強度之折減效應。 -
Under a unified model of carrier transport over trap state established potential barrier at drain side, device degradation behavior such as asymmetric on - current recovery and threshold voltage degradation can be understood
我們通過載流子在漏極附加陷阱態勢壘的輸運模型，解釋了器件在應力后出現的閾值電壓的退化現象和非對稱性開態電流恢復現象。 -
Similar to hot carrier degradation, asymmetric on - current recovery was also observed and discussed. device degradation behaviors are compared in low vd - stress and in high vd - stress condition
在自加熱退化中我們也發現了類似熱載流子退化中的非對稱性恢復現象，並對其退化特點和模型進行了討論。 -
Hopefully, the results obtained from this paper would prompt the further research of the degradation and destruction mechanisms of zinc oxide varistors under multipulse current strike, and offer suggestion on revising the lightning test standards and improving the product quality of zinc oxide varistors, etc
本文的工作和結論有助於進一步研究氧化鋅電阻在多脈沖電流作用下的沖擊老化破壞機理，另外也為修改我國氧化鋅電阻的雷電流試驗標準提供理論依據，並為改進氧化鋅電阻生產和提高產品質量提出了建設性意見。 -
The degradation and lifetime model is deeply discussed, dynamic and static stress suffered by devices and circuits are compared and analyzed. a modified model for lc is proposed for better fitting the experimental data and the substrate current model parameters eerit and lc, degradation parameter h, m, n are extracted by the static stress experiment results
詳細分析討論了mosfet的壽命與退化模型，並對電路中器件所受的動態應力與直流靜態電應力進行了分析比較：根據實驗結果改進了有效導電長度l _ c模型；應用直流電應力實驗數據進行了襯底電流模型中載流子速度飽和電子科技大學博士論文臨界電場e ； 、有效導電長度lc以及退化參數h 、 m和n的提取。 -
The approach to restore the zonal ecology was probed according to the basic characteristics, current status of degradation and the major degradation factors of each restoration zone
根據各恢復區的基本特徵、退化現狀和退化主導因子的分異，探討了區域生態恢復途徑。 -
It is shown that substrate current is not the good indication of hot carrier effect in sde structures and using a threshold degradation criterion to characterize device degradation is not suitable for sde structures. third, the effect of the sde implant dose on the hot carrier immunity is thoroughly studied
在此基礎上，指出採用峰值襯底電流評估sde結構器件可靠性的局限性，以及在採用i - v特性測試方法研究sde結構器件的熱載流子效應時，閾值電壓作為退化判據所存在的問題。 -
Considering the unsymmetrical distribution of interface states induced by hot - carrier effects along the channel, the quasi - two - dimensional analysis methods are used to deduced the drain current, threshold voltage and electrical field in channel after hot - carrier degradation and the theoretical results are fully verified with the experimental data and m1ntmos6. 0 simulation output. the degradations of device output conductance, subthreshold conduction and rf characteristics are also analyzed
針對mos器件熱載流子退化所引入的界面態，根據其沿溝道非均勻分佈的模型，採用準二維分析方法對退化后器件的漏源電流、閾值電壓和飽和區溝道電場作了詳細的理論推導，並與實驗結果和器件二維數值模擬軟體minimos6 . 0的計算結果進行了驗證比較。 -
Thirdly, after the research on tailoring and measurement, cmmi cost degradation solution is proposed based on current software process status in china and process improvement guidelines
3 .對剪裁和度量有充分的研究積累后，結合國內軟體過程現狀和過程改進思路，研究提出了cmmi軟體過程的低成本化方案。 -
Ecology assessment models attache much importance to whether human beings ’ activity surpass the carrying capability of ecosystem, but ecological footprint only reflects the situations of ecosystem in the past and current time and nothing for the future, and it only reflects the influence of economic policy on environment but neglects the other import factors on land use such as urbanization, land degradation due to pollution, and erosion
生態學評價模型注重研究人類活動是否仍然處于生態系統的承載能力范圍之內;但是，它只反映了過去和當前的情況，未能對將來做出解釋和說明，並且它只反映經濟決策對環境的影響，而忽略了土地利用中的其他重要影響因素，如城市化、污染和侵蝕等造成的土地退化情況等。
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