defect center 中文意思是什麼

defect center 解釋
故障中心
  • defect : n. 1. 缺陷,缺點,弱點;短處。2. 不足,缺乏。vi. 叛變;逃走。 He defected to the West. 他叛逃到西方。
  • center : n vt vi 〈美國〉=centre n 1 中心;中心點;圓心;中央;中樞,核心;中心人物;根源,起源。2 〈常C ...
  1. In the third chapter, the influence of current density, solution concentration, erosion time and aging in ambient air on the pl spectra of ps suggests that peak would blue shift with current density increasing, and with erosion time and aging time prolonging ; with the increasing of solution concentration, peaks would red shift when solution concentration less than 1 : 1 but blue shift when solution concentration greater than 1 : 1. above phenomena can be explained by quantum confinement and light center model, but do not deny the action of si - h bonding and defect on the surface in the process of photoluminescence. at present, radiation mechanism is still one of the primary problems in the study of ps

    在第z三章中;通過對比,分析了電流密度、陽極化時間、溶液濃度以及自i然氧化時間對多孔硅光致發光光譜的影響,認為在一定的范圍內,多i孔硅的發光峰位會隨電流密度的增大而藍移,要獲得較強的發光,需z要選擇合適的電流密度;隨著腐蝕時間的延長,多孔硅的發光峰位會i發生藍移;當f酸的濃度較小q : 1 )時,峰位隨濃度的增大表現為向i低能移動;而當f酸的濃度較大河山時,峰位隨濃度的增大則表現z為移向高能;多孔硅在空氣中自然氧化;其發光峰位發生藍移,而強i度隨放置時間的延長而降低。
  2. With several fan - shaped filter disks, which may overturn unloaded materials, installed on the annular internal and external frames, and can be connected with the defect air disk located in the center of the internal frame

    由若干個可傾翻卸料的扇形過濾盤,安置在環形內外框架上,並與位於內框架中心的錯氣盤連接而成。
  3. As a result 4 the rising annealing temperature induces si02 phase to form, also ivolves the formation of a si phase. in high - temperature - annealed sio ~, films the excess silicon atoms are present as si - si4 tetrahedra, randomly dispersed in the amorphous si02 matrix. photoluminescent spectra were observed for the samples excided by the laser whose wavelength is 365nm. the pl peak is located at about 445nm, which dose n ' t shift as the annealing temperature changes. as the annealing temperature is raised, the luminescent intensity increases. the phenomena suggest that the si - o - si bond as a defect center which is broken down by the stress at the si nc / si02 interface is the primary source of blue luminescence

    這個陡的界面由於明顯的晶格結構的差別而有較大的應力。界面的形成伴隨著界面發光中心的增加,同時pl強度在l戶800有一個大的增強。這個結果提示我們,界面上h 0 s工鍵斷裂形成的nbohc應是藍光發射的主要原因。
  4. In this part, the issues and mechanism of light degradation of b - doped p - type cz - si solar cells are introduced firstly, it was clarified that boron and interstitial oxygen are major components of defect center for light degradation of b - doped cz - si solar cells. then in the experiment the b - doped cz - si is chosen as the substrates and annealled at different temperature

    文中首先介紹了摻硼單晶硅太陽電池的光照衰減問題及衰減機制,然後以p型摻硼單晶硅為實驗樣品,經過不同溫度的熱處理,對影響光衰減的主要因素硼、氧進行了研究。
  5. Professor chan hsiao chang, director the epithelial cell biology research center explained, " the upregulation of nyd - sp27 in pancreatic - duct cells may reveal a previously unsuspected defect in cystic fibrosis contributing to pancreatic insufficiency, and thus represents a new target for pharmacological intervention in cystic fibrosis.

    負責該項研究的香港中文大學生物學研究中心主任陳小章教授指出,該基因在囊性纖維化胰腺的高表達,顯示一種以前未曾為研究人員注意到的導致胰腺功能缺陷的病理機制,而實驗結果提示該基因可能成
  6. Based on the defect attributes of orthogonal defect classification proposed by ibm research center, a defect data table is designed and the specific flow of defect process is also given in the paper

    摘要基於ibm研究中心提出的正交缺陷分類屬性設計缺陷數據表格,並給出缺陷處理具體流程。
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