dense film 中文意思是什麼

dense film 解釋
緻密膜
  • dense : adj. 1. 密集的，（物質等）密度大的，（人口等）稠密的。2. （煙、霧等）濃密的，濃厚的。3. 愚鈍的。4. 【攝影】〈頁片〉高密度的。adv. -ly ,-ness n.
  • film : n 1 薄層，薄膜；薄霧，輕煙；細絲狀的東西。2 【攝影】感光乳劑，照相軟片，電影膠片；影片。3 〈 pl ...
  1. When compared with pvd, cvd, fad film is dense, flat and lubricous because of 100 ionization rate of sediment after magnetic filtering without any large granule. moreover, it has good corrosion resistance and is not easy to be removed

    與pvd cvd技術比較，由於磁過濾后沉積粒子的離化率為100 ，並且沒有大顆粒， fad形成的薄膜非常緻密和平整光滑，抗腐蝕性能好，且與機體的結合良好不易脫落。
  2. In this paper, plasma - enhanced chemical vapor deposition ( pecvd ) technique was used to deposit the dielectric p - sio2 films and p - sion films on the silicon wafer under the conditions of low temperature and low pressure with teos organic sourse. this research was focused on the evaluation of film growth, hardness, stress, resistance and refractive index, by changing the experimental parameters including rf power, substrate temperature, chamber pressure, and the flow rates of teos, o2, n2. the results showed that the p - sio2 film was smooth, dense, and structurally amorphous

    實驗結果顯示，用pecvd法淀積的p - sio _ 2膜是一表面平坦且緻密的非晶質結構的薄膜，與矽片襯底之間有良好的附著性；在中心條件時生長速率可控制在2600a / min左右；在基板溫度410時有最大的硬度可達16gpa ；其應力為壓縮應力，可達- 75mpa ；薄膜的臨界荷重為46 . 5un 。
  3. Thick film technology is applied in complex dense electronic assemblies and makes it possible that reduces room occupied and increases mount density in printed circuit board

    採用這樣的封裝能夠大大減少佔用線路板的空間，進一步提高電路板的組裝密度，從而
  4. It was showed that dlc gradient film material had a good stability of hemocompatibility, for its surface almost had no changes. in comparison, the hemocompatibility of t16a14v became worse since its surface had been heavily scratched and dense oxide films on its surface had been destroyed. fratal theory and image processing method had been applied to calculate the fratal dimension of tribological surfaces furthermore to elavuate the surface morphology and roughness

    摩擦表面具有多尺度相似性和隨機性的特點，採用分形幾何理論描述表面的粗糙程度及形貌特徵，三維表面的分形維數可以作為一種尺度無關的粗糙度評定參數，利用圖象處理方法，通過材料表面的掃描電鏡sem圖象灰度數據來計算三維表面的分形維數。
  5. Prepared technical parameters were optimized by l9 ( 34 ) experiment analysis. a unique method for cleaning and drying of substrate - cleaning used by scour, drying used by infrared light was fished out by large numbers of experiment. chemical mechnism of zno thin film prepared by sol - gel technique was discussed by dta for the first time. by the measurements of sem, xrd and uvs, the thin film was analysed. the result proved that the thin film with strongly preferred orientation of c - axis perpendicular to the substrate surface which surface was homogenous, dense and crackfree was the crystalline phase of hexagonal wurtzite. the thin film was composed of plentiful asteroidal crystal which crystal dimension approximately 10 30nm. the average transmittance of thin film in visible region was above 90 %. the results of measurements else also proved that the thickness of single dip - coating was 75 240nm, this films resistivity was found to be 3. 105 102 3. 96 105 ? cm. the thickness and resistivity of thin film influenced by dope - content, withdrawal speed, pre - heat - treatment, anealing were reseached respectively

    利用xrd 、 sem以及uvs光譜儀等分析方法對薄膜進行了研究，結果顯示，所制備的薄膜為六方纖鋅礦型結構，具有高c軸擇優取向性；表面均勻、緻密，薄膜材料由許多星狀晶粒組成，晶粒尺寸大約為10 - 30nm左右；薄膜可見光透過率平均可達90 % ；對薄膜厚度以及電學性能進行了測定后發現：單次鍍膜厚度約為75 - 240nm ， al ~ （ 3 + ）離子摻雜型氧化鋅薄膜的電阻率在3 . 015 102 - 3 . 96 103 ? cm范圍內；分別研究了摻雜濃度、提拉速度、預燒溫度、退火溫度等工藝參數對薄膜厚度和電阻率的影響。
  6. The gas sources that we used are trimethylgallium ( tmg ) and 99. 9999 % purity nitrogen, which were fed into reaction chamber and resonance cavity respectively. the highly dense ecr plasma up to 1011cm - 3 was created in the resonance cavity and introduced to the next reaction chamber by the force of divergent magnetic field. consequently, gan thin film was grew on the substrate sapphire ( 0001 ) placed in the downstream

    實驗採用有機金屬三甲基鎵氣源（ tmg ）和99 . 9999純度的氮氣，在ecr - pecvd150裝置共振腔內電子迴旋共振吸收微波能量產生的高密度ecr等離子體在磁場梯度和等離子體密度梯度的作用下向下級反應室擴散，在放置於下游區樣品臺上的- al _ 2o _ 3襯底表面附近發生物理化學反應沉積成gan薄膜。
  7. The widely used mg alloy zm5 is chose as the original alloy. on the surface of the molten alloy, a layer of protective film with dense structure is formed by the addition of la, ce or mischmetal. the film prevents the penetration of oxygen and volatilization of mg vapor, and then prevents the zm5 alloy from oxidation and burning

    針對目前廣泛應用的zm5鎂合金，通過添加稀土鑭、鈰和混合稀土，在鎂合金液面上形成一層結構緻密並且具有耐久性的保護膜，阻止氧氣的進一步侵入和鎂蒸氣的向外揮發，不再產生鎂的劇烈氧化燃燒現象。
  8. Thin films with thickness of 0. 31m and 0. 36m respectively on si substrate, have been successfully prepared by a sol - gel spin coating method. cubic nanocrystals can be obtained at relatively low sintering temperature with an average grain size of about 47 nm and 51 nm respectively. the aluminia - doped scsz thins film are the same dense as the scsz thin films. however, there are a small amount of pinholes found in the microstructure of the titania - doped scsz films

    0 . 70固體電解質納米晶薄膜。燒結實驗結果表明，兩種薄膜均在650以上開始晶化，溫度越高，晶化越完全，在800可完全晶化所得納米晶顆粒呈純的螢石結構立方相鋁和鈦摻雜的納米晶顆粒的平均大小分別為47和51nm 。
  9. Sige - on - insulator ( sigeoi ), which appears very recently, integrates both the advantages of soi and that of sige and thus attracts much attention for the potential applications in low voltage, low power consumption, high dense integrated circuits and optoelectronics, system on chip etc. but people are in the very beginning of the sige - oi material fabrication research. this work focuses on these three facets : 1. sige film preparation ; 2

    本論文結合以上背景，主要進行了以下幾個方面的研究：一、硅基上sige材料的異質外延生長技術，以及sige薄膜的表徵；二、 sige - oi的simox制備工藝研究；三、 sige - oi材料的smart - cut制備工藝研究，以及sige / si異質結結構中注入h離子的物理效應。
分享友人
分享到 Line

分享到臉書