defects concentration 中文意思是什麼

defects concentration 解釋
缺陷密度
  • defects : 布疵
  • concentration : n. 1. 集中。2. 【化學】提濃，蒸濃，濃縮；濃度；稠密度；【礦物】汰選，選礦，富化。3. 集中注意，專心。
  1. Some other defects in castings are well - defined cracks and hot tears that develop during solidification, under combination of stress concentration from uneven contraction and the metal ' s low strength at near - melting temperatures

    鑄件內部的其它一些缺點是，凝固過程中，在不均勻收縮造成的應力集中和接近熔點溫度下金屬的低強度的綜合作用下，出現的清晰裂縫和熱撕裂。
  2. The fatigue fracture occurred in the root of the screw where defects such as decarburization and cracks existed, and these defects made the zone to be a stress concentration area and caused the bolts to break finally

    疲勞裂紋的形成是由於螺紋牙底存在脫碳和折疊裂紋等缺陷，這些缺陷的存在使該材料產生了較大的應力集中，從而導致螺栓開裂失效。
  3. However, te - rich phases and point defects with high concentration were found locally. not only the vapor - solid equilibrium but also the vapor - liquid - solid equilibrium should be considered for the annealing of the crystals with te - rich phases. by analyzing the phase diagrams of cd - te and p - t plot of cd1 - xznxte ( x = 0. 04 ), it was concluded that for the purpose of rem

    本文通過仔細分析cd . te二元相圖和cd卜龍znxte （ x = 0 . 04 ）的p一t相圖，認為為了去除富te相，獲得穩定的電學性能，退火時晶片溫度應小於115ok ，氣氛環境的總壓力應小於pcs （對cdte ， pc洶
  4. Analysis results of histogram statistics and section electron microscopic scan technique, are that fracture feature of the cracks of the hbbb is similar and the crack is multi - source strain fatigue one. internal defects of the cast, such as impurities, gas holes, etc, are the main causes for early cracks. the contrast analysis of static strength, model and transient respond on three structures with fem proves that geometrical stress concentration in partial area has influence on early crack, also

    利用直方圖等統計方法和電鏡掃描技術對該抱軸箱體裂紋分析的結果是：抱軸箱體的裂紋斷口特徵相近，裂紋性質屬于多源性低周疲勞裂紋，鑄件中的夾雜、氣孔等內部缺陷是導致過早裂損的主要原因；利用有限元法對該抱軸箱體三種結構的靜強度、模態和動態響應對比分析，證實了局部幾何性應力集中對過早裂損也有一定影響。
  5. We measured the samples " electrical properties ( square resistance, square carrier concentration, carrier mobility and hall coefficient ) at room temperature by hall measurement. the experimental results revealed that all the samples are p - type, with increasing the annealing temperature, the carrier mobility increased and the square carrier concentration decreased. these changes in electrical properties are explained by a decrease in the number of mn acceptors because of the forming of mnas phase and the resuming of lattice defects during annealing

    所有樣品均為p型導電類型；發現在650到850溫度范圍內，隨著退火溫度的升高，樣品的方塊載流子濃度呈下降趨勢，而載流子遷移率呈上升趨勢；這是由於在退火過程中，隨著退火溫度的升高，有更多的mn參與mnas相的形成，使得以替位受主形式存在的mn減少，並且晶格缺陷得到恢復所致。
  6. In this paper, the relationship of the thermal donor with point defects was investigated by injection of different concentration and distribution vacancy via 1250 ?, rtp preannealing in different gases ( n2 o2, ar ). the influence of rtf preannealing on generation at 450 ? and annihilation at 650 ? of thermal donors ( td ' s ) was not detected

    本論文通過不同氣氛（ n _ 2 ， o _ 2 ， ar ） 1250 30s高溫rtp預處理在矽片中引入不同濃度和分佈的空位，進而用四探針和擴展電阻研究450不同時間熱施主的生成特性和650熱施主的消除特性，從而確定熱施主和點缺陷之間的關系。
  7. The dislocation - free, low defects densities crystal are acquired, in which the impurities concentration is decreased, their distribution are uniform, and the gaas crystal has high uniform and purity characteristics

    利用m - lec法可以消除單晶中的位錯，降低缺陷密度，降低單晶中的雜質含量，並能使雜質在晶體中的分佈均勻，得到晶體均勻性、純凈度都高的gaas單晶。
  8. We consider that the complexes of bmon ( m, n > 1 ) or the point defects induced by heavily boron doping may be involved in the nucleation of oxygen precipitates at high temperature range of crystal cooling. therefore it is reasonably deduced that the density of voids in hb cz silicon increases and the size of voids decreases due to the reduction of vacancy concentration as a result of heavy boron - doping enhanced oxygen precipitation prior to the void formation

    在實驗事實的基礎上，我們認為在重摻硼硅單晶生長過程中， bmon （ m ， n 1 ）復合體或摻b引起的點缺陷能在晶體冷卻過程中的較高溫度階段形成，且在隨后的退火過程中能穩定存在，作為氧沉澱形核的核心，從而促進了氧沉澱，減小了大直徑硅單晶中void缺陷的尺寸，增加其密度。
  9. After annealing at 600, because of formation of multi - vacancy - type defects that have long positron lifetime, positron annihilation average lifetime increased. when the average positron lifetime increased to maximum value ( 360ps ), the interstitial oxygen concentration decreased to minimum value ( 4 1017atoms / cm3 ). this result suggested that oxygen was involved in the formation of multi - vacancy - type defects

    正電子湮沒技術測試證明，快中子輻照直拉硅中在大約600退火時產生的多空位缺陷具有較長正電子壽命，可以使正電子平均壽命增加，當樣品的正電子平均壽命達到最大時（ 360ps ） ，其間隙氧含量降到一個極小值（ 4 10 ~ （ 17 ） atoms / cm ~ 3 ） ，這說明氧參與了這些缺陷的形成。
  10. The charge related to esd can be compensated by oxygen environment, oxygen environment works mainly through making up oxygen vacancy and repairing energy band distortion in time. heating the sample and reducing defect concentration can reduce the charge related to inner defects

    對于樣品表面電子受激解吸造成的充電可通過氧環境提供補償，氧環境主要是通過及時補充氧空位、修復能帶扭曲起作用的；對于電子束調制內部缺陷造成的充電可通過加熱試樣減輕缺陷濃度來補償。
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