deposition pressure 中文意思是什麼

deposition pressure 解釋
沉積張力
  • deposition : n. 1. 免職，罷免；廢位。2. 淤積[沉積]（物，作用）。3. 耶穌從十字架上放下（的畫、雕刻）。4. 寄存，委託；委託物。5. 【法律】口供，證言；口供書。
  • pressure : n 1 壓；按；擠；榨。2 【物理學】壓力，壓強；大氣壓力；電壓。3 精神壓力，政治[經濟、輿論等]壓力。4...
  1. Using jgp560c magnetron sputtering equipment, cu / ag film are deposited on cd1 - xznxte substrate by dc magnetron sputtering in order to get the influences of the main experiments parameters such as sputtering power, gas flow, vacuum air pressure, magnetoelectricity power and substrate temperature on deposition rate of film, discovered that dc sputtering power is the most key factor influencing the deposition rate

    在jgp560c型超高真空多功能磁控濺射鍍膜機上，採用直流磁控濺射法在cdznte晶體上制備出cu ag合金薄膜，揭示了氣體流量、直流濺射功率、勵磁電源功率、工作氣壓和襯底溫度等工藝參數對沉積速率的影響規律。結果表明濺射功率對沉積速率的影響最大，隨濺射功率的增大沉積速率快速增大。
  2. The properties of cn thin films such as their morphology, component, crystal structure and the bonding structure and the relation between those properties and the gas - phase reaction parameters were discussed, showing that the deposition of p - c3n4 thin film is the compete result of various reaction processes in the dynamics balance conditions ; the process of cn films depo sition is diagnosed in situ through the optical emission spectra technique, the effects of experimental parameters on the concentration of the precursors and the gas - phase reactions in the plasma have been obtained ; the main reaction precursors for film deposition identified ; the relation between the characteristics of cn thin films and the reaction process in the plasma is analyzed. the cn thin films deposition under different substrate temperatures in high pressure pe - pld shows that the si atom of the substrate has participated the cn films growth process, based on this the growth mode of cn thin films on the si substrate is proposed. the further experiment of cn thin films deposition on si substrate scratched by diamond as well as covered with fe catalyzer has been attempted, which indicates that changing the dynamics conditions of the surface reaction can alter the growth characteristic of the cn thin films and can enhance obviously the films growth rate

    採用pld技術進行了碳氮化合物薄膜沉積，得到了含氮量為21at的cn薄膜；研究了襯底溫度和反應氣體壓強對薄膜結構特性的影響，給出了cn薄膜中n含量較小、 sp ~ 3鍵合結構成分較少和薄膜中僅含有局域cn晶體的原因；引入脈沖輝光放電等離子體增強pld的氣相反應，給出了提高薄膜晶態sp ~ 3鍵合結構成分和薄膜的含n量可行性途徑；應用pe - cvd技術以ch _ 4 + n _ 2為反應氣體並引入輔助氣體h _ 2 ，得到了含n量為56at的晶態cn薄膜；探討了cn薄膜形貌、成分、晶體結構、價鍵狀態等特性及其與氣體壓強和放電電流的關系，證明了- c _ 3n _ 4薄膜沉積為滿足動力學平衡條件的各種反應過程的競爭結果；採用光學發射譜技術對cn薄膜生長過程進行了實時診斷，得到了實驗參量對等離子體中活性粒子相對濃度和氣相反應過程的影響規律，給出了cn薄膜沉積的主要反應前驅物，揭示了cn薄膜特性和等離子體內反應過程之間的聯系；採用高氣壓pe - pld技術研究了不同襯底溫度條件下cn化合物薄膜的結構特性，揭示了si原子對薄膜生長過程的影響，給出了si基表面碳氮薄膜的生長模式；在金剛石研磨和催化劑fe處理的si襯底上進行cn薄膜沉積，證明了通過控制材料表面動力學條件可以改變碳氮薄膜結構特性，並可顯著提高晶態碳氮材料的生長速率。
  3. In the present thesis, znse, znte and their quantum well ( qw ) structures on si substrates with zno as buffer layer by low pressure metal - organic chemical vapor deposition ( lp - mocvd ) technique were prepared. zno is selected as the buffer layer for it has many similarities with the oxide layer on the surface of si wafer. all important experimental results and conclusions presented in this thesis are summarized as follows : 1

    本文中，我們利用zno與si襯底上氧化層? sio _ x有很好的浸潤性這一特點，採用zno作為緩沖層，用低壓-金屬有機物氣相沉積（ lp - mocvd ）設備在si襯底上生長znse和znte薄膜以及zncdse znse和zncdte znte量子阱結構，並對其發光特性進行了研究，獲得的主要研究結果如下： 1 、在si襯底上獲得了較高質量的zno薄膜。
  4. In the work, mid - frequency pulse magnetron sputtering is used to prepare znoral thin films used as the back reflector of the thin silicon films solar cells. the best techological condition was obtained by optimizing the preparing conditions, ( var is decided by the deposition rate, target voltage : 265v, gas pressure : 0. 6pa, the high base vacuum is expected

    本文採用中頻脈沖磁控濺射法，通過優化zno ： al薄膜的制備工藝，如靶電壓、本底真空度、工作氣壓、襯底溫度、 o _ 2 ar ，得到可用於硅薄膜太陽能電池背電極的zno ： al薄膜。
  5. These investigations revealed that the chemical composition, deposition rate and the orientation direction of films were affected by the oxygen partial pressure

    實驗結果表明，氧分壓影響氧化釩薄膜的沉積速率、成分以及晶體結構。
  6. In this paper, plasma - enhanced chemical vapor deposition ( pecvd ) technique was used to deposit the dielectric p - sio2 films and p - sion films on the silicon wafer under the conditions of low temperature and low pressure with teos organic sourse. this research was focused on the evaluation of film growth, hardness, stress, resistance and refractive index, by changing the experimental parameters including rf power, substrate temperature, chamber pressure, and the flow rates of teos, o2, n2. the results showed that the p - sio2 film was smooth, dense, and structurally amorphous

    實驗結果顯示，用pecvd法淀積的p - sio _ 2膜是一表面平坦且緻密的非晶質結構的薄膜，與矽片襯底之間有良好的附著性；在中心條件時生長速率可控制在2600a / min左右；在基板溫度410時有最大的硬度可達16gpa ；其應力為壓縮應力，可達- 75mpa ；薄膜的臨界荷重為46 . 5un 。
  7. Using the microwave selective heating property for materials, by setup equivalent equation, and first time inducing the electromagnetic field perturbation theory to the design of heating materials for substrate in mpcvd, three temperature distribution modes were established, including temperature distribution comprehensive mode of inhomogeneous plasma, temperature distribution composite mode of composite substrate materials, temperature distribution perturbation mode of composite materials, which ii provided an whole new technology route to the design of substrate heating system in mpcvd and guided the preparation of heating materials for substrate. and then the heating materials for substrate were designed and optimized to obtain large area homogeneous temperature distribution even larger than substrate holder ' s diameter. as an important part, this thesis researched the nucleation and growth of diamond films in mpcvd, systematically researched the effects of substrate pretreatment, methane concentration, deposition pressure and substrate temperature etc experimental technologic parameters on diamond films " quality on ( 100 ) single crystal silicon substrate in the process of mpcvd, characterized the films qualities in laser raman spectra ( raman ), x - ray diffraction ( xrd ), scanning electron microscopy ( sem ), infrared transmission spectra ( ir ), atomic force microscopy ( afm ), determined the optimum parameters for mpcvd high quality diamond in the mpcvd - 4 mode system

    該系統可通過沉積參數的精確控制，以控制沉積過程，減少金剛石膜生長過程中的缺陷，並採用光纖光譜儀檢測分析等離子體的可見光光譜以監測微波等離體化學氣相沉積過程；利用微波對材料的選擇加熱特性，通過構造等效方程，並首次將電磁場攝動理論引入到mpcvd的基片加熱材料的設計中，建立了非均勻等離子體溫度場綜合模型、復合介質基片材料的復合溫度場模型及復合介質材料溫度場攝動模型，為mpcvd的基片加熱系統設計提供了一條全新的技術路線以指導基片加熱材料的制備，並對基片加熱材料進行了設計和優選，以獲取大面積均勻的溫度場區，甚至獲得大於基片臺尺寸的均勻溫度區；作為研究重點之一，開展了微波等離體化學氣相沉積金剛石的成核與生長研究，系統地研究了在（ 100 ）單晶硅基片上mpcvd沉積金剛石膜的實驗過程中，基片預處理、甲烷濃度、沉積氣壓、基體溫度等不同實驗工藝參數對金剛石薄膜質量的影響，分別用raman光譜、 x射線衍射（ xrd ） 、掃描電鏡（ sem ） 、紅外透射光譜（ ir ） 、原子力顯微鏡（ afm ）對薄膜進行了表徵，確立了該系統上mpcvd金剛石膜的最佳的實驗工藝參數。
  8. The conclusions are drawn as following : 1. regularity of fabrication in aluminum matrix composite ring - shaped performs with large dimensions and effects of parameters were investigated, based on the novel crucible movable spray deposition technology and equipment. the optimal parameters are that the diameter of the delivery tube is 3. 8mm, spray gas pressure is 0. 8mpa, spray height is 200mm, and transferring pressure of sic is 0. 5mpa

    通過系統的實驗研究得到如下結論: 1 .基於新型的移動坩堝自動化控制噴射沉積環坯制備技術及裝置，研究了大尺寸鋁基復合材料環坯的制備規律，討論了噴射沉積工藝參數對沉積坯形成過程的影響，得到了最佳工藝參數:導流管直徑d = 3 . 8mm ，霧化氣體壓力p = 0 . 8mpa ，噴射高度h = 200mm ， sic顆粒輸送壓力p送= 0 . 5mpa 。
  9. Lower water vapor partial pressure during processing for higher quality, better adhesion and more reproducible deposition

    改善鍍膜的質量，提高薄膜的附著力和多層鍍膜能力。
  10. In this thesis, the history, structure. preparation method and basic properties of nano - composite materials and photoluminescence of nanocrystalline silicon have been summarized. research of the novel antireflecting energy saving coating glass has also been presented. the si / sic composite films are prepared with siht and ? 2 ^ 4 as the source gas by atmosphere pressure chemical vapor deposition ( apcvd )

    本論文全面介紹了納米材料，特別是納米鑲嵌復合材料的發展概況、特性、常用的制備方法、常見的幾種硅系納米材料以及有關納米硅材料的發光，並對新型無光污染節能鍍膜玻璃的研製和發展作了概述。
  11. Generic specification of low pressure chemical vapor deposition system

    低壓化學氣相淀積設備通用技術條件
  12. Superconducting mgb2 thin films were fabricated on single - crystal sapphire substrate by hfcvd and hpcvd, respectively. the experiments were carried out both in situ and ex situ. in situ method refers to acquiring mgb2 thin films directly during the deposition process. ex situ method is defined as obtaining mgb2 thin films indirectly by post - annealing of precursor b film in high mg vapor pressure at high temperatures

    實驗分原位法和非原位法兩種工藝，原位法是在薄膜沉積過程中直接生成了mgb2超導薄膜；非原位法是先在基片上沉積前驅物b膜，然後將b膜在mg蒸氣中高溫退火得到mgb2超導薄膜。
  13. Microwave plasma chemical vapor deposition ( mpcvd ), a kind of chemical vapor deposition method with low temperature ， low intensity of pressure and clearance ， is commonly used for the growth of diamond thin films

    微波等離子體增強化學氣相沉積法（ mpcvd法）是眾多低氣壓下激活cvd工藝方法的一種，也是目前在國內外比較流行的制備金剛石薄膜的工藝方法之一。
  14. In this paper, the growth technology is presented for epitaxial silicon carbide films on sapphire with a buffer layer by atmospheric - pressure chemical vapor deposition ( apcvd ) process. the effect of temperature and precursors flow rates on the growth of silicon carbide films by chemical vapor deposition is analyzed. the structural properties of the films grown on sapphire compound substrate are studied by x - ray diffraction ( xrd ), x - ray photospectroscopy ( xps ) and photoluminescence spectroscopy

    本論文提出了在藍寶石上引入一層緩沖層材料形成復合襯底，採用常壓化學氣相淀積（ apcvd ）方法在其上異質外延生長sic薄膜的技術，分析了cvd法生長sic的物理化學過程，通過實驗提出sic薄膜生長的工藝條件，並通過x射線衍射（ xrd ） 、 x射線光電子能譜（ xps ） 、光致發光譜（ pl譜）和掃描電鏡（ sem ）對外延薄膜的結構性質進行分析。
  15. The micro structure of the films prepared with sih4 as the source gas by atmosphere pressure chemical vapor deposition ( apcvd ) and its influence on the photoluminescence and optical properties have systematically studied by the means of the measurements of tem hrem xps sem and raman

    對以硅烷為原料氣採用常壓化學氣相沉積制備的薄膜，利用tem 、 hrem 、 xps 、 sem 、 raman等手段系統研究了沉積溫度、退火后處理等制備工藝對薄膜微結構的影響，分析了微結構的成因。
  16. The paper put forward an aim to deposit n - doped titanium dioxide film on glass substrate by the atmospheric pressure chemical vapor deposition ( apcvd ) method. using ticl4 and oa as precursors, titanium dioxide thin films had been deposited by apcvd method. nitrogen had also been doped in the film when n2o gas was added as the dopant

    在實驗室條件下以ticl _ 4和o _ 2為先驅體，採用常壓化學氣相沉積法（ apcvd ）制備得到具有一定光催化性和親水性的tio _ 2薄膜，並且以n _ 2o作為摻雜劑，對薄膜進行了n的摻雜，在一定程度上提高了薄膜可見光照射下的光催化性和親水性。
  17. 3. the gap defects in multilayer cvd sic coatings could be effectively controlled by means of slow deposition in low - pressure chemical vapor deposition ( lpcvd ). 2d c / sic composites with a multi - layer cvd sic coating prepared by slow lpcvd showed weight gain at 1300 @ in air condition

    （ 3 ）採用慢速減壓化學氣相沉積工藝實現了對多層cvdsic塗層面缺陷的有效控制，實現了單一cvdsic塗層保護2dc sic在高溫下（ 1300 ）的氧化增重。
  18. Effects of methane concentration, deposition pressure, gas flow rate and substrate temperature on diamond coating on quartz glass by mpcvd were studied systemically. the best parameters were established by experiments

    系統地討論了在石英玻璃上mpcvd沉積金剛石薄膜的實驗過程中，甲烷濃度、沉積氣壓、氣體流量、基體溫度等不同實驗工藝參數對金剛石薄膜質量的影響。
  19. The paper systemically studied effects of methane concentration, deposition pressure, gas flow rate and substrate temperature on diamond coating on wc - co tools by mpcvd. the best parameters were established by experiments. influence of diamond film and coating adhesion was compared with two different pretreatments

    本文系統地研究了在硬質合金上mpcvd沉積金剛石薄膜的實驗過程中，甲烷濃度、沉積氣壓、氣體流量、基體溫度等不同實驗工藝參數對金剛石薄膜質量的影響。
  20. The shimadzu uv - 3101 spectrophotometer was employed to get the uv - visible transmission and reflection spectra. both of the absorption coefficient ( a ) and optical band gap ( eg ) were calculated from the transmission and reflection spectra of the films. it was observed that eg decreased with an increase in the deposition pressure

    採用紫外-可見光分光光度計測定了納米- sic薄膜透射光譜和反射光譜，並通過樣品的透射光譜和反射光譜計算了納米- sic薄膜吸收吸收系數和光學帶隙eto實驗結果表明，增大工作氣壓導致納米- sic薄膜的光學帶隙的減小。
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