doped semiconductor 中文意思是什麼
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When a donor or an acceptor impurity is added to a semiconductor, we say that the material has been "doped".
當半導體中加入了施主感受主雜質，我們就說該物質「摻雜」了。 -
Electronic and magnetic properties of 3d transition - metal - doped - - 2 chalcopyrite semiconductor
2黃銅礦半導體的電磁性質 -
Much attention has been paid on pure or doped zirconia thin films because of their high melting point, low heat conductivity, high ionic conductivity and chemical durability. in the case of metal - oxide - semiconductor ( mos ) devices and high - temperature superconductor ( hts ) wires, zirconia epitaxial thin films are promising buffer layers and have been intensely studied in the past two decades
純的或摻雜的氧化鋯薄膜因其高熔點、低熱導率、高離子導電能力和高溫化學穩定性而受到相當的重視，而且氧化鋯外延薄膜在金屬氧化物半導體（ mos ） 、高溫超導帶材等領域的應用受到越來越多的關注。 -
Testing of materials for semiconductor technology ; contactless determination of the electrical resistivity of semiconductor slices with the eddy current method ; homogeneously doped semiconductor wafers
半導體工藝材料檢驗.用渦流法無接觸測定電阻率.均勻 -
Zno is a ii - vi wide bandgap semiconductor which is used for various applications such as gas sensors, bulk - acoustic - wave devices, surface - acoustic - wave devices, varistors, light emitting, light detecting devices and so on. undoped and al doped zno thin films have also been widely used in transparent conducting layers because of their higher thermal stability and good resistance against hydrogen plasma processing damage compared with ito ( sn - doped in2o3 ) films
Zno是一種新型的直接帶隙寬禁帶半導體材料，具有六方纖鋅礦結構，較高的激子束縛能（ 60mev ） ，較低的電子誘生缺陷和閾值電壓低等優點，在uv探測器、藍紫光led和ld等光電子器件領域有巨大的應用潛景。 -
The magnetic atoms doped are called magnetic impurities and the nonmagnetic semiconductor is called the based material
其中被摻入的磁性原子稱作磁性雜質，非磁半導體稱作基質。 -
Xrd reveals a mixture structure of the face - centered cubic and hexagonal close - packed phases. the sn doped makes the electrical conductivity change from insulator to n - type semiconductor
用共蒸發法制備摻錫的c60薄膜，發現摻入的sn原子的薄膜導電性由原來的絕緣體變為n型半導體。 -
Integration of optical communication devices is the development direction of current optical communication system. erbium - doped optical waveguide amplifier is a novel optical amplifier after erbium - doped fiber - optic amplifier and semiconductor optical waveguides amplifier, it has received great attention for gain at 1. 535 m
工作於1 . 55 m光通信窗口的摻鉺集成光波導放大器（ edwa ）是繼摻鉺光纖放大器（ edfa ） 、半導體光放大器之後的又一新型光放大器，近年來引起人們極大的興趣。 -
The recent research and development situations of the optical fiber amplifier including erbium doped fiber amplifier ( edfa ), thulium doped fiber amplifier ( tdfa ), raman fiber amplifier ( fra ) and semiconductor optical amplifier ( soa ) domestic and abroad are described, and the trend of the amplifiers are discussed, the characteristics of them are compared
摘要介紹了國內外光放大器的最新研究動態，主要包括摻鉺光纖放大器、摻銩光纖放大器、光纖喇曼放大器及半導體光放大器，並指出相關放大器的發展趨勢，最後對光纖放大器的特性進行了比較分析。 -
Na - doped model shows the character of p - type semiconductor, and ni - doped model is n - type semiconductor
摻na后材料具有p型半導體的特性，而摻ni后則具有n型半導體的特性。 -
With doped ni element, the material converted into n - type semiconductor, what ' s more it has very low seebeck coefficient which shows ni is + 4 in this material
摻入一定量的ni后，轉變為n型半導體材料，它的seebeck系數非常小，表明ni在這個化合物中的表觀化學價的+ 4價。 -
Second, in luminescence materials hole or electron concentration will change with the doping content. so we expand the hole or electron concentration in taylor expansion and calculat the optimum doping contents. for several semiconductor materials such as zns : mn, silicon doped er and gaas, gap, gan doped different materials, we calculat their optimum doping contents which arc close to some experimental results
應用該表達式，給出了各種不同的制備方法zns摻mn 、硅基摻鉺、以及gaas 、 gap 、 gan摻不同元素制出的發光材料，對最佳摻雜含量進行了理論上的計算，理論計算值與實驗數據相符合。 -
We have investigated the influence on the character of cdte thin films with different conditions and parameters. secondly, in normal temperature, cdte thin films are high resistance semiconductor, for improving its electricity capability, we commonly inject benefactor or acceptor impurities into the pure cdte thin films, the ion influx technique is a good method among many adulteration means. at present, the literatures on the doped cdte thin films by the ion influx technique have a fat lot reports
本論文首先採用近距離升華法在不同基片上制備cdte薄膜，研究了不同工藝條件和參數對cdte薄膜性質的影響。其次，在常溫下，本徵cdte薄膜均為高阻半導體。為了改善其導電性能，通常向cdte薄膜中摻入施主或受主雜質，其中離子注入技術是摻雜方法之一。
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