donor doping 中文意思是什麼
donor doping
解釋
施主摻雜-
But above 700, the resistivity decreases suddenly, as the nb ion diffuse from linbo3 into zno and occupied the interstitial sites. nb ions, as donor doping in zno film,
Linbo3中的nb擴散到zno中去，占據間隙位置，相當于失主能級，形成電阻率低的n型zno薄膜。 -
Based on the hydrodynamics energy transport model, the degradation induced by donor interface state is analyzed for deep - sub - micron grooved - gate and conventional planar pmosfet with different channel doping density. the simulation results indicate that the degradation induced by the same interface state density in grooved - gate pmosfet is larger than that in planar pmosfet, and for both devices of different structure, the impact of n type accepted interface state on device performance is far larger than that of p type. it also manifests that the degradation is different for the device with different channel doping density. the shift of drain current induced by same interface states density increases with the increase of channel do - ping density
基於流體動力學能量輸運模型，對溝道雜質濃度不同的深亞微米槽柵和平面pmosfet中施主型界面態引起的器件特性的退化進行了研究.研究結果表明同樣濃度的界面態密度在槽柵器件中引起的器件特性的漂移遠大於平面器件，且電子施主界面態密度對器件特性的影響遠大於空穴界面態.特別是溝道雜質濃度不同，界面態引起的器件特性的退化不同.溝道摻雜濃度提高，同樣的界面態密度造成的漏極特性漂移增大 -
However, the pure cdte films have high electrical resistivity and this is mighty unfavourable to improve the conversion efficiency of cdte solar energy cells, and the best way is to doping donor or acceptor in pure cdte films
但本徵cdte薄膜均為高阻半導體，這對于提高cdte薄膜太陽能電池的光電轉換效率是極為不利的，要提高cdte薄膜的光電性能必須通過施主或受主的摻雜。 -
The effects of different donor - doping on batio3 lptc thermal resistor
二氧化鈦壓敏電阻勢壘高度的測定
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