electron beam exposure 中文意思是什麼
electron beam exposure
解釋
電子束曝光-
Abstract : a new method for determining proximity parameters, and in electron - beam lithography is introduced on the assumption that the point exposure spread function is composed of two gaussians. a single line is used as test pattern to determine proximity effect parameters and the normalization approach is adopted in experimental data transaction in order to eliminate the need of measuring exposure clearing dose of the resist. furthermore, the parameters acquired by this method are successfully used for proximity effect correction in electron - beam lithography on the same experimental conditions
文摘:在電子散射能量沉積為雙高斯分佈的前提下,提出了一種提取電子束光刻中電子散射參數,和的新方法.該方法使用單線條作為測試圖形.為了避免測定光刻膠的顯影閾值,在實驗數據處理中使用歸一化方法.此外,用此方法提取的電子散射參數被成功地用於相同實驗條件下的電子束臨近效應校正 -
General specification of electron beam exposure system
電子束曝光機通用技術條件 -
Electron beam exposure apparatus
電子束曝光機 -
Variable shaped electron beam exposure system
可變電子束曝光裝置 -
Electron - beam photo - resist exposure
光致抗蝕劑的電子束曝光
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