dangling bonds 中文意思是什麼

dangling bonds 解釋
懸掛鍵
  1. The dangling bonds associated with the dislocation core determine to a large extent the electrical and optical properties of the dislocations.

    與位錯核心相聯系的懸空鍵在很大程度上決定著位錯的光學電學性質。
  2. These quenching centers can quench both blue emission related to the surface defects and the orange emission of mn2 + impurities. they are most likely originated from the dangling bonds of the lone pairs on surface s2 " or the zn2 + vacancies

    這種表面猝滅中心對自激活藍光和橙光發射都有猝滅作用，它們極有可能來自表面s ~ （ 2 - ）孤對電子的懸空鍵或zn ~ （ 2 + ）空位。
  3. Dangling bonds exist at the surface of porous silicon, which leads to the drop of the light - emitting efficiency. to apply porous silicon into practice, surface modification is necessary

    多孔硅表面存在大量的懸掛鍵，容易引起發光效率的降低，行之有效的克服方法是進行表面修飾。
  4. Two restore components were observed, corresponding to two defects, the internal and the surface. the studies on electron spin resonance ( epr ) spectra indicate that optical irradiation eliminated the dangling y - o bonds in the surface

    首次對y _ 2o _ 3納米晶電子順磁共振譜進行了研究，結果表明光輻照引起熒光增強原因與光輻照對釔的懸空鍵的消除有關。
  5. We can lessen the dangling bonds and bug in order to improve the ion / ioff 、 vth by hydrogenation. in general, hydrogenation is prepared after completing of tft, in this way, we need more radio frequency power and time, so the cost of hydrogenation will raise

    而通過氫化可以大大降低多晶硅薄膜晶粒邊界中的懸掛鍵和界面陷阱，從而顯著提高tft的場效應遷移率和開態電流，減少關態電流，提高tft的電學性能。
  6. On one hand, these organic function groups decorate the surface of nanoparticles by combining with the surface dangling bonds. and most important, they may act partially as the donor of d - a pairs in the sa luminescence by providing electrons

    討論了吸附在納米顆粒表面的一oh ，一ch = ;和一coo等有機官能團的作用，明確提出了這些官能團中的一部分可能充當了自激活發光施主一受主對中施主的觀點
  7. The photoelectric property of a - si : h films is closely associated with hydrogen content in films. on the one hand, hydrogen incorporated as monohydride ( si - h ) saturates dangling bonds in films, and on the other hand, hydrogen incorporated as polyhydride ( si - h2, si - h3, ( si - h2 ) n ) introduces defect in films and thus increases the density of localized electronic states in band gap

    A - si ： h薄膜的光電特性同膜中的氫存在密切關系，一方面，氫以單氫化合物（ si - h ）方式結合到膜中，從而飽和了膜中的懸掛鍵；另一方面，氫以多氫化合物（ si - h2 、 si - h3和（ si - h2 ） n ）方式結合到膜中，反而在膜中引入了缺陷，使帶隙中的局域態密度增大。
  8. Poly - crystallization silicon thin film transistor ( p - si tft ) addressing liquid crystal display has been currently the research and development focus in the field of flat panel displays, as it is most feasible approach to high resolution, high integration and low power consumption as a result of its high aperture ration. there are less number interface of the crystal grain, lower metal impurity and higher mobility in the electric current director, the milc p - si tft has been the research focus in the fields of amlcd, projection display, oled etc. there are vast dangling bonds and bug

    多晶硅薄膜晶體管（ p - sitft ）液晶顯示器可以實現高解析度、高集成度、同時有效降低顯示器的功耗，因而成為目前平板顯示領域主要研究方向;而以橫向晶化多晶硅為有源層的tft由於在導電方向有更少的晶界、更低的金屬雜質污染、更高的載流子遷移率而成為目前有源矩陣液晶顯示領域、投影顯示、 oled顯示等領域研究的熱點。
  9. At the same time, we experimented by varying substrate temperature, and found that high substrate temperature is favorable to hydrogen elimination and thus improve the structure of films, but over high substrate temperature leads to the increase of dangling bonds

    同時，我們研究了襯底溫度對a - si ： h結構的影響，發現高襯底溫度有利於沉積過程中的釋氫反應，從而改善薄膜的結構，但過高的襯底溫度將導致懸掛鍵的增多。
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