doped diamond 中文意思是什麼

doped diamond 解釋
摻雜金剛石
  • doped : 摻雜的摻了添加劑的
  • diamond : n 1 金剛鉆，金剛石，鉆石。2 菱形；菱飾；（紙牌的）方塊。3 【棒球】內野；棒球場。4 【印刷】鉆石體...
  1. Diamond was synthesized using b - doped gics as carbon sources by hthp method

    以含硼gics作為碳源，在高溫高壓下合成金剛石。
  2. In this paper, a new method was presented that b - doped diamond was synthesized at high pressure and high temperature ( hthp ) using b - doped graphite intercalation compounds ( gics )

    本論文提出了利用含硼石墨層間化合物（ gics ）高溫高壓（ hthp ）合成含硼金剛石的新工藝。
  3. It is demonstrated that edm method can effectively process b - doped diamond film

    證實了摻硼金剛石膜是可以電加工的。
  4. It shows that the particle number will fluctuate with the recombination coefficient ; 3 ) the dynamic process of the n - type doped diamond film is simulated. the particle distributions of s, s + and ar + are gotten. the result has important reference to the investigation of n - type diamond film doping at low temperature

    （ 3 ）對不同氣壓、偏壓和不同的配比情況下n型硫摻雜的金剛石薄膜的動力學過程進行了模擬，得出了摻雜元素s和s ~ +以及惰性氣體ar ~ +的粒子數分佈，計算結果對摻雜過程的研究有重要的參考價值。
  5. But there are still several problems concerning the stability and reproducibility of device fabrication. the heavily born doped p - type diamond films synthesized by hot filament chemical vapor deposition with b ( ch3 ) 3 as boron source substituted the metal electrode aluminum

    本文還利用熱燈絲化學汽相沉積（ hfcvd ）法，採用硼酸三甲酯b （ ch3 ） 3為硼源制備了重摻雜p型金剛石膜，作為lppp / alq異質結增強型發光器的電極。
  6. Morphology of b - doped diamond had been observed by sem. boron contents and impurity situation of b - doped diamond had been analyzed by ftir / raman and xrf

    對含硼金剛石在sem下進行形貌觀察，通過紅外拉曼光譜、 x射線熒光（ xrf ）分析硼摻雜的存在狀態和含量。
  7. 1. boron - doped diamond ( bdd ) electrodes have recently attracted considerable interest, especially for electrochemical analysis due to its outstanding characteristics : ( 1 ) very low background current density ; ( 2 ) a wide potential window in aqueous solution ; ( 3 ) good activity toward some redox analytes without any pretreatment ; ( 4 ) long term response stability

    1 .硼摻雜金剛石（ bdd ）電極具有較低的背景電流、無需作任何處理的情況下對一些氧化還原分析物有好的活性、高電化學穩定性、寬的電位窗口和長時間的響應穩定性等優點，研究了一些活性物質在bdd電極上的電化學性質。
  8. Diamond film un - doped is highly insulated and so is not processed by electrical discharge machining method

    未摻雜cvd金剛石膜是高度絕緣的，不能採用如電火花等加工導電聚晶金剛石（ pcd ）的方法和設備對其進行加工。
  9. Cubic boron nitride ( c - bn ) thin films have significant and potential technological application prospect in cutting tools, electronic and optical devices, etc. because c - bn possesses excellent physical and chemical properties, such as ultrahigh hardness only inferior to diamond, inertness against oxidation at high temperature, uneasy reaction with iron group metal, as well as the possibility of using as n - and p - type doped semiconductors

    立方氮化硼（ c - bn ）具有優異的物理化學性質，如僅次於金剛石的硬度、高溫下強的抗氧化能力、不易與鐵族金屬反應、可n型摻雜也可p型摻雜成為半導體等，立方氮化硼（ c - bn ）薄膜在切削刀具、電子和光學器件等方面有著潛在的重要應用前景。
  10. Cubic boron nitride ( cbn ) thin films have significant and potential technological application prospect in cutting tools, electronic and optical devices, etc., because cbn possesses excellent physical and chemical properties, such as ultrahigh hardness only inferior to diamond, inertness against oxidation at high temperature, uneasy reaction with iron group metal, as well as the possibility of using as n - and p - type doped semiconductors

    立方氮化硼（ cbn ）具有優異的物理化學性質，如僅次於金剛石的硬度、高溫下強的抗氧化能力、不易與鐵族金屬反應、可n型摻雜也可p型摻雜成為半導體等，立方氮化硼（ cbn ）薄膜在切削刀具、電子和光學器件等方面有著潛在的重要應用前景。
  11. In order to improve its machining abilities and finally manufacture it by edm method, diamond film has been doped boron

    為改善eacvd金剛石膜的可加工性，實現金剛石厚膜的電火花加工，對金剛石膜進行了摻硼。
  12. Edm method was adopted to process b - doped diamond film and the process was studied. the morphology and composition of the machined diamond film was analyzed by sem and raman. surface roughness was measured by surface roughness tester

    研究了電火花加工、電火花拋光和線切割加工摻硼金剛石膜工藝，對加工后的膜進行了sem分析、 raman分析和已加工表面粗糙度分析。
  13. The synthesis of boron - doped diamond at high pressure and high temperature

    添加劑硼對純鐵粉末觸媒合成金剛石的影響
  14. Dta curves of b - doped diamond had been studied, and the resistances had been measured

    分析了含硼金剛石的差熱曲線，並測量了其電阻值。
  15. Conductivity and thermo - stability of b - doped diamond increased with boron contents increasing

    含硼金剛石熱穩定性和導電性隨著硼含量增加而提高。
  16. B - doped diamonds were obtained under the condition of 1250 ~ 1350 and 5gpa ~ 6gpa. color of diamond became deep with boron contents increasing, till becoming black. b - doped diamond was polycrystalline, and crystal surface was developed incompletely

    利用這些gics ，在1250 1350 、 5 6gpa下合成了含硼金剛石，金剛石顏色隨著硼含量增加而加深直至黑色，含硼金剛石生長成多晶顆粒，晶面發育不完整。
  17. Fabrication equipment and theory of b - doped diamond film were introduced. mechanical systems were studied and electric and control systems were designed. experimental results show that the equipment can deposit b - doped large area high - quality thick diamond film under the control system

    研究了摻硼金剛石膜設備及其原理，研究了機械繫統，設計了電氣系統和控制系統，系統運行表明該設備在控制系統監控下沉積出高質量大面積的摻硼金剛石膜。
  18. The carrier mobility of the s doped n - type diamond had the same order as the s doped 1 b diamond and the changes of the character of diamond along with the changes of intensity of s doped in diamond were investigated

    其中，採用cvd技術制備的以硫為施主的n型金剛石薄膜的遷移率與b單晶金剛石硫摻雜的遷移率達到了相同的量級。
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