el al 中文意思是什麼
el al
解釋
亞拉巴馬河-
Israel could not pick up all the promised equipment in the seven jets of the el al airfleet.
以色列航空公司的7架噴氣機無法運走提供給他們的全部裝備。 -
High - speed, muti - services and economy have become the major issues of the future ip backbone technology as far as thes poiflt is concerned, thes paper explores layer 3 switdrig technology which separates control component and forward compontal in the traditional roulers. two forwarding al gori thms - - - - d ata - driven mo d el and top olo gy driven model are also compared, a next generation ip backbone echno l o gy - - - - multiproto co l label switching is developed, with its operation and its deployinent in traffic engineering, c1ass - ofservce and virtual private network
本文從未來ip骨幹網技術所要求的高速化、多業務支持、經濟性出發，介紹了在傳統路由器基礎上將控制部件和轉發部件分離的第三層交換技術，比較了數據驅動模型和控制驅動（拓撲驅動）模型兩種轉發演算法，並由此引出下一代ip骨幹網路技術? ?多協議標記交換，闡述了其工作原理以及在流量工程、服務等級區分和虛擬專用網中的應用。 -
In this paper, we reported the structural and luminescent properties of si - based oxide films containing semiconductor si, ge or metal al powders prepared by a dual - ion - beam co - sputtering method ( si - sio2 films and al - si - sio2 films ) or rf magnetron sputtering technique ( ge - sio2 films ), and analyze the pl and el mechanism. 1. the composite films of si - sio2 films were prepared by dual ion beam co - sputtering method from a composite target in argon atmosphere
我們利用雙離子束共濺射和射頻磁控共濺射技術制備了一系列含有半導體si 、 ge顆粒及金屬顆粒al的薄膜，即si - sio _ 2薄膜、 ge - sio _ 2薄膜和al - si - sio _ 2薄膜，分別對它們的結構、光吸收以及發光性質進行了研究。 -
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Using the typical moled structure glass / dbr / ito / htl / eml （ etl ） / al ， the el spectrum narrowing, intensity enhancement in the normal direction as well as emission intensity redistribution in space are observed. by the introduction of single layer silver film instead of the dbr / ito multilayer, a ( / 2 - length cavity is obtained. using this kind of microcavity, three - color single mode pl from a single material alq and three - color single mode el from double layers pvk / alq are achieved for the first time
通過以金屬銀替代多層結構的dbr / ito ，既作為反射鏡，又作為el器件中的空穴注入電極，設計出腔長只有（ / 2的超短微腔，採用同一種寬譜帶材料alq作為光發射層，首次報道了三基色單模光致發光和pvk / alq雙層結構的三基色單模電致發光。 -
The author puts forward many suggestions and practical measures to improve the energy conservation and consumption reduction in china ' s power industry, based on analyzing related problems including changing energy resoures utility structure, innovating energy utility technology and ajusting policy direction el al
在分析相關問題的基礎上，提出了加強中國電力工業節能降耗工作的一系列建議與措施，包括改變能源利用結構、創新能源利用技術、調整政策導向等。 -
Philipson bm, bokey el, moore jw, et al. cost of open versus laparoscopically assisted right hemicolectomy for cancer [ j ]. world j surg, 1997, 21 ( 2 ) : 214 - 217
謝岳林，陳貴.腹腔鏡與開腹膽囊切除術醫療效率和費用的比較分析[ j ] .中國微創外科雜志， 2004 ， 4 （ 1 ） : 5051 -
Under forward bias, the el spectra are found to have a luminescence band peaked at 510 nm of si - sic > 2 films and al - si - sic > 2 films, which originates mainly from the luminescence centers of some defects in the siox
對薄膜進行了乩譜的測量。發現了si - sio _ 2薄膜和al - si - sio _ 2薄膜均存在很強的峰位在510nm的電致發光（ el ）譜峰。 -
The results show that with the doping of some metal ( such as al ), the metal elements will exist by the form of atom clusters by adjusting the sputtering parameters. it should sharply increase the intensity of el and not change the luminescence centers
結果表明在硅基薄膜中摻入適量的金屬（例如：鋁） ，並使其以團簇的形式均勻彌散在薄膜中，有可能既不改變薄膜的發光中心，又可大大提高其發光效率。 -
With the increase of the amount of al, the intensity of the pl peak at 510nm increases. with the aid of ple we can suggest that pl peak at 370nm and 410nm are related to the oxygen vacancies, and 510nm peak originate from a complex co - function of al, si, and o. el devices have been fabricated on three types of silicon based oxide films ( ge - sio2 films, si - sio2 films, and al - sio2 films )
用不同的方法制備的51一5102薄膜、 ge一510 :薄膜和al一51一5102薄膜，在較低的電壓萬均觀察到了室溫可見電致發光現象，峰位都在510nm左右，其峰位不因薄膜樣品內所含顆粒的種類、薄膜的制備方法、偏壓及后處理的影響，表明電致發光主要來源於電子和空穴在510 、基質中的發光中心的輻射復合發光。
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